Magnetic memory device
View Patent ↗According to one embodiment, a magnetic memory device includes a first memory cell which includes a first stacked structure including a magnetic layer, and a second memory cell which is provided on the first memory cell and includes a second stacked structure including a magnetic layer, wherein each of the first stacked structure and the second stacked structure has a structure in which a plurality of layers including a predetermined layer are stacked, and the predetermined layer included in the first stacked structure and the predetermined layer included in the second stacked structure have different thicknesses.
1. A magnetic memory device comprising:
a first memory cell which includes a first stacked structure; and
a second memory cell which is provided on the first memory cell and includes a second stacked structure,
wherein:
each of the first stacked structure and the second stacked structure has a structure in which a plurality of layers including a first magnetic layer having a perpendicular magnetization and having a variable magnetization direction, a second magnetic layer having a fixed magnetization direction, and a nonmagnetic layer provided between the first magnetic layer and the second magnetic layer are stacked,
the plurality of layers included in each of the first stacked structure and the second stacked structure include a predetermined layer, and
the predetermined layer included in the first stacked structure and the predetermined layer included in the second stacked structure have different thicknesses.
2. The magnetic memory device according to claim 1 , wherein:
the predetermined layer is the first magnetic layer, and
a thickness of the first magnetic layer included in the second stacked structure is smaller than a thickness of the first magnetic layer included in the first stacked structure.
3. The magnetic memory device according to claim 1 , wherein:
each of the first stacked structure and the second stacked structure includes a first sub-stacked portion which includes the first magnetic layer, the second magnetic layer, and the nonmagnetic layer, and a second sub-stacked portion which includes an under layer for the first sub-stacked portion,
the predetermined layer is the under layer, and
a thickness of the under layer included in the second stacked structure is larger than a thickness of the under layer included in the first stacked structure.
4. The magnetic memory device according to claim 1 , wherein:
the second magnetic layer includes a first sub-magnetic layer and a second sub-magnetic layer provided between the nonmagnetic layer and the first sub-magnetic layer,
the predetermined layer is the first sub-magnetic layer, and
a thickness of the first sub-magnetic layer included in the second stacked structure is smaller than a thickness of the first sub-magnetic layer included in the first stacked structure.
5. The magnetic memory device according to claim 1 , wherein:
the second magnetic layer includes a first sub-magnetic layer and a second sub-magnetic layer provided between the nonmagnetic layer and the first sub-magnetic layer,
the predetermined layer is the second sub-magnetic layer, and
a thickness of the second sub-magnetic layer included in the second stacked structure is larger than a thickness of the second sub-magnetic layer included in the first stacked structure.
6. The magnetic memory device according to claim 1 , wherein:
each of the first stacked structure and the second stacked structure further includes a third magnetic layer canceling a magnetic field applied from the second magnetic layer to the first magnetic layer,
the predetermined layer is the third magnetic layer, and
a thickness of the third magnetic layer included in the second stacked structure is larger than a thickness of the third magnetic layer included in the first stacked structure.
7. The magnetic memory device according to claim 1 , wherein:
the first memory cell further includes a first switching element connected to the first stacked structure, and
the second memory cell further includes a second switching element connected to the second stacked structure.