Semiconductor device
A semiconductor device includes a semiconductor substrate, a source or drain layer provided in the semiconductor substrate, a gate insulation layer provided on a surface of the semiconductor substrate, and a gate electrode that is provided on the gate insulation layer. The semiconductor device further includes a first contact that is provided on the source or drain layer, the first contact including a stacked body in which a plurality of first layers and one or more second layers are alternately stacked, and a second contact that faces at least one of a side surface and an upper surface of the first contact disposed on the source or drain layer.
1. A semiconductor device comprising:
a semiconductor substrate;
a first source or drain layer and a second source or drain layer that are provided in the semiconductor substrate;
a gate insulation layer provided on a portion of a surface of the semiconductor substrate located between the first and second source or drain layers;
a gate electrode that is provided on the gate insulation layer;
a first contact that is provided on the first source or drain layer and a first contact that is provided on the second source or drain layer, each of the first contacts including a stacked body in which a plurality of first layers and one or more second layers are alternately stacked; and
a second contact that faces at least one of a side surface and an upper surface of the first contact disposed on the first source or drain layer, or faces a side surface and an upper surface of the first contact disposed on the second source or drain layer,
wherein a dimension of the one or more second layers in a direction parallel to the surface of the semiconductor substrate is smaller than a dimension of the first layers in the direction parallel to the surface of the semiconductor substrate.
2. The semiconductor device according claim 1 , wherein the dimension of the first layers is larger than the dimension of the one or more second layers by a factor in a range of 1.1 to 3.
3. The semiconductor device according to claim 1 ,
wherein a portion of the second contact is provided between two of the first layers and adjacent to one of the one or more second layers.
4. The semiconductor device according to claim 1 ,
wherein one or more recesses are defined by a side surface of the first contact at a position adjacent to one of the one or more second layers.
5. The semiconductor device according to claim 1 ,
wherein a dimension of the one or more second layers in a direction parallel to the surface of the semiconductor substrate is greater than a dimension of the first layers in a direction parallel to the surface of the semiconductor substrate.
6. The semiconductor device according to claim 5 , wherein the dimension of the one or more second layers is larger than the dimension of the first layers by a factor in a range of 1.1 to 3.
7. The semiconductor device according to claim 1 , wherein a material included in the first layer is different from a material included in the second layer.
8. The semiconductor device according to claim 1 ,
wherein the first layers include a first semiconductor layer,
the one or more second layers include a second semiconductor layer different from the first semiconductor layer, and
the second contact includes at least one of a metal and a conductive compound.
9. A semiconductor device comprising:
a semiconductor substrate comprising a source or drain layer adjacent to a surface of the semiconductor substrate;
a first contact provided on the first source or drain layer comprising a plurality of first layers and one or more second layers, the first layers and the one or more second layers being alternately stacked, and a side surface of the first contact defining one or more recesses; and
a second contact disposed around the first contact and in the one or more recesses,
wherein a dimension of the one or more second layers in a direction parallel to the surface of the semiconductor substrate is smaller than a dimension of the first layers in the direction parallel to the surface of the semiconductor substrate.
10. The semiconductor device according to claim 9 , wherein the dimension of the first layers is larger than the dimension of the one or more second layers by a factor in a range of 1.1 to 3.
11. The semiconductor device according to claim 9 , wherein the first layers each comprise at least one of silicon (Si), germanium (Ge), and silicon germanium (SiGe).
12. The semiconductor device according to claim 9 , wherein the one or more second layers each comprise at least one of silicon (Si), germanium (Ge), and silicon germanium (SiGe).
13. The semiconductor device according to claim 9 , wherein the second contact comprises at least one of titanium (Ti), tungsten (W), and titanium nitride (TiN).