IP Library Granted Patent US 11,269,118
Granted Patent B2
US 11,269,118 · App. 16/331,716 · Granted Mar 8, 2022

Optical semiconductor element coating sheet

Inventors: Munehisa Mitani (Osaka, JP); Hirokazu Matsuda (Osaka, JP); Kazuaki Suzuki (Osaka, JP)
Assignee: EPISTAR CORPORATION
G02B5/0242H01L33/58G02B5/0268
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 11,269,118
App. No.
16/331,716
Granted
Mar 8, 2022
Kind
B2
Abstract

A sheet used for coating an optical semiconductor element is used for directly or indirectly covering an optical semiconductor element, and includes a white layer containing white particles; and a light diffusion layer containing light-diffusing particles, in this order in a thickness direction.

Claims (12)

1. A sheet, in an order in a thickness direction, comprising:

a white layer containing white particles; and

a light diffusion layer, containing light-diffusing particles, wherein the white layer covers a whole surface of the light diffusion layer and has a uniform thickness, and wherein the sheet is configured to directly coat an optical semiconductor element.

2. The sheet according to claim 1 , wherein a lightness L* in the thickness direction of the sheet is larger than 51.2 and less than 67.7.

3. The sheet according to claim 2 , wherein the lightness L* in the thickness direction of the sheet is larger than 55.7 and less than 66.6.

4. The sheet according to claim 1 , wherein an emitting angle of the light diffusion layer is larger than 20° and less than 120°.

5. The sheet according to claim 4 , wherein the emitting angle of the light diffusion layer is larger than 40° and less than 120°.

6. The sheet according to claim 1 , wherein a thickness of the light diffusion layer is larger than 30 μm and less than 600 μm.

7. The sheet according to claim 1 , wherein the light diffusion layer contains a B-stage resin.

8. The sheet according to claim 7 , wherein a curve indicating a relation between a temperature T and a shear storage modulus G′, obtained by measuring a dynamic viscoelasticity under a condition of a frequency of 1 Hz and a temperature increasing rate of 20° C./minute, has a minimum value,

wherein the temperature T at the minimum value falls within a range of higher than 40° C. and less than 200° C., and

wherein the shear storage modulus G′ at the minimum value falls within a range of larger than 1000 Pa and less than 90000 Pa.

Assignments (2)
CHANGE OF NAME Recorded Feb 18, 2026
From: EPISTAR CORPORATION
To: ENNOSTAR CORPORATION
Reel/Frame 075171/0402 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 17, 2021
From: MITANI, MUNEHISA; MATSUDA, HIROKAZU; SUZUKI, KAZUAKI
To: EPISTAR CORPORATION
Reel/Frame 055282/0849 →