LIGHT EMITTING DIODE PACKAGE
In one embodiment, the LED package comprises: (a) a submount comprising a substrate, at least one electrical interface, and a non-conductive reflective material disposed over substantially all of submount except for the at least one electrical interface; and (b) an LED chip having sides and at least one contact, the LED chip being flip-chip mounted to the submount such that the at least one contact is electrically connected to the at least one electrical interface, the LED chip covering a substantial portion of the at least one electrical interface, substantially all of the chip extending above the reflective material.
1 . An LED package comprising:
a submount comprising a substrate, at least one electrical interface, and a non-conductive reflective material disposed over substantially all of the substrate except for said at least one electrical interface; and
at least one LED chip having at least one contact, said LED chip being flip-chip mounted to said submount such that said at least one contact is electrically connected to said at least one electrical interface, said LED chip covering a substantial portion of said at least one electrical interface, substantially all of said chip extending above said reflective material.
2 . The LED package of claim 1 , wherein said reflector material has a top surface
3 . The LED package of claim 2 , wherein at least 90% of the area of lateral sides of said LED chip is above said top surface.
4 . The LED package of claim 2 , wherein all of said LED chip is above said top surface.
5 . The LED package of claim 2 , wherein said top surface is substantially coplanar with the top of said pad.
6 . The LED package of claim 1 , wherein said reflective material comprises a white reflecting material or a dichroic reflector.
7 . The LED package of claim 2 , wherein said the submount is configured such that the top surface has a reflectivity of at least 90% at all wavelengths in the range 400-700 nm.
8 . The LED package of claim 1 , further comprising a die attach stack between said contact and said electrical interface.
9 . The LED package of claim 8 , wherein said die attached stack is a metallic stack comprising a Sn layer having a thickness of at least about 2, 5, 10, 20, or 50 um, or in the range 2-50 um or 5-20 um.
10 . The LED package of claim 1 , wherein said substrate is substantially made of a ceramic.
11 . The LED package of claim 1 , wherein said substantially all is at least 90%.
12 . The LED package of claim 1 , wherein said substantial portion is at least 90%.
13 . The LED package of claim 1 , wherein said LED chip is configured to emit at a peak wavelength shorter than 430 nm.
14 . The LED package of claim 13 , further comprising an encapsulant disposed over said LED chip and said submount, said encapsulant having an absorption less than 0.1 cm−1 at said peak wavelength.
15 . The LED package of claim 1 , wherein said LED chip is volumetric.
16 . The LED package of claim 1 , further comprising a reflective cup extending upward from said reflective material on at least one side of the package.
17 . The LED package of claim 16 , wherein the reflective cup is formed on all lateral sides of the package and light is emitted from a top side of the package.
18 . The LED package of claim 16 , further comprising a reflective top side such that light is emitted from at least a lateral side of the package.
19 . The LED package of claim 1 , wherein each of the at least one LED chip comprises two contacts in a flip-chip configuration, and wherein each contact is electrically connected to an electrical interface of the submount.
20 . The LED package of claim 1 , wherein the LED emits a pump light and least 20% of the pump light is emitted from the lateral sides of the LED.
21 - 80 . (canceled)