Poly-silicon layer and method of manufacturing the same, methods of manufacturing thin film transistor and array substrate

1. A method of manufacturing a poly-silicon layer, comprising:

forming an amorphous silicon layer;

crystallizing the amorphous silicon layer to form a first poly-silicon layer; and

processing the first poly-silicon layer to form a second poly-silicon layer using a green laser annealing process, wherein the crystallizing comprises crystallizing the amorphous silicon layer to form the first poly-silicon layer using an excimer laser annealing process, and the excimer laser adopted in the excimer laser annealing process has an energy density ranging from about 260 J/cm 2 to about 340 J/cm 2 .

2. The method of manufacturing the poly-silicon layer according to claim 1 , wherein the first poly-silicon layer has an average grain size ranging from about 180 nm to about 200 nm.

3. The method of manufacturing the poly-silicon layer according to claim 1 , wherein the green laser annealing process comprises scanning the first poly-silicon layer by a green laser.

4. The method of manufacturing the poly-silicon layer according to claim 3 , wherein the green laser has a wavelength ranging from about 500 nm to about 560 nm and an energy density ranging from about 300 mJ/cm 2 to about 400 mJ/cm 2 .

5. The method of manufacturing the poly-silicon layer according to claim 1 , wherein the second poly-silicon layer has an average grain size ranging from about 300 nm to about 320 nm.

6. The method of manufacturing the poly-silicon layer according to claim 1 , wherein grain sizes of the second poly-silicon layer has a standard deviation less than about 80 nm.

7. The method of manufacturing the poly-silicon layer according to claim 1 , further comprising:

de-hydrogenating the amorphous silicon layer before the crystallizing.

8. The method of manufacturing the poly-silicon layer according to claim 1 , further comprising:

providing a substrate, and

forming a buffer layer on the substrate before forming the amorphous silicon layer,

wherein the amorphous silicon layer is formed on the buffer layer.

9. A poly-silicon layer manufactured by the method according to claim 1 .

10. A method of manufacturing a thin film transistor, comprising:

forming a gate electrode, a poly-silicon active layer, a gate electrode insulating layer, a source electrode and a drain electrode,

wherein the poly-silicon active layer is formed by the method according to claim 1 .

11. The method of manufacturing the thin film transistor according to claim 10 , further comprising:

doping the poly-silicon active layer with the gate electrode as a mask after forming the gate electrode.

12. A method of manufacturing an array substrate, wherein the array substrate comprises a plurality of thin film transistors arranged in an array, and the method comprises:

preparing the plurality of thin film transistors by the method according to claim 10 .

13. The method of manufacturing the poly-silicon layer according to claim 2 , wherein the green laser annealing process comprises scanning the first poly-silicon layer by a green laser.

14. The method of manufacturing the poly-silicon layer according to claim 13 , wherein the green laser has a wavelength ranging from about 500 nm to about 560 nm and an energy density ranging from about 300 mJ/cm 2 to about 400 mJ/cm 2 .

15. The method of manufacturing the poly-silicon layer according to claim 14 , wherein the second poly-silicon layer has an average grain size ranging from about 300 nm to about 320 nm.