Manufacturing method of nitride semiconductor ultraviolet light emitting element, and nitride semiconductor ultraviolet light emitting element
A manufacturing method of a nitride semiconductor ultraviolet light-emitting element having a peak emission wavelength of 285 nm or shorter comprises a first step of forming an n-type semiconductor layer composed of an n-type Al X Ga 1-X N-based semiconductor (1≥X≥0.5) on an upper surface of an underlying portion including a sapphire substrate, a second step of forming, above the n-type semiconductor layer, an active layer that includes a light-emitting layer composed of an Al Y Ga 1-Y N-based semiconductor (X>Y>0) and that is composed of an AlGaN-based semiconductor as a whole, and a third step of forming a p-type semiconductor layer composed of a p-type Al Z Ga 1-Z N-based semiconductor (1≥Z>Y) above the active layer. In the manufacturing method, a growth temperature at the second step is higher than 1200° C. and equal to or higher than a growth temperature at the first step.
1. A manufacturing method of a nitride semiconductor ultraviolet light-emitting element having a peak emission wavelength of 285 nm or shorter comprising:
a first step of forming an n-type semiconductor layer composed of an n-type Al X Ga 1-X N-based semiconductor (1≥X≥0.5) on an upper surface of an underlying portion including a sapphire substrate;
a second step of forming, above the n-type semiconductor layer, an active layer that includes a light-emitting layer composed of an Al Y Ga 1-Y N-based semiconductor (X>Y>0) and that is composed of an AlGaN-based semiconductor as a whole; and
a third step of forming a p-type semiconductor layer composed of a p-type Al Z Ga 1-Z N-based semiconductor (1≥Z>Y) above the active layer, wherein
a growth temperature at the second step is higher than 1200° C. and equal to or higher than a growth temperature at the first step.
2. The manufacturing method of a nitride semiconductor ultraviolet light-emitting element according to claim 1 , wherein a growth temperature at the second step is higher than a growth temperature at the first step.
3. The manufacturing method of a nitride semiconductor ultraviolet light-emitting element according to claim 2 , further comprising a fourth step of forming a first decomposition prevention layer following the n-type semiconductor layer at a same growth temperature as the first step immediately after the first step, wherein
the n-type semiconductor layer composed of an n-type Al X Ga 1-X N-based semiconductor (1>X≥0.5) is formed at the first step,
the first decomposition prevention layer is composed of an Al α Ga 1-α N-based semiconductor (1≥α>X), and has a thickness of 3 nm or less, and
at least after the fourth step ends, a growth temperature is increased and then the second step is performed.
4. The manufacturing method of a nitride semiconductor ultraviolet light-emitting element according to claim 1 , wherein a growth temperature at the third step is lower than a growth temperature at the second step.
5. The manufacturing method of a nitride semiconductor ultraviolet light-emitting element according to claim 4 , further comprising a fifth step of forming a second decomposition prevention layer following the active layer at a same growth temperature as the second step immediately after the second step, wherein
an uppermost layer of the active layer is composed of an Al Y1 Ga 1-Y1 N-based semiconductor (X>Y1≥Y),
the second decomposition prevention layer is composed of an Al β Ga 1-β N-based semiconductor (1≥β>Y1), and has a thickness of 3 nm or less and at least after the fifth step ends, a growth temperature is reduced and then the third step is performed.
6. The manufacturing method of a nitride semiconductor ultraviolet light-emitting element according to claim 1 , further comprising a sixth step of forming a p-type contact layer composed of a p-type Al Q Ga 1-Q N-based semiconductor (Z>Q≥0) above the p-type semiconductor layer, wherein
a growth temperature at the sixth step is lower than a growth temperature at the third step.
7. The manufacturing method of a nitride semiconductor ultraviolet light-emitting element according to claim 6 , further comprising a seventh step of forming a third decomposition prevention layer following the p-type semiconductor layer at a same growth temperature as the third step immediately after the third step, wherein
the p-type semiconductor layer composed of a p-type Al Z Ga 1-Z N-based semiconductor (1>Z>Y) is formed at the third step,
the third decomposition prevention layer is composed of an Al γ Ga 1-γ N-based semiconductor (1≥γ>Z), and has a thickness of 3 nm or less, and
at least after the seventh step ends, a growth temperature is reduced and then the sixth step is performed.
8. The manufacturing method of a nitride semiconductor ultraviolet light-emitting element according to claim 7 , wherein a growth temperature at the sixth step is lower than a growth temperature at the third step by 150° C. or more.
9. The manufacturing method of a nitride semiconductor ultraviolet light-emitting element according to claim 1 , further comprising an eighth step of performing a thermal treatment at a temperature higher than 1200° C. while supplying a gas containing 50% or more of nitrogen at least after the second step ends.
10. The manufacturing method of a nitride semiconductor ultraviolet light-emitting element according to claim 6 , wherein a growth temperature at the third step is equal to or lower than 1100° C.
11. The manufacturing method of a nitride semiconductor ultraviolet light-emitting element according to claim 1 , wherein the second step is a step of forming the active layer that has a single or multiple quantum well structure in which one or more well layers functioning as the light-emitting layer and one or more barrier layers composed of an Al R Ga 1-R N-based semiconductor (1>R>Y) are alternately laminated.
12. The manufacturing method of a nitride semiconductor ultraviolet light-emitting element according to claim 1 , wherein a growth temperature at the second step is equal to or higher than 1250° C.
13. A nitride semiconductor ultraviolet light-emitting element having a peak emission wavelength of 285 nm or shorter comprising:
an underlying portion including a sapphire substrate;
an n-type semiconductor layer composed of an n-type Al X Ga 1-X N-based semiconductor (1>X≥0.5), the n-type semiconductor layer being formed on an upper surface of the underlying portion;
an active layer that includes a light-emitting layer composed of an Al Y Ga 1-Y N-based semiconductor (X>Y>0) and that is composed of an AlGaN-based semiconductor as a whole, the active layer being formed above the n-type semiconductor layer; and
a p-type semiconductor layer composed of a p-type Al Z Ga 1-Z N-based semiconductor (1≥Z>Y), the p-type semiconductor layer being formed above the active layer, wherein
an Al composition ratio on an upper surface of the n-type semiconductor layer is larger than that inside of the n-type semiconductor layer, or a first decomposition prevention layer composed of an Al α Ga 1-α N-based semiconductor (1≥α>X) and having a thickness of 3 nm or less is formed on the upper surface of the n-type semiconductor layer.
14. The nitride semiconductor ultraviolet light-emitting element according to claim 13 , wherein
an uppermost layer of the active layer is composed of an Al Y1 Ga 1-Y1 N-based semiconductor (X>Y1≥Y), and
an Al composition ratio on an upper surface of the uppermost layer is larger than that inside of the uppermost layer, or a second decomposition prevention layer composed of an Al β Ga 1-β N-based semiconductor (1≥β>Y1) and having a thickness of 3 nm or less is formed on an upper surface of the active layer.
15. The nitride semiconductor ultraviolet light-emitting element according to claim 13 , further comprising a p-type contact layer formed above the p-type semiconductor layer, wherein
the p-type semiconductor layer is composed of a p-type Al Z Ga 1-Z N-based semiconductor (1>Z>Y),
the p-type contact layer is composed of a p-type Al Q Ga 1-Q N-based semiconductor (Z>Q A), and
an Al composition ratio on an upper surface of the p-type semiconductor layer is larger than that inside of the p-type semiconductor layer, or a third decomposition prevention layer composed of an Al γ Ga 1-γ N-based semiconductor (1≥γ>Z) and having a thickness of 3 nm or less is formed on the upper surface of the p-type semiconductor layer.
16. The nitride semiconductor ultraviolet light-emitting element according to claim 14 , further comprising a p-type contact layer formed above the p-type semiconductor layer, wherein
the p-type semiconductor layer is composed of a p-type Al Z Ga 1-Z N-based semiconductor (1>Z>Y),
the p-type contact layer is composed of a p-type Al Q Ga 1-Q N-based semiconductor (Z>Q≥0), and
an Al composition ratio on an upper surface of the p-type semiconductor layer is larger than that inside of the p-type semiconductor layer, or a third decomposition prevention layer composed of an Al γ Ga 1-γ N-based semiconductor (1≥γ>Z) and having a thickness of 3 nm or less is formed on the upper surface of the p-type semiconductor layer.