Alkoxysilylamine compounds and applications thereof

1. A deposition process for depositing a film selected from a silicon-containing film, the process comprising:

a. providing a substrate in a CVD reactor;

b. placing one or more substrates into a reactor which is heated to a temperature of 100° C. or less at a pressure of 1 Torr or less;

c. introducing at least one alkoxysilylamine precursor represented by Formula B:

wherein R 1 is selected from a linear or branched C 1 to C 10 alkyl group, a C 3 to C 12 alkenyl group, a C 3 to C 12 alkynyl group, a C 4 to C 10 cyclic alkyl group, and a C 6 to C 10 aryl group; R 2 and R 5 are independently selected from the group consisting of hydrogen, a linear or branched C 1 to C 10 alkyl group, a C 2 to C 12 alkenyl group, a C 2 to C 12 alkynyl group, a C 4 to C 10 cyclic alkyl group, a C 6 to C 10 aryl group, and a linear or branched C 1 to C 10 alkoxy group; and R 3 is selected from the group consisting of hydrogen, a linear or branched C 1 to C 10 alkyl group, a C 2 to C 12 alkenyl group, a C 2 to C 12 alkynyl group, a C 4 to C 10 cyclic alkyl group, and a C 0 to C 10 aryl group;

d. providing a protonic source into the reactor to at least partially react with the at least one alkoxysilylamine precursor and deposit a silicon-containing film onto the one or more substrates; and

e. optionally introducing a catalyst to promote the film deposition process; and subjecting the resulting film to one or more of the following treatments selected from vacuum, thermal, an oxidative using ozone, UV, water vapor, e-beam, plasma and combinations thereof to form a solid dielectric film.

2. The process of claim 1 , wherein the precursor is selected from the group consisting of ((MeO) 2 HSi) 2 NH, ((EtO) 2 HSi) 2 NH, ((MeO) 2 MeSi) 2 NH, ((EtO) 2 MeSi) 2 NH, ((MeO)MeHSi) 2 NH, ((EtO)MeHSi) 2 NH, ((MeO) 2 HSi) 2 NMe, ((EtO) 2 HSi) 2 NMe, ((MeO) 2 MeSi) 2 NMe, ((EtO) 2 MeSi) 2 NMe, ((MeO)MeHSi) 2 NMe, ((EtO)MeHSi) 2 NMe, ((MeO) 2 HSi) 2 NEt, ((EtO) 2 HSi) 2 NEt, ((MeO) 2 MeSi) 2 NEt, ((EtO) 2 MeSi) 2 NEt, ((MeO)MeHSi) 2 NEt, ((EtO)MeHSi) 2 NEt, ((MeO) 2 HSi) 2 NPr n , ((EtO) 2 HSi) 2 NPr n , ((MeO) 2 MeSi) 2 NPr n , ((EtO) 2 MeSi) 2 NPr n , ((MeO)MeHSi) 2 NPr n , ((EtO)MeHSi) 2 NPr n , ((MeO) 2 HSi) 2 NPr i , ((EtO) 2 HSi) 2 NPr i , ((MeO) 2 MeSi) 2 NPr i , ((EtO) 2 MeSi) 2 NPr i , ((MeO)MeHSi) 2 NPr i , ((EtO)MeHSi) 2 NPr i , ((MeO) 2 HSi) 2 NBu t , ((EtO) 2 HSi) 2 NBu t , ((MeO) 2 MeSi) 2 NBu t , ((EtO) 2 MeSi) 2 NBu t , ((MeO)MeHSi) 2 NBu t , and ((EtO)MeHSi) 2 NBu t .

3. The process of claim 1 , wherein R 1 is a linear alkyl group.

4. The process of claim 3 , wherein the linear alkyl group is at least one selected from a methyl and an ethyl group.

5. The process of claim 1 wherein at least one of R 2 —R and R 5 is independently selected from the C 1 to C 10 alkoxy groups.

6. The process of claim 5 wherein C 1 to C 10 alkoxy groups are selected from the group consisting of methoxy, ethoxy, iso-propoxy, n-propoxy, tert-butoxy, iso-butoxy and sec-butoxy.

7. The process of claim 1 wherein at least one of R 2 , R 3 , and R 5 is hydrogen.

8. The process of claim 1 , wherein R 1 is selected from the group consisting of tert-butyl and tert-amyl.

9. The process of claim 1 wherein at least one of R 2 , R 3 , and R 5 is independently selected from the group consisting of methyl, ethyl, iso-propyl, sec-butyl, iso-butyl, tert-butyl, and tert-pentyl.

10. The process of claim 1 wherein the reactor is heated to a temperature of 50° C. or less.

11. The process of claim 1 wherein the reactor is at room temperature.

12. The process of claim 1 wherein the protonic source is hydrogen peroxide.