Semiconductor device and method for forming a semiconductor device
In an embodiment, a semiconductor device includes a substrate body, an environmental sensor, a cap body and a volume of gas, wherein the environmental sensor and the volume of gas are arranged between the substrate body and the cap body in a vertical direction which is perpendicular to a main plane of extension of the substrate body, wherein at least one channel between the substrate body and the cap body connects the volume of gas with an environment of the semiconductor device such that the channel is permeable for gases, and wherein a thickness of the substrate body amounts to at least 80% of a thickness of the cap body and at most 120% of the thickness of the cap body.
1. A semiconductor device comprising:
a substrate body;
an environmental sensor;
a cap body; and
a volume of gas,
wherein the environmental sensor and the volume of gas are arranged between the substrate body and the cap body in a vertical direction which is perpendicular to a main plane of extension of the substrate body,
wherein at least one channel between the substrate body and the cap body connects the volume of gas with an environment of the semiconductor device such that the channel is permeable for gases,
wherein the substrate body and the cap body are connected via a bonding material,
wherein the channel extends in a lateral direction through the bonding material,
wherein a thickness of the substrate body amounts to at least 80% of a thickness of the cap body and at most 120% of the thickness of the cap body, and
wherein the bonding material comprises a porous polymer so that the bonding material is permeable for the gases in the lateral direction.
2. The semiconductor device according to claim 1 , wherein the environmental sensor comprises at least one of the following:
a capacitive pressure sensor with a membrane,
a temperature sensor,
an optical sensor,
an absolute pressure sensor,
a Hall sensor,
a gas sensor,
a humidity sensor,
a gas flow sensor, or
a differential pressure sensor.
3. The semiconductor device according to claim 1 , wherein the environmental sensor is arranged on an integrated circuit.
4. The semiconductor device according to claim 1 , wherein the semiconductor device is air-tight except for the channel.
5. The semiconductor device according to claim 1 , wherein the volume of gas is arranged above the environmental sensor, the channel is arranged next to the environmental sensor and the channel extends in the lateral direction which is perpendicular to the vertical direction.
6. The semiconductor device according to claim 1 , wherein a wall is arranged across a width of the channel, and wherein a thickness of the wall amounts to less than 10 μm in the lateral direction.
7. The semiconductor device according to claim 1 , wherein the thickness of the substrate body equals approximately the thickness of the cap body.
8. The semiconductor device according to claim 1 , wherein coefficients of thermal expansion of the cap body and the substrate body are approximately the same.
9. The semiconductor device according to claim 1 , wherein the channel comprises at least one bend.
10. The semiconductor device according to claim 1 , wherein the semiconductor device comprises at least one further channel, and wherein all channels are arranged symmetrically around the environmental sensor.
11. The semiconductor device according to claim 1 , wherein the cap body comprises a first part which is transparent for electromagnetic radiation or a second part which is opaque.
12. The semiconductor device according to claim 1 , wherein the cap body comprises at least one electrically conductive via.
13. The semiconductor device according to claim 1 , wherein the substrate body comprises at least one vertical, electrically conductive via, or wherein the semiconductor device is surface mountable.
14. The semiconductor device according to claim 1 , wherein the bonding material comprises at least one of the following:
a polymer,
a photo-definable glue,
a non-photosensitive glue,
a metal,
an oxide, or
a nitride.
15. A method for forming a semiconductor device, the method comprising:
providing an environmental sensor on a substrate body;
applying a bonding material on top of the substrate body;
forming at least one channel in the bonding material which extends through the bonding
material towards the environmental sensor; and
connecting a cap body via the bonding material to the substrate body,
wherein the at least one channel extends in a lateral direction through the bonding material, and
wherein a thickness of the substrate body amounts to at least 80% of a thickness of the cap body and at most 120% of the thickness of the cap body, and
wherein the bonding material comprises a porous polymer so that the bonding material is permeable for gases in the lateral direction.
16. The method according to claim 15 , wherein a vertical, electrically conductive via is formed in the substrate body after the cap body is connected with the bonding material.