Perovskite-containing devices and methods of making the same
The present disclosure relates to a method that includes positioning a stack that includes at least one of the following layers between a first surface and a second surface: a first perovskite layer and/or a second perovskite layer; and treating the stack for a period of time by at least one of heating the stack or pressurizing the stack, where a device that includes the first surface and the second surface provides the heating and the pressurizing of the stack.
1. A method comprising:
providing a device comprising a first surface and a second surface;
depositing a first cation (A), a second cation (B), and an anion (X) onto at least one of the first surface or the second surface, resulting in at least one layer comprising at least one of A, B, or X; and
combining the first surface with the second surface such that the at least one layer is positioned between the first surface and the second surface, wherein:
during at least a portion of the combining, applying at least one of heat or pressure to at least one of the first surface or the second surface resulting in at least one of the heating of the layer or the pressurizing of the layer,
during the combining, substantially all of A, B, and X remain between the first surface and the second surface and the combining forms a temporary gas-tight seal between the first surface and the second surface and around A, B and X, the combining results in the transforming of the layer to a perovskite comprising ABX 3 ; and
the device is configured for the applying of the heat or the pressure.
2. The method of claim 1 , wherein, during the combining, the heating of the layer is to a temperature between 0° C. and 500° C.
3. The method of claim 1 , wherein, during the combining, the pressurizing of the layer is to a pressure between one atmosphere and 100 atmospheres.
4. The method of claim 1 , wherein the combining is performed for a period of time between five seconds and 24 hours.
5. The method of claim 1 , wherein the perovskite comprises at least one of MAPbI 3 , MAPbBr 3 , CsPbI 3 , CsPbBr 3 , Cs 0.05 (MA 0.17 FA 0.83 ) 0.95 Pb(I 0.83 Br 0.17 ) 3 , or MAPb(I x Br 1-x ) 3 , where 0≤x≤1.
6. The method of claim 1 , wherein the device is a press.
7. The method of claim 1 , wherein during the combining A, B, and X are encapsulated from an external environment.
8. The method of claim 1 , wherein the first surface, the second surface, or both the first surface and second surface further comprise a release layer.
9. A method comprising:
providing a device comprising a first surface and a second surface;
a first depositing of at least one of a first cation (A), a second cation (B), or a first anion (X) onto the first surface, resulting in the forming of a first layer comprising at least one of A, B, or X;
a second depositing of at least one of a third cation (A′), a fourth cation (B′), and a second anion (X′) onto the second surface, resulting in the forming of a second layer comprising at least one of A′, B′, or X′; and
combining the first surface with the second surface such that the first layer and the second layer are in physical contact with each other and the first layer and the second layer are positioned between the first surface and the second surface, wherein:
the device is configured to apply at least one of heat or pressure;
the combining forms a temporary gas-tight seal between the first surface and the second surface and around A, B, X, A′, B′ and X′;
during at least a portion of the combining, applying the heat or pressure to at least one of the first surface or the second surface resulting in at least one of heating of the first layer and second layer or pressurizing of the first layer and the second layer,
during the combining, substantially all of A, B, and X remain between the first surface and the second surface,
during the combining, substantially all of A′, B′, and X′ remain between the first surface and the second surface,
the combining results in the transforming of the first layer and the second layer to a layer of a perovskite comprising A 1-x A′ x B 1-y B′ y (X 1-z X′ z ) 3 , and 0≤x≤1, 0≤y≤1, and 0≤z≤1.
10. The method of claim 9 , wherein the perovskite layer has a concentration gradient across the thickness of layer of at least one of A, B, X, A′, B′, or X′.
11. The method of claim 9 , wherein the device is a press.
12. The method of claim 9 , wherein during the combining A, B, X, A′, B′ and X′ are encapsulated from an external environment.
13. The method of claim 9 , wherein the first surface, the second surface, or both the first surface and second surface further comprise a release layer.