Photonic component
The invention relates to a photonic component ( 1 ) having at least one semiconductor laser amplifier ( 200 ), which has at least one first mirror surface ( 210 a ) for coupling and/or decoupling optical radiation (S). The first mirror surface ( 210 a ) of the semiconductor laser amplifier ( 200 ) is coupled to a photonically integrated chip ( 100 ), wherein the chip ( 100 ) is arranged such that the chip can emit optical radiation (S) from the chip top side (O 100 ) thereof in the direction of the first mirror surface ( 210 a ) and couple said radiation in the semiconductor laser amplifier ( 200 ), and wherein the emitting of the radiation (S) away from the chip top side (O 100 ) occurs in the direction of the first mirror surface ( 210 a ) at an angle of 90°±20°, in particular perpendicular, to the chip top side (O 100 ).
1. A photonic component ( 1 ) having at least one semiconductor laser amplifier ( 200 ) comprising at least one first mirror surface ( 210 a ) for coupling in and/or coupling out optical radiation (S), characterized in that
the first mirror surface ( 210 a ) of the semiconductor laser amplifier ( 200 ) is coupled to a photonic integrated chip ( 100 ),
wherein the chip ( 100 ) is arranged in such a way that it can emit optical radiation (S) from its chip top side (O 100 ) in the direction of the first mirror surface ( 210 a ) and couple it into the semiconductor laser amplifier ( 200 ) and/or can receive at its chip top side (O 100 ) radiation (S) amplified by the semiconductor laser amplifier ( 200 ) and coming from the first mirror surface ( 210 a ) and couple it into itself,
wherein the radiation (S) is emitted away from the chip top side (O 100 ) in the direction of the first mirror surface ( 210 a ) at an angle of about 90°±20°, in particular perpendicular, to the chip top side (O 100 ) and/or the radiation (S) coming from the first mirror surface ( 210 a ) is coupled into the chip ( 100 ) at an angle of about 90°±20°, in particular perpendicular, to the chip top side (O 100 );
wherein the chip ( 100 ) further comprises:
a substrate ( 110 ),
at least one integrated optical waveguide ( 130 a ) which is integrated in one or more waveguiding material layers of the chip ( 100 ) situated on the substrate ( 110 ),
a first coupler, in particular grating coupler ( 135 a ), which is formed in the optical waveguide ( 130 a ) or is connected to the optical waveguide ( 130 a ), and
at least one optical diffraction and refraction structure which is arranged in a region of the chip top side (O 100 ) and which is integrated in one or more material layers of the chip ( 100 ) situated—as viewed from the substrate ( 110 )—above the first coupler and carries out a beam shaping of the radiation (S) before coupling into the waveguide ( 130 a ) or after coupling out of the waveguide ( 130 a ) and wherein the at least one optical diffraction and refraction structure is a Fresnel lens having elliptic rings which are not circular and not arranged concentrically with respect to one another;
the component ( 1 ) comprises at least one first and one second photonic integrated chip ( 100 , 300 ) which enclose the semiconductor laser amplifier ( 200 ) between them, in particular to form a sandwich structure,
the first mirror surface ( 210 a ) of the semiconductor laser amplifier ( 200 ) is coupled to the first chip ( 100 ) and a second mirror surface ( 210 b ) of the semiconductor laser amplifier ( 200 ) is coupled to a second chip ( 300 ); and
the first chip ( 100 ) comprises
wherein the at least one optical diffraction and refraction structure is radiation-connected to the first mirror surface ( 210 a ) of the semiconductor laser amplifier ( 200 ) and carries out a beam shaping of the radiation (S) after coupling out of the first waveguide ( 130 a ) and before emission at the chip top side (O 100 ), and
the second chip ( 300 ) comprises
a second integrated optical waveguide ( 130 b ),
a second coupler which is formed in the second optical waveguide ( 130 b ) or is connected to the second optical waveguide ( 130 b ),
a second optical diffraction and refraction structure which is arranged in a region of the second chip top side (O 300 ) and which is integrated in one or more material layers of the chip ( 300 ) situated—as viewed from the substrate ( 110 ) of the second chip ( 300 )—above the second coupler and is radiation-connected to the second mirror surface ( 210 b ) of the semiconductor laser amplifier ( 200 ) and carries out a beam shaping of the radiation (S) amplified by the semiconductor laser amplifier ( 200 ) before coupling into the second coupler.
2. The component ( 1 ) as claimed in claim 1 , characterized in that the chip ( 100 ) is connected to the semiconductor laser amplifier ( 200 ) in such a way, in particular bears by its chip top side (O 100 ) on the top side or underside (O 200 , U 200 ) of the semiconductor laser amplifier ( 200 ) in such a way, that the optical diffraction and refraction structure lies in the beam path between the first coupler and the first mirror surface ( 210 a ) of the semiconductor laser amplifier ( 200 ).
3. The component ( 1 ) as claimed in claim 1 , characterized in that
an active amplifier section ( 220 ) of the semiconductor laser amplifier ( 200 ) is situated in at least one active material layer ( 230 ) arranged on a top side of the semiconductor laser amplifier ( 200 ), and
the at least one active material layer ( 230 ) is arranged parallel to the material layer(s) of the chip ( 100 ) in which the at least one integrated optical waveguide ( 130 a ) of the chip ( 100 ) is integrated.
4. The component ( 1 ) as claimed in claim 1 , wherein
the second optical diffraction and refraction structure is arranged in the region of the chip top side (O 100 ) and is integrated in one or more material layers of the chip ( 100 ) situated—as viewed from the substrate ( 110 )—above both the first and second couplers.
5. The component ( 1 ) as claimed in claim 4 , characterized in that
the active material layer ( 230 ) is arranged parallel to the material layer(s) of the chip ( 100 ) in which both the first and second integrated optical waveguides ( 130 a , 130 b ) of the chip ( 100 ) are integrated.
6. The component ( 1 ) as claimed in claim 1 , characterized in that
one of the mirror surfaces ( 210 a , 210 b ), that is to say the first or the second mirror surface ( 210 a , 210 b ), forms an optical mirror connection between an optical beam interface (SS 1 ) of the semiconductor laser amplifier ( 200 ), said optical beam interface being arranged at the top side (O 200 ) of the semiconductor laser amplifier ( 200 ), and an active amplifier section ( 220 ) of the semiconductor laser amplifier ( 200 ), and
the other mirror surface ( 210 a , 210 b ) forms a mirror connection between an optical beam interface (SS 2 ) of the semiconductor laser amplifier ( 200 ), said optical beam interface being arranged at the underside (U 200 ) of the semiconductor laser amplifier ( 200 ), and the active amplifier section ( 220 ) of the semiconductor laser amplifier ( 200 ).
7. The component ( 1 ) as claimed in claim 6 , characterized in that
the second mirror surface ( 210 b ) is coupled to an optical fiber ( 500 ), the fiber longitudinal direction (L) of which is arranged at an angle of 90°±10°, in particular perpendicular, to the top side and/or underside (O 200 , U 200 ) of the semiconductor laser amplifier ( 200 ).
8. The component ( 1 ) as claimed in claim 1 , characterized in that
the first mirror surface ( 210 a ) forms an optical mirror connection between an optical beam interface (SS 1 ) arranged at the top side (O 200 ) of the semiconductor laser amplifier ( 200 ) and an active amplifier section ( 220 ) of the semiconductor laser amplifier ( 200 ), and
the second mirror surface ( 210 b ) forms a mirror connection between an optical beam interface (SS 2 ) arranged at the underside (U 200 ) of the semiconductor laser amplifier ( 200 ) and the active amplifier section ( 220 ) of the semiconductor laser amplifier ( 200 ).
9. The component ( 1 ) as claimed in claim 8 , characterized in that
an active amplifier section ( 220 ) of the semiconductor laser amplifier ( 200 ) is situated in at least one active material layer ( 230 ) arranged on a top side of the semiconductor laser amplifier ( 200 ), and
the active material layer ( 230 ) is arranged parallel to the material layer(s) of the first chip ( 100 ) in which the at least one integrated optical waveguide ( 130 a ) of the first chip ( 100 ) is integrated, and is arranged parallel to the material layer(s) of the second chip ( 300 ) in which at least one integrated optical waveguide ( 130 b ) of the second chip ( 300 ) is integrated.
10. The component ( 1 ) as claimed in claim 1 , characterized in that the first and second diffraction and refraction structures are different.
11. The component ( 1 ) as claimed in claim 1 , characterized in that
a layer section of at least one active material layer ( 230 ) arranged on a top side of the semiconductor laser amplifier ( 200 ) forms an amplifier section ( 220 ) of the semiconductor laser amplifier ( 200 ) that amplifies radiation (S) during the operation of the semiconductor laser amplifier ( 200 ),
a first strip waveguide ( 240 a ) optically connects the first mirror surface ( 210 a ) and the amplifier section ( 220 ), and
a second strip waveguide ( 240 b ) optically connects a second mirror surface ( 210 b ) and the amplifier section ( 220 ).
12. The component ( 1 ) as claimed in claim 11 , characterized in that the first and second strip waveguides ( 240 a , 240 b ) are formed by strips in the at least one active material layer ( 230 ) of the semiconductor laser amplifier ( 200 ).
13. The component ( 1 ) as claimed in claim 11 , characterized in that
the width of the first strip waveguide ( 240 a ) widens in the region upstream of the first mirror surface ( 210 a ) and in the direction of the first mirror surface ( 210 a ), and/or
the width of the second strip waveguide ( 240 b ) widens in the region upstream of the second mirror surface ( 210 b ) and in the direction of the second mirror surface ( 210 b ).
14. The component ( 1 ) as claimed in claim 11 , characterized in that
the width of the first strip waveguide ( 240 a ) decreases in the region upstream of the first mirror surface ( 210 a ) and in the direction of the first mirror surface ( 210 a ), and/or
the width of the second strip waveguide ( 240 b ) decreases in the region upstream of the second mirror surface ( 210 b ) and in the direction of the second mirror surface ( 210 b ).
15. The component ( 1 ) as claimed in claim 1 , characterized in that
the first mirror surface ( 210 a ) is at an angle of between 30° and 60° to the direction of propagation of the radiation (S) in the active material layer ( 230 ) of the semiconductor laser amplifier ( 200 ), and/or
a second mirror surface ( 210 b ) is arranged parallel to the first mirror surface ( 210 a ) or is arranged in a manner mirrored with respect to the latter, specifically in a manner mirrored about the surface normal to the active material layer ( 230 ).
16. The component ( 1 ) as claimed in claim 1 , characterized in that
two or more semiconductor laser amplifiers ( 200 ) lie in the same plane and are arranged linearly one behind another, in particular one behind another along the longitudinal direction of strip waveguides ( 240 a , 240 b ) of the semiconductor laser amplifiers ( 200 ) that are formed in the active material layer ( 230 ), and/or
two or more semiconductor laser amplifiers ( 200 ) lie in the same plane and are arranged linearly one behind another, in particular one behind another in an arrangement direction perpendicular to the longitudinal direction of the strip waveguides ( 240 a , 240 b ) of the semiconductor laser amplifiers ( 200 ) that are formed in the active material layer ( 230 ), and/or
two or more semiconductor laser amplifiers ( 200 ) lie in the same plane, specifically in a two-dimensional arrangement, wherein the plane lies parallel to the chip top side (O 100 ) of the chip(s) ( 100 , 300 ).
17. The component ( 1 ) as claimed in claim 1 , characterized in that at least one of the first mirror surface and a second mirror surface ( 210 a , 210 b ) of the semiconductor laser amplifier ( 200 ) is separated from an associated waveguide ( 240 a , 240 b ) of the semiconductor laser amplifier or at least an active amplifier section of the semiconductor laser amplifier ( 200 ) by way of a trench ( 700 ) provided in the semiconductor laser amplifier ( 200 ).
18. A photonic component ( 1 ) having at least one semiconductor laser amplifier ( 200 ) comprising at least one first mirror surface ( 210 a ) for coupling in and/or coupling out optical radiation (S), characterized in that
the first mirror surface ( 210 a ) of the semiconductor laser amplifier ( 200 ) is coupled to a photonic integrated chip ( 100 ),
wherein the chip ( 100 ) is arranged in such a way that it can emit optical radiation (S) from its chip top side (O 100 ) in the direction of the first mirror surface ( 210 a ) and couple it into the semiconductor laser amplifier ( 200 ) and/or can receive at its chip top side (O 100 ) radiation (S) amplified by the semiconductor laser amplifier ( 200 ) and coming from the first mirror surface ( 210 a ) and couple it into itself,
wherein the radiation (S) is emitted away from the chip top side (O 100 ) in the direction of the first mirror surface ( 210 a ) at an angle of about 90°±20°, in particular perpendicular, to the chip top side (O 100 ) and/or the radiation (S) coming from the first mirror surface ( 210 a ) is coupled into the chip ( 100 ) at an angle of about 90°±20°, in particular perpendicular, to the chip top side (O 100 );
wherein the chip ( 100 ) further comprises:
a substrate ( 110 ),
at least one integrated optical waveguide ( 130 a ) which is integrated in one or more waveguiding material layers of the chip ( 100 ) situated on the substrate ( 110 ),
a first coupler, in particular grating coupler ( 135 a ), which is formed in the optical waveguide ( 130 a ) or is connected to the optical waveguide ( 130 a ), and
at least one optical diffraction and refraction structure which is arranged in a region of the chip top side (O 100 ) and which is integrated in one or more material layers of the chip ( 100 ) situated—as viewed from the substrate ( 110 )—above the first coupler and carries out a beam shaping of the radiation (S) before coupling into the waveguide ( 130 a ) or after coupling out of the waveguide ( 130 a ) and wherein the at least one optical diffraction and refraction structure is a Fresnel lens having elliptic rings which are not circular and not arranged concentrically with respect to one another;
a layer section of at least one active material layer ( 230 ) arranged on a top side of the semiconductor laser amplifier ( 200 ) forms an amplifier section ( 220 ) of the semiconductor laser amplifier ( 200 ) that amplifies radiation (S) during the operation of the semiconductor laser amplifier ( 200 ),
a first strip waveguide ( 240 a ) optically connects the first mirror surface ( 210 a ) and the amplifier section ( 220 ),
a second strip waveguide ( 240 b ) optically connects a second mirror surface ( 210 b ) and the amplifier section ( 220 )
the width of the first strip waveguide ( 240 a ) widens in the region upstream of the first mirror surface ( 210 a ) and in the direction of the first mirror surface ( 210 a ), and/or
the width of the second strip waveguide ( 240 b ) widens in the region upstream of the second mirror surface ( 210 b ) and in the direction of the second mirror surface ( 210 b ).
19. A photonic component ( 1 ) having at least one semiconductor laser amplifier ( 200 ) comprising at least one first mirror surface ( 210 a ) for coupling in and/or coupling out optical radiation (S), characterized in that
the first mirror surface ( 210 a ) of the semiconductor laser amplifier ( 200 ) is coupled to a photonic integrated chip ( 100 ),
wherein the chip ( 100 ) is arranged in such a way that it can emit optical radiation (S) from its chip top side (O 100 ) in the direction of the first mirror surface ( 210 a ) and couple it into the semiconductor laser amplifier ( 200 ) and/or can receive at its chip top side (O 100 ) radiation (S) amplified by the semiconductor laser amplifier ( 200 ) and coming from the first mirror surface ( 210 a ) and couple it into itself,
wherein the radiation (S) is emitted away from the chip top side (O 100 ) in the direction of the first mirror surface ( 210 a ) at an angle of about 90°±20°, in particular perpendicular, to the chip top side (O 100 ) and/or the radiation (S) coming from the first mirror surface ( 210 a ) is coupled into the chip ( 100 ) at an angle of about 90°±20°, in particular perpendicular, to the chip top side (O 100 );
wherein the chip ( 100 ) further comprises:
a substrate ( 110 ),
at least one integrated optical waveguide ( 130 a ) which is integrated in one or more waveguiding material layers of the chip ( 100 ) situated on the substrate ( 110 ),
a first coupler, in particular grating coupler ( 135 a ), which is formed in the optical waveguide ( 130 a ) or is connected to the optical waveguide ( 130 a ), and
at least one optical diffraction and refraction structure which is arranged in a region of the chip top side (O 100 ) and which is integrated in one or more material layers of the chip ( 100 ) situated—as viewed from the substrate ( 110 )—above the first coupler and carries out a beam shaping of the radiation (S) before coupling into the waveguide ( 130 a ) or after coupling out of the waveguide ( 130 a ) and wherein the at least one optical diffraction and refraction structure is a Fresnel lens having elliptic rings which are not circular and not arranged concentrically with respect to one another;
a layer section of at least one active material layer ( 230 ) arranged on a top side of the semiconductor laser amplifier ( 200 ) forms an amplifier section ( 220 ) of the semiconductor laser amplifier ( 200 ) that amplifies radiation (S) during the operation of the semiconductor laser amplifier ( 200 ),
a first strip waveguide ( 240 a ) optically connects the first mirror surface ( 210 a ) and the amplifier section ( 220 ), and
a second strip waveguide ( 240 b ) optically connects a second mirror surface ( 210 b ) and the amplifier section ( 220 )
the width of the first strip waveguide ( 240 a ) decreases in the region upstream of the first mirror surface ( 210 a ) and in the direction of the first mirror surface ( 210 a ), and/or
the width of the second strip waveguide ( 240 b ) decreases in the region upstream of the second mirror surface ( 210 b ) and in the direction of the second mirror surface ( 210 b ).