Semiconductor memory device having vertical semiconductor films with narrowing widths and gate insulating films with different thickness
A semiconductor memory device according to an embodiment includes: a substrate; a plurality of first gate electrodes; a first semiconductor film facing the plurality of first gate electrodes; and a first gate insulating film provided between the plurality of first gate electrodes and the first semiconductor film. Moreover, this semiconductor memory device includes: a plurality of second gate electrodes; a second semiconductor film facing the plurality of second gate electrodes; and a second gate insulating film provided between the plurality of second gate electrodes and the second semiconductor film. Moreover, this semiconductor memory device includes: a third gate electrode that is provided between the plurality of first gate electrodes and the plurality of second gate electrodes, and extends in a second direction; and a third gate insulating film provided between the third gate electrode and the first semiconductor film. Moreover, a thickness in a first direction of the third gate insulating film is larger than a width in the second direction of the first gate insulating film and the second gate insulating film.
1. A semiconductor memory device, comprising:
a substrate;
a plurality of first gate electrodes that are arranged in a first direction intersecting a surface of the substrate and extend in a second direction intersecting the first direction;
a first semiconductor film that extends in the first direction and faces the plurality of first gate electrodes, a width in the second direction of one end on a substrate side of the first semiconductor film being smaller than a width in the second direction of an other end of the first semiconductor film;
a first gate insulating film that extends in the first direction and is provided between the plurality of first gate electrodes and the first semiconductor film;
a plurality of second gate electrodes that are arranged in the first direction, extend in the second direction, and are further from the substrate than the plurality of first gate electrodes are;
a second semiconductor film that extends in the first direction and faces the plurality of second gate electrodes, a width in the second direction of one end on the substrate side of the second semiconductor film being smaller than the width in the second direction of the other end of the first semiconductor film, a width in the second direction of an other end of the second semiconductor film being larger than the width in the second direction of the one end of the second semiconductor film, and the one end of the second semiconductor film being connected to the other end of the first semiconductor film;
a second gate insulating film that extends in the first direction and is provided between the plurality of second gate electrodes and the second semiconductor film;
a third gate electrode that is provided between the plurality of first gate electrodes and the plurality of second gate electrodes, extends in the second direction, and faces the other end of the first semiconductor film at a surface on the substrate side; and
a third gate insulating film that is provided between the third gate electrode and the other end of the first semiconductor film, and is connected to the first gate insulating film and the second gate insulating film,
the third gate electrode facing the second semiconductor film via the second gate insulating film, and facing the other end of the first semiconductor film via the third gate insulating film, and
a thickness in the first direction of the third gate insulating film being larger than a thickness in the second direction of the first gate insulating film and the second gate insulating film.
2. The semiconductor memory device according to claim 1 , wherein
the first gate insulating film comprises:
a first insulating film provided between the first gate electrode and the first semiconductor film;
a first charge accumulating film provided between the first gate electrode and the first insulating film; and
a second insulating film provided between the first gate electrode and the first charge accumulating film,
the second gate insulating film comprises:
a third insulating film provided between the second gate electrode and the second semiconductor film;
a second charge accumulating film provided between the second gate electrode and the third insulating film; and
a fourth insulating film provided between the second gate electrode and the second charge accumulating film, and
the third gate insulating film comprises:
a fifth insulating film provided between the third gate electrode and the first semiconductor film;
a third charge accumulating film provided between the third gate electrode and the fifth insulating film; and
a sixth insulating film provided between the third gate electrode and the third charge accumulating film.
3. The semiconductor memory device according to claim 2 , wherein
the fifth insulating film is connected to the first insulating film and the third insulating film,
the third charge accumulating film is connected to the first charge accumulating film and the second charge accumulating film, and
the sixth insulating film is connected to the second insulating film and the fourth insulating film.
4. The semiconductor memory device according to claim 2 , wherein
an end section on the substrate side in the first direction of the third insulating film is closer to the substrate than an end section on an opposite side to the substrate in the first direction of the first insulating film is,
an end section on the substrate side in the first direction of the second charge accumulating film is closer to the substrate than an end section on an opposite side to the substrate in the first direction of the first charge accumulating film is, and
an end section on the substrate side in the first direction of the fourth insulating film is closer to the substrate than an end section on an opposite side to the substrate in the first direction of the second insulating film is.
5. The semiconductor memory device according to claim 2 , wherein
an end section on the substrate side in the first direction of the third insulating film is further from the substrate than an end section on an opposite side to the substrate in the first direction of the first insulating film is,
an end section on the substrate side in the first direction of the second charge accumulating film is further from the substrate than an end section on an opposite side to the substrate in the first direction of the first charge accumulating film is, and
an end section on the substrate side in the first direction of the fourth insulating film is further from the substrate than an end section on an opposite side to the substrate in the first direction of the second insulating film is.
6. The semiconductor memory device according to claim 2 , wherein
a thickness in the first direction of the sixth insulating film
is larger than a thickness in the second direction of the second insulating film, and
is larger than a thickness in the second direction of the fourth insulating film.
7. The semiconductor memory device according to claim 2 , wherein
in the case that
a difference between a thickness in the first direction of the sixth insulating film and a thickness in the second direction of the second insulating film is assumed to be a first difference,
a difference between the thickness in the first direction of the sixth insulating film and a thickness in the second direction of the fourth insulating film is assumed to be a second difference,
a difference between a thickness in the first direction of the fifth insulating film and a thickness in the second direction of the first insulating film is assumed to be a third difference, and
a difference between the thickness in the first direction of the fifth insulating film and a thickness in the second direction of the third insulating film is assumed to be a fourth difference,
the first difference and the second difference are larger than the third difference and the fourth difference.
8. The semiconductor memory device according to claim 2 , further comprising:
a first interlayer insulating film provided between the plurality of first gate electrodes; and
a second interlayer insulating film provided between the plurality of second gate electrodes,
wherein the second insulating film comprises:
a first portion provided between the first gate electrode and the first semiconductor film; and
a second portion provided between the first interlayer insulating film and the first semiconductor film,
the fourth insulating film comprises:
a third portion provided between the second gate electrode and the second semiconductor film; and
a fourth portion provided between the second interlayer insulating film and the second semiconductor film,
a thickness in the second direction of the first portion is larger than a thickness in the second direction of the second portion, and
a thickness in the second direction of the third portion is larger than a thickness in the second direction of the fourth portion.
9. The semiconductor memory device according to claim 8 , wherein
in the case that
a difference between the thickness in the second direction of the first portion and the thickness in the second direction of the second portion is assumed to be a first difference,
a difference between the thickness in the second direction of the third portion and the thickness in the second direction of the fourth portion is assumed to be a second difference,
a difference between a thickness in the first direction of the fifth insulating film and a thickness in the second direction of the first insulating film is assumed to be a third difference, and
a difference between the thickness in the first direction of the fifth insulating film and a thickness in the second direction of the third insulating film is assumed to be a fourth difference,
the first difference and the second difference are larger than the third difference and the fourth difference.