IP Library Granted Patent US 11,081,047
Granted Patent B2
US 11,081,047 · App. 16/321,968 · Granted Aug 3, 2021

Pixel structure, driving method therefor and preparation method therefor, and display apparatus

Inventors: Jingbo Xu (Beijing, CN); Hu Meng (Beijing, CN)
Assignee: BOE TECHNOLOGY GROUP CO., LTD.
G09G3/3225G02F1/1368G02F1/136286G09G3/20G09G3/3614G09G3/3648H01L27/12H01L27/3248H01L27/3276G09G2300/0426
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Quick Facts
Patent No.
US 11,081,047
App. No.
16/321,968
Granted
Aug 3, 2021
Kind
B2
Abstract

Disclosed are a pixel structure, a method for driving a pixel structure, a method for preparing a pixel structure, and a display apparatus. The pixel structure includes a plurality of sub-pixel groups arranged in an array; each of the sub-pixel groups comprises a first sub-pixel electrode, a second sub-pixel electrode a first-type carbon nanotube switch tube and a second-type carbon nanotube switch tube; the first sub-pixel electrode is connected to the first-type carbon nanotube switch tube; the second sub-pixel electrode is connected to the second-type carbon nanotube switch tube; and the first-type carbon nanotube switch tube and the second-type carbon nanotube switch tube in each of the sub-pixel groups are connected to the same gate line and the same data line.

Claims (45)

1. A pixel structure comprising a plurality of sub-pixel groups arranged in an array,

wherein each sub-pixel group of the plurality of sub-pixel groups comprises a first sub-pixel electrode, a second sub-pixel electrode, a first-type carbon nanotube switch tube, and a second-type carbon nanotube switch tube,

the first sub-pixel electrode is connected to the first-type carbon nanotube switch tube, the second sub-pixel electrode is connected to the second-type carbon nanotube switch tube, and the first-type carbon nanotube switch tube and the second-type carbon nanotube switch tube in each sub-pixel group are connected to a same gate line and a same data line;

an active layer of the first-type carbon nanotube switch tube and an active layer of the second-type carbon nanotube switch tube are formed simultaneously by a same process; and

a material for forming source-drain electrodes of the first-type carbon nanotube switch tube and a material for forming source-drain electrodes of the second-type carbon nanotube switch tube are different;

wherein the first-type carbon nanotube switch tube is an N-type carbon nanotube switch tube, and the second-type carbon nanotube switch tube is a P-type carbon nanotube switch tube; or

the first-type carbon nanotube switch tube is a P-type carbon nanotube switch tube, and the second-type carbon nanotube switch tube is an N-type carbon nanotube switch tube;

a material of a source electrode and a drain electrode of the N-type carbon nanotube switch tube is undoped copper or aluminum, and a material of a source electrode and a drain electrode of the P-type carbon nanotube switch tube is undoped lead.

2. The pixel structure according to claim 1 , wherein the first sub-pixel electrode and the second sub-pixel electrode in each sub-pixel group are adjacent.

3. The pixel structure according to claim 2 , wherein the first sub-pixel electrode and the second sub-pixel in each sub-pixel group are located in a same row.

4. The pixel structure according to claim 2 , wherein in a same column of sub-pixel electrodes, the first sub-pixel electrode and the second sub-pixel electrode are alternately arranged.

5. The pixel structure according to claim 4 , wherein in an odd row of the plurality of sub-pixel groups, the first sub-pixel electrode is located in an odd column, and the second sub-pixel electrode is located in an even column; and

in an even row of the plurality of sub-pixel groups, the second sub-pixel electrode is located in an odd column, and the first sub-pixel electrode is located in an even column.

6. The pixel structure according to claim 4 , wherein in an odd row of the plurality of sub-pixel groups, the second sub-pixel electrode is located in an odd column, and the first sub-pixel electrode is located in an even column; and

in an even row of the plurality of sub-pixel groups, the first sub-pixel electrode is located in an odd column, and the second sub-pixel electrode is located in an even column.

7. The pixel structure according to claim 2 , wherein in each sub-pixel group, the first-type carbon nanotube switch tube connected to the first sub-pixel electrode and the second-type carbon nanotube switch tube connected to the second sub-pixel electrode are respectively located at two sides of a data line that is connected to both the first-type carbon nanotube switch tube and the second-type carbon nanotube switch tube.

8. The pixel structure according to claim 7 , wherein in each sub-pixel group, the second-type carbon nanotube switch tube and the first-type carbon nanotube switch tube are mirror-symmetrical with the data line as a symmetry axis.

9. The pixel structure according to claim 2 , wherein first-type carbon nanotube switch tubes and second-type carbon nanotube switch tubes in sub-pixel groups located in a same row are connected to a same corresponding gate line, and first-type carbon nanotube switch tubes and second-type carbon nanotube switch tubes in sub-pixel groups located in a same column are connected to a same corresponding date line.

10. A display device, comprising the pixel structure according to claim 1 .

11. The pixel structure according to claim 8 , wherein in each sub-pixel group, the first sub-pixel electrode and the second sub-pixel electrode are mirror-symmetrical with the corresponding data line as a symmetry axis.

12. The pixel structure according to claim 1 , wherein a channel material the first-type carbon nanotube switch tube and a channel material of the second sub-pixel electrode are same.

13. A method of manufacturing a pixel structure, comprising:

forming a plurality of sub-pixel groups arranged in an array,

wherein each sub-pixel group of the plurality of sub-pixel groups comprises a first sub-pixel electrode, a second sub-pixel electrode, a first-type carbon nanotube switch tube, and a second-type carbon nanotube switch tube,

the first sub-pixel electrode is connected to the first-type carbon nanotube switch tube, the second sub-pixel electrode is connected to the second-type carbon nanotube switch tube, the first-type carbon nanotube switch tube and the second-type carbon nanotube switch tube in each sub-pixel group are connected to a same gate line and a same data line,

an active layer of the first-type carbon nanotube switch tube and an active layer of the second-type carbon nanotube switch tube are simultaneously formed by a same process; and

source-drain electrodes of the first-type carbon nanotube switch tube and source-drain electrodes of the second-type carbon nanotube switch tube are respectively formed of different materials;

wherein the first-type carbon nanotube switch tube is an N-type carbon nanotube switch tube, and the second-type carbon nanotube switch tube is a P-type carbon nanotube switch tube; or

the first-type carbon nanotube switch tube is a P-type carbon nanotube switch tube, and the second-type carbon nanotube switch tube is an N-type carbon nanotube switch tube;

a source electrode and a drain electrode of the N-type carbon nanotube switch tube is formed of undoped copper or aluminum, and a source electrode and a drain electrode of the P-type carbon nanotube switch tube is formed of undoped lead.

14. A method of driving a pixel structure, wherein the pixel structure comprises a plurality of sub-pixel groups arranged in an array, each sub-pixel group of the plurality of sub-pixel groups comprises a first sub-pixel electrode, a second sub-pixel electrode, a first-type carbon nanotube switch tube, and a second-type carbon nanotube switch tube, the first sub-pixel electrode is connected to the first-type carbon nanotube switch tube, the second sub-pixel electrode is connected to the second-type carbon nanotube switch tube, and the first-type carbon nanotube switch tube and the second-type carbon nanotube switch tube in each sub-pixel group are connected to a same gate line and a same data line, an active layer of the first-type carbon nanotube switch tube and an active layer of the second-type carbon nanotube switch tube are formed simultaneously by a same process; a material for forming source-drain electrodes of the first-type carbon nanotube switch tube and a material for forming source-drain electrodes of the second-type carbon nanotube switch tube are different,

wherein the first-type carbon nanotube switch tube is an N-type carbon nanotube switch tube, and the second-type carbon nanotube switch tube is a P-type carbon nanotube switch tube; or

the first-type carbon nanotube switch tube is a P-type carbon nanotube switch tube, and the second-type carbon nanotube switch tube is an N-type carbon nanotube switch tube;

a material of a source electrode and a drain electrode of the N-type carbon nanotube switch tube is undoped copper or aluminum, and a material of a source electrode and a drain electrode of the P-type carbon nanotube switch tube is undoped lead;

and driving of each sub-pixel group comprises a positive driving phase and a negative driving phase;

the driving method comprises:

in the positive driving phase, inputting a first scan voltage to the first-type carbon nanotube switch tube of each sub-pixel group through a gate line, so as to turn on the first-type carbon nanotube switch tube; inputting a first data voltage to the first-type carbon nanotube switch tube through a data line, the first-type carbon nanotube switch tube driving the first sub-pixel electrode to display;

in the negative driving phase, inputting a second scan voltage to the second-type carbon nanotube switch tube of each sub-pixel group through the gate line, so as to turn on the second-type carbon nanotube switch tube; inputting a second data voltage to the second-type carbon nanotube switch tube through the data line, the second-type carbon nanotube switch tube driving the second sub-pixel electrode to display,

wherein a polarity of the first data voltage and a polarity of the second data voltage are opposite.

15. The method of driving the pixel structure according to claim 14 , wherein in an (N)th frame, the polarity of the first data voltage is positive, and the polarity of the second data voltage is negative;

in an (N+1)th frame, the polarity of the first data voltage is negative, and the polarity of the second data voltage is positive, and N is a positive integer.

16. The method of driving the pixel structure according to claim 14 , wherein first sub-pixel electrodes in sub-pixel groups located in an odd row and first sub-pixel electrodes in sub-pixel group located in an even row are driven in the positive driving phase; and

second sub-pixel electrodes in the sub-pixel groups located in the odd row and second sub-pixel electrodes in the sub-pixel group located in the even row are driven in the negative driving phase.

17. The method of driving the pixel structure according to claim 14 , wherein second sub-pixel electrodes in sub-pixel groups located in an odd row and second sub-pixel electrodes in sub-pixel group located in an even row are driven in the positive driving phase; and

first sub-pixel electrodes in the sub-pixel groups located in the odd row and first sub-pixel electrodes in the sub-pixel group located in the even row are driven in the negative driving phase.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 27, 2022
From: BOE TECHNOLOGY GROUP CO., LTD.
To: BEIJING BOE TECHNOLOGY DEVELOPMENT CO., LTD.
Reel/Frame 060826/0252 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 30, 2019
From: XU, JINGBO; MENG, HU
To: BOE TECHNOLOGY GROUP CO., LTD.
Reel/Frame 048190/0858 →
Priority Claims (1)
CN 201710413271.3 · Jun 5, 2017 · national
Continuity (1)
Related Publication 20190180680A1 · Jun 13, 2019
Cited By (1)
US 12,211,438