Magnetic storage device
View Patent ↗According to one embodiment, a magnetic storage device includes a magnetoresistive effect element. The magnetoresistive effect element including: a first ferromagnetic layer; a second ferromagnetic layer; a first non-magnetic layer between the first ferromagnetic layer and the second ferromagnetic layer; a second non-magnetic layer at an opposite side of the first non-magnetic layer relative to the first ferromagnetic layer; and a third non-magnetic layer at an opposite side of the first ferromagnetic layer relative to the second non-magnetic layer. The second non-magnetic layer including rare-earth oxide, and the third non-magnetic layer including ruthenium (Ru) or molybdenum (Mo).
1. A magnetic storage device comprising:
a magnetoresistive effect element (MTJ),
the magnetoresistive effect element including:
a first ferromagnetic layer;
a second ferromagnetic layer;
a first non-magnetic layer between the first ferromagnetic layer and the second ferromagnetic layer;
a second non-magnetic layer provided at a side of the first ferromagnetic layer opposite to a side of the first ferromagnetic layer at which the first non-magnetic layer is provided; and
a third non-magnetic layer provided at a side of the second non-magnetic layer opposite to a side of the second non-magnetic layer at which the first ferromagnetic layer is provided,
wherein:
the second non-magnetic layer includes a rare-earth oxide, and
the third non-magnetic layer includes one of ruthenium (Ru) and molybdenum (Mo).
2. The device of claim 1 , wherein:
the third non-magnetic layer further includes at least one element selected from boron (B), silicon (Si), and carbon (C).
3. The device of claim 1 , wherein:
the third non-magnetic layer has an amorphous structure.
4. The device of claim 1 , wherein:
the third non-magnetic layer is in contact with the second non-magnetic layer.
5. The device of claim 1 , wherein:
a film thickness of the third non-magnetic layer is within a range from 0.5 nanometers to 3 nanometers.
6. The device of claim 1 , wherein:
the second non-magnetic layer includes at least one oxide of rare-earth element selected from scandium (Sc), yttrium (Y), lanthanum (La), neodymium (Nd), samarium (Sm), europium (Eu), gadolinium (Gd), terbium (Tb), and dysprosium (Dy).
7. The device of claim 6 , wherein:
the second non-magnetic layer further includes boron (B).
8. The device of claim 7 , wherein:
the second non-magnetic layer further includes iron (Fe).
9. The device of claim 1 , wherein:
the second non-magnetic layer is in contact with the first ferromagnetic layer.
10. The device of claim 1 , wherein:
a film thickness of the second non-magnetic layer is within a range from 0.5 nanometers to 2 nanometers.
11. The device of claim 10 , wherein:
the film thickness of the second non-magnetic layer is within a range from 0.7 nanometers to 1.3 nanometers.
12. The device of claim 1 , wherein:
the first ferromagnetic layer includes at least one element selected from iron (Fe), cobalt (Co), and nickel (Ni).
13. The device of claim 1 , wherein:
the second ferromagnetic layer includes at least one element selected from iron (Fe), cobalt (Co), and nickel (Ni).
14. The device of claim 1 , wherein:
a magnetization of the first ferromagnetic layer is smaller than a magnetization of the second ferromagnetic layer.
15. The device of claim 1 , wherein:
a film thickness of the first ferromagnetic layer is within a range from 1 nanometer to 3 nanometers.
16. The device of claim 15 , wherein:
the film thickness of the first ferromagnetic layer is within a range from 1 nanometer to 2 nanometers.
17. The device of claim 1 , further comprising:
a switching element coupled to the magnetoresistive effect element.
18. The device of claim 1 , wherein:
the first ferromagnetic layer, the first non-magnetic layer, and the second ferromagnetic layer form a magnetic tunnel junction.