Organic dielectric layer and organic electronic device

1. An organic electronic (OE) device comprising a dielectric layer, said dielectric layer comprising polycycloolefinic polymer comprising one or more pendent groups having an absorption maximum in the range from 230 to 290 nm; wherein the polycycloolefinic polymer is a norbornene-type polymer having one or more first, distinct types of repeating units, which is selected from the group consisting of:

2. The OE device according to claim 1 , wherein the polycycloolefinic polymer having the repeating units is:

3. The OE device according to claim 1 , wherein the polycycloolefinic polymer having the repeating units is:

4. The OE device according to claim 1 , wherein the polycycloolefinic polymer having the repeating units is:

5. The OE device according to claim 1 , wherein the polycycloolefinic polymer additionally comprises one or more second, distinct types of repeating units of Formula I

wherein one or more of R 1-4 are different from H and denote an alkyl or fluorinated alkyl group having from 1 to 20 C atoms.

6. The OE device according to claim 5 , wherein the ratio of the first and second type of repeating units is from 95:5 to 5:95.

7. A dielectric layer in an OE device, said dielectric layer comprising a polycycloolefinic polymer as defined in claim 1 .

8. The OE device according to claim 1 , which is an Organic Thin Film Transistor (OTFT), Organic Light Emitting Diode (OLED) or Organic Photovoltaic (OPV) device or Organic Photodetector (OPD).

9. The OE device according to claim 8 , which is a top gate OTFT or bottom gate OTFT.

10. The top gate OTFT according to claim 9 , which comprises a substrate ( 1 ), source and drain electrodes ( 2 a , 2 b ), an organic semiconductor (OSC) layer ( 3 ), a dielectric layer ( 4 ) comprising the polycycloolefinic polymer and serving as gate insulator, and gate electrode ( 5 ).

11. A process for preparing an OTFT according to claim 10 , which comprises:

A) forming source and drain electrodes ( 2 a , 2 b ) on a substrate ( 1 ),

B) forming an OSC layer ( 3 ) by deposition of an OSC material on the source and drain electrodes ( 2 a , 2 b ),

C) forming a dielectric layer ( 4 ) by deposition of the polycycloolefinic polymer on the OSC layer ( 3 ),

D) forming a gate electrode ( 5 ) on the dielectric layer ( 4 ).

12. The bottom gate OTFT according to claim 9 , which comprises a substrate ( 1 ), a gate electrode ( 5 ), a dielectric layer ( 4 ) comprising the polycycloolefinic polymer and serving as gate insulator, source and drain electrodes ( 2 a , 2 b ), an OSC layer ( 3 ), and optionally a passivation layer ( 6 ).

13. A process for preparing an OTFT according to claim 12 , which comprises:

A) forming a gate electrode ( 5 ) on a substrate ( 1 ),

B) forming a dielectric layer ( 4 ) by deposition of the polycycloolefinic polymer on the substrate ( 1 ) and the gate electrode ( 5 ),

C) forming source and drain electrodes ( 2 a , 2 b ) on the dielectric layer ( 4 ),

D) forming an OSC layer ( 3 ) by deposition of an OSC material on the source and drain electrodes ( 2 a , 2 b ) and the dielectric layer ( 4 ),

E) optionally forming a passivation layer ( 6 ) on the OSC layer ( 3 ).

14. A process according to claim 11 , wherein the OSC material of the OSC layer ( 3 ) and the polycycloolefinic polymer of the dielectric layer ( 4 ) are deposited from an organic solution.

15. A product or assembly comprising an OE device according to claim 1 , which is an Integrated Circuit (IC), a Radio Frequency Identification (RFID) tag, a security marking or security device containing an RFID tag, a Flat Panel Display (FPD), a backplane of an FPD, a backlight of an FPD, an electrophotographic device, an electrophotographic recording device, an organic memory device, a pressure sensor, an optical sensor, a chemical sensor, a biosensor or a biochip.

16. The process according to claim 13 , wherein the OSC material of the OSC layer ( 3 ) and the polycycloolefinic polymer of the dielectric layer ( 4 ) are deposited from an organic solution.