SOLAR CELL EMITTER REGION FABRICATION APPARATUS
Solar cell emitter regions fabrication is described. In an example, a species mask, e.g., a shadow mask, is provided between a plasma source and a semiconductor wafer. The species mask includes an opening pattern having several openings with respective opening widths and pitches. Species emitted by the plasma source pass through the openings in the species mask and implant in the semiconductor wafer to form several emitter region fingers having respective finger widths and pitches. In an embodiment, the opening widths and pitches vary across the species mask and the emitter region finger widths and pitches are uniform across the semiconductor wafer.
1 . A species mask to be provided between a plasma source and a semiconductor wafer comprising:
a plurality of mask openings to pass species from the plasma source to the semiconductor wafer such that the species implant into a top surface to form a plurality of emitter region fingers on the semiconductor wafer, wherein the plurality of mask openings have one or more of respective nonuniform opening widths or respective nonuniform opening pitches such that the plurality of emitter region fingers have respective uniform finger widths and respective uniform finger pitches.
2 . The species mask according to claim 1 , wherein the species travel from the plasma source through the plurality of mask openings into the top surface of the semiconductor wafer.
3 . The species mask according to claim 1 , wherein the semiconductor wafer includes a centerline extending orthogonal to the top surface and the species mask, and wherein a respective nonuniform opening width of a respective mask opening has a negative relationship to a radial distance of the respective mask opening from the centerline.
4 . The species mask according to claim 1 , wherein the semiconductor wafer includes a centerline extending orthogonal to the top surface and the species mask, and wherein a respective nonuniform opening pitch between a pair of mask openings has a positive relationship to a radial distance of the pair of mask openings from the centerline.
5 . The species mask according to claim 1 , wherein the species mask is a shadow mask.
6 . The species mask according to claim 1 , wherein the semiconductor wafer is mounted on an electrostatic chuck, and wherein a temperature gradient of the semiconductor wafer increases radially outward from a center of the semiconductor wafer.
7 . The species mask according to claim 1 , wherein the species mask has slot openings of variable widths to compensate edge effects of an ion beam, non-uniform wafer temperatures, and/or chuck edge effects to result in uniform implanted patterns on the semiconductor wafer.
8 . The species mask according to claim 1 , wherein the plurality of mask openings have respective opening pitches that are varied so that the plurality of emitter region fingers have uniform finger pitches.
9 . A method of fabricating a solar cell, comprising:
providing a species mask between a plasma source and a semiconductor wafer, the species mask comprising a plurality of mask openings to pass species from the plasma source to the semiconductor wafer such that the species implant into a top surface to form a plurality of emitter region fingers on the semiconductor wafer, wherein the plurality of mask openings have one or more of respective nonuniform opening widths or respective nonuniform opening pitches such that the plurality of emitter region fingers have respective uniform finger widths and respective uniform finger pitches; and
delivering the species from the plasma source through the plurality of mask openings into the top surface of the semiconductor wafer.
10 . The method according to claim 9 , wherein the semiconductor wafer includes a centerline extending orthogonal to the top surface and the species mask, and wherein a respective nonuniform opening width of a respective mask opening has a negative relationship to a radial distance of the respective mask opening from the centerline.
11 . The method according to claim 9 , wherein the semiconductor wafer includes a centerline extending orthogonal to the top surface and the species mask, and wherein a respective nonuniform opening pitch between a pair of mask openings has a positive relationship to a radial distance of the pair of mask openings from the centerline.
12 . The method according to claim 9 , wherein the species mask is a shadow mask.
13 . The method according to claim 9 , wherein the semiconductor wafer is mounted on an electrostatic chuck, and wherein a temperature gradient of the semiconductor wafer increases radially outward from a center of the semiconductor wafer.
14 . The method according to claim 9 , wherein the species mask has slot openings of variable widths to compensate edge effects of an ion beam, non-uniform wafer temperatures, and/or chuck edge effects to result in uniform implanted patterns on the semiconductor wafer.
15 . The method according to claim 9 , wherein the plurality of mask openings have respective opening pitches that are varied so that the plurality of emitter region fingers have uniform finger pitches.
16 . A semiconductor fabrication apparatus, comprising:
a shadow mask; and
a plurality of mask openings in the shadow mask, wherein the plurality of mask openings have one or more of respective nonuniform opening widths or respective nonuniform opening pitches.
17 . The semiconductor fabrication apparatus according to claim 16 , wherein a respective nonuniform opening width of a respective mask opening has a negative relationship to a radial distance of the respective mask opening from a centerline of a semiconductor wafer.
18 . The semiconductor fabrication apparatus according to claim 16 , wherein a respective nonuniform opening pitch between a pair of mask openings has a positive relationship to a radial distance of the pair of mask openings from a centerline of a semiconductor wafer.
19 . The semiconductor fabrication apparatus according to claim 16 , wherein the shadow mask has slot openings of variable widths to compensate edge effects of an ion beam, non-uniform wafer temperatures, and/or chuck edge effects to result in uniform implanted patterns on a semiconductor wafer.
20 . The semiconductor fabrication apparatus according to claim 16 , wherein the shadow mask is a graphite shadow mask.