Read head including semiconductor spacer and long spin diffusion length nonmagnetic conductive material and method of making thereof
View Patent ↗A read head includes a first ferromagnetic layer, a second ferromagnetic layer, a first diffusion-assist nonmagnetic metallic layer located between the first ferromagnetic layer and the second ferromagnetic layer, a second diffusion-assist nonmagnetic metallic layer located between the first ferromagnetic layer and the second ferromagnetic layer, and a semiconductor spacer layer located between the first diffusion-assist nonmagnetic metallic layer and the second diffusion-assist nonmagnetic metallic layer.
1. A read head, comprising:
a first ferromagnetic layer;
a second ferromagnetic layer;
a first diffusion-assist nonmagnetic metallic layer located between the first ferromagnetic layer and the second ferromagnetic layer;
a second diffusion-assist nonmagnetic metallic layer located between the first ferromagnetic layer and the second ferromagnetic layer; and
a semiconductor spacer layer located between the first diffusion-assist nonmagnetic metallic layer and the second diffusion-assist nonmagnetic metallic layer;
wherein each of the first diffusion-assist nonmagnetic metallic layer and the second diffusion-assist nonmagnetic metallic layer comprises a metal selected from Ag, Au, Cu, or Ti; and
wherein the semiconductor spacer layer comprises a material selected from copper-indium-gallium-selenide, copper-indium-selenide or copper-gallium-selenide.
2. The read head of claim 1 , wherein the semiconductor spacer layer directly contacts both the first diffusion-assist nonmagnetic metallic layer and the second diffusion-assist nonmagnetic metallic layer.
3. The read head of claim 1 , wherein:
the first ferromagnetic layer directly contacts the first diffusion-assist nonmagnetic metallic layer; and
the second ferromagnetic layer directly contacts the second diffusion-assist nonmagnetic metallic layer.
4. The read head of claim 1 , wherein at least one of the first ferromagnetic layer and the second ferromagnetic layer comprises a ferromagnetic Heusler alloy layer.
5. The read head of claim 4 , wherein the first ferromagnetic layer and the second ferromagnetic layer comprises a Co 2 FeAl alloy or a Co 2 MnGe alloy.
6. The read head of claim 1 , wherein each of the first diffusion-assist nonmagnetic metallic layer and the second diffusion-assist nonmagnetic metallic layer has a thickness in a range from 1 monolayer of the elemental metal to 3 monolayers of the metal.
7. The read head of claim 6 , wherein the semiconductor spacer layer has a thickness in a range from 1 nm to 3 nm.
8. The read head of claim 7 , wherein each of the first ferromagnetic layer and the second ferromagnetic layer has a thickness in a range from 0.8 nm to 3 nm.
9. The read head of claim 1 , wherein:
the first ferromagnetic layer is a first free layer having a first magnetization having at least two preferred magnetization directions; and
the second ferromagnetic layer is a second free layer having a second magnetization having at least two preferred magnetization directions.
10. The head of claim 1 , further comprising a synthetic antiferromagnetic stack, wherein one of the first and the second ferromagnetic layers comprises a free layer and the other one of the first and the second ferromagnetic layers comprises a pinned reference layer.
11. The head of claim 1 , further comprising a first magnetic shield and a second magnetic shield, wherein a sensor layer stack comprising the first ferromagnetic layer, the second ferromagnetic layer, the first diffusion-assist nonmagnetic metallic layer, the second diffusion-assist nonmagnetic metallic layer and the semiconductor spacer layer is located between the first magnetic shield and the second magnetic shield.
12. A hard disk drive, comprising:
a magnetic head containing the read head of claim 1 ;
a slider supporting the magnetic head;
an actuator arm supporting the slider; and
a motor configured to control the actuator arm.
13. A read head, comprising:
a first ferromagnetic layer;
a second ferromagnetic layer;
a first diffusion-assist nonmagnetic metallic layer located between the first ferromagnetic layer and the second ferromagnetic layer;
a second diffusion-assist nonmagnetic metallic layer located between the first ferromagnetic layer and the second ferromagnetic layer; and
a semiconductor spacer layer located between the first diffusion-assist nonmagnetic metallic layer and the second diffusion-assist nonmagnetic metallic layer;
wherein at least one of the first ferromagnetic layer and the second ferromagnetic layer comprises a layer stack comprising a negative magnetostriction material layer, an amorphous nonmagnetic material layer, an amorphous magnetic material layer and a Heusler alloy magnetic material layer.
14. The read head of claim 13 , wherein:
the negative magnetostriction material layer comprises a NiFe5% alloy;
the amorphous nonmagnetic material layer comprises amorphous tantalum which directly contacts the negative magnetostriction material layer;
the amorphous magnetic material layer comprises an amorphous CoFeB alloy which directly contacts the amorphous nonmagnetic material layer; and
the Heusler alloy magnetic material layer comprises a Co 2 FeAl alloy or a Co 2 MnGe alloy which directly contacts the amorphous magnetic material layer.