Polycrystalline diamond compact
View Patent ↗In an embodiment, a method of fabricating a polycrystalline diamond compact is disclosed. The method includes sintering a plurality of diamond particles in the presence of a metal-solvent catalyst to form a polycrystalline diamond body; leaching the polycrystalline diamond body to at least partially remove the metal-solvent catalyst therefrom, thereby forming an at least partially leached polycrystalline diamond body; and subjecting an assembly of the at least partially leached polycrystalline diamond body and a cemented carbide substrate to a high-pressure/high-temperature process at a pressure to infiltrate the at least partially leached polycrystalline diamond body with an infiltrant. The pressure of the high-pressure/high-temperature process is less than that employed in the act of sintering of the plurality of diamond particles.
1. A polycrystalline diamond compact, comprising:
a polycrystalline diamond table, at least an unleached portion of the polycrystalline diamond table including:
a plurality of diamond grains bonded together via diamond-to-diamond bonding to define interstitial regions, the plurality of diamond grains exhibiting an average grain size of about 50 μm or less; and
a catalyst including cobalt, the catalyst occupying at least a portion of the interstitial regions;
wherein the unleached portion of the polycrystalline diamond table exhibits a coercivity of about 115 Oe to about 250 Oe;
wherein the unleached portion of the polycrystalline diamond table exhibits a specific permeability less than about 0.10 G·cm 3 /g·Oe; and
a substrate bonded to the polycrystalline diamond table along an interfacial surface, the interfacial surface exhibiting a substantially planar topography;
wherein a lateral dimension of the polycrystalline diamond table is about 0.8 cm to about 1.9 cm.
2. The polycrystalline diamond compact of claim 1 wherein the unleached portion of the polycrystalline diamond table exhibits a specific magnetic saturation of about 15 G·cm 3 /g or less.
3. The polycrystalline diamond compact of claim 2 wherein:
the specific magnetic saturation is about 10 G·cm 3 /g to about 15 G·cm 3 /g; and
the unleached portion of the polycrystalline diamond table includes metal-solvent catalyst in an amount of about 3 weight % to about 7.5 weight %.
4. The polycrystalline diamond compact of claim 1 wherein a ratio of a surface area of a planar interfacial surface to a surface area of the substantially planar interfacial surface is greater than about 0.600.
5. The polycrystalline diamond compact of claim 4 wherein the ratio is about 0.600 to about 0.650.
6. The polycrystalline diamond compact of claim 5 wherein a G ratio of the polycrystalline diamond table is at least about 4.0×10 6 .
7. The polycrystalline diamond compact of claim 5 wherein the average grain size is about 30 μm or less.
8. The polycrystalline diamond compact of claim 4 wherein the ratio is about 0.750 to less than 1.0.
9. The polycrystalline diamond compact of claim 1 wherein the coercivity is about 115 Oe to about 175 Oe.
10. The polycrystalline diamond compact of claim 1 wherein the unleached portion of the polycrystalline diamond table exhibits a specific magnetic saturation of about 5 G·cm 3 /g to about 15 G·cm 3 /g.
11. The polycrystalline diamond compact of claim 1 wherein the lateral dimension of the polycrystalline diamond table is about 1.3 cm to about 1.9 cm.
12. The polycrystalline diamond compact of claim 1 wherein the polycrystalline diamond table is formed from only single layer of polycrystalline diamond extending from an upper working surface of the polycrystalline diamond table to the substrate.
13. The polycrystalline diamond compact of claim 1 wherein the polycrystalline diamond table includes:
a first layer including coarse-sized diamond grains exhibiting a first average grain size; and a second layer including fine-sized diamond grains.
14. A rotary drill bit, comprising:
a bit body including a leading end structure configured to facilitate drilling a subterranean formation; and
a plurality of cutting elements mounted to the bit body, at least one of the plurality of cutting elements configured as the polycrystalline diamond compact according to claim 1 .
15. A polycrystalline diamond compact, comprising:
a polycrystalline diamond table, at least an unleached portion of the polycrystalline diamond table including:
a plurality of diamond grains bonded together via diamond-to-diamond bonding to define defining interstitial regions, the plurality of diamond grains exhibiting an average grain size of about 50 μm or less; and
a catalyst including cobalt, the catalyst occupying at least a portion of the interstitial regions;
wherein the unleached portion of the polycrystalline diamond table exhibits:
a coercivity of about 115 Oe to about 250 Oe;
a specific magnetic saturation of about 10 G·cm 3 /g to about 15 G·cm 3 /g; and
a thermal stability, as determined by a distance cut, prior to failure in a vertical lathe test, of about 1300 m to about 3950 m;
wherein a lateral dimension of the polycrystalline diamond table is about 0.8 cm or more.
16. The polycrystalline diamond compact of claim 15 wherein the unleached portion of the polycrystalline diamond table includes metal-solvent catalyst in an amount of about 3 weight % to about 7.5 weight %.
17. The polycrystalline diamond compact of claim 16 wherein a ratio of a surface area of a planar interfacial surface to a surface area of the substantially planar interfacial surface is greater than about 0.600.
18. The polycrystalline diamond compact of claim 17 wherein the ratio is about 0.600 to about 0.650.
19. The polycrystalline diamond compact of claim 17 wherein the ratio is about 0.750 to less than 1.0.
20. The polycrystalline diamond compact of claim 16 wherein a G ratio of the polycrystalline diamond table is at least about 4.0×10 6 .
21. The polycrystalline diamond compact of claim 15 wherein the unleached portion of the polycrystalline diamond table exhibits a specific permeability less than about 0.10 G·cm 3 /g·Oe.
22. The polycrystalline diamond compact of claim 15 wherein the polycrystalline diamond table is formed from only single layer of polycrystalline diamond extending from an upper working surface of the polycrystalline diamond table to the substrate.
23. The polycrystalline diamond compact of claim 15 wherein the polycrystalline diamond table includes
a first layer including coarse-sized diamond grains exhibiting a first average grain size; and
a second layer including fine-sized diamond grains.
24. A polycrystalline diamond compact, comprising:
a polycrystalline diamond table, at least an unleached portion of the polycrystalline diamond table including:
a plurality of diamond grains bonded together via diamond-to-diamond bonding to define interstitial regions, the plurality of diamond grains exhibiting an average grain size of about 10 μm to about 18 μm; and
a catalyst including cobalt, the catalyst occupying at least a portion of the interstitial regions;
wherein the unleached portion of the polycrystalline diamond table exhibits a coercivity of about 115 Oe to about 250 Oe;
wherein the unleached portion of the polycrystalline diamond table exhibits a specific permeability of about 0.060 G·cm 3 /g·Oe to about 0.090 G·cm 3 /g·Oe; and
a substrate bonded to the polycrystalline diamond table along an interfacial surface, the interfacial surface exhibiting a substantially planar topography;
wherein a lateral dimension of the polycrystalline diamond table is about 1.3 cm to about 1.9 cm.
25. The polycrystalline diamond compact of claim 24 wherein:
the specific magnetic saturation is about 10 G·cm 3 /g to about 15 G·cm 3 /g; and
the unleached portion of the polycrystalline diamond table includes metal-solvent catalyst in an amount of about 3 weight % to about 7.5 weight %.
26. The polycrystalline diamond compact of claim 24 wherein a ratio of a surface area of a planar interfacial surface to a surface area of the substantially planar interfacial surface is greater than about 0.600.
27. The polycrystalline diamond compact of claim 26 wherein the ratio is about 0.600 to about 0.650.
28. The polycrystalline diamond compact of claim 26 wherein the ratio is about 0.750 to less than 1.0.