Forming semiconductor devices in silicon carbide
A method includes providing a first layer of epitaxial silicon carbide supported by a silicon carbide substrate, providing a second layer of epitaxial silicon carbide on the first layer, forming a plurality of semiconductor devices in the second layer, and separating the substrate from the second layer at the first layer. The first layer includes a plurality of voids.
1. A method, comprising:
providing a first layer of silicon carbide supported by a silicon carbide substrate;
providing a second layer of epitaxial silicon carbide on the first layer;
forming a plurality of semiconductor devices in the second layer; and
separating the substrate from the second layer at the first layer,
wherein the first layer comprises a plurality of voids,
wherein providing the first layer comprises using an epitaxial growth process
wherein a trench-fill process is used to define the plurality of voids,
wherein the epitaxial growth process is a step-controlled epitaxial growth process which uses an off-orientation direction with respect to a crystallographic face of the substrate,
wherein trenches of the trench-fill process enclose an angle of at least 1° with the off-orientation direction.
2. The method of claim 1 , wherein the trench-fill process comprises dry etching of lithographically-defined trenches, and/or damage implantation of the trenches, and/or electrochemical etching of the trenches.
3. The method of claim 1 , wherein a growth rate of the step-controlled epitaxial growth process of the first layer is in a lateral overgrowth regime for enclosing voids of the plurality of voids.
4. The method of claim 1 , further comprising:
using a reflow process, and
wherein a temperature of the reflow process is in a lateral closure regime for enclosing voids of the plurality of voids.
5. The method of claim 1 , further comprising:
etching ridges between adjacent voids of the plurality of voids.
6. The method of claim 1 , wherein the first layer comprises a first sublayer having a first void density and a second sublayer having a second void density, wherein the first sublayer is arranged in between the second sublayer and the substrate, and wherein the first void density is larger than the second void density.
7. The method of claim 1 , wherein providing the second layer comprises using an epitaxial growth process, wherein the second layer comprises a first sublayer and a second sublayer, wherein the first sublayer is arranged in between the second sublayer and the first layer, and wherein a growth rate of the epitaxial growth process of the first sublayer is smaller than a growth rate of the epitaxial growth process of the second sublayer.
8. The method of claim 1 , wherein voids of the plurality of voids have an elongated shape, and wherein longitudinal axes of the voids of the plurality of voids are aligned with each other.
9. The method of claim 1 , wherein voids of the plurality of voids are arranged in a lateral pattern defined in the first layer.
10. The method of claim 1 , wherein the first layer comprises dopants defining a resistivity of the first layer, and wherein the resistivity of the first layer is smaller than a resistivity of the substrate.
11. The method of claim 1 , further comprising:
planarizing the first layer prior to providing the second layer.
12. The method of claim 1 , wherein the first layer comprises a light-absorbing material, and wherein separating the substrate from the second layer comprises damaging the first layer using laser light absorbed by the light-absorbing material.
13. The method of claim 12 , wherein the light-absorbing material comprises dopants and/or at least one carbon layer obtained from a tempering process used for providing the first layer.
14. The method of claim 1 , wherein separating the substrate from the second layer comprises:
injecting a fluid into the plurality of voids and cooling the fluid below its freezing point; and/or rapid pressure changes; and/or
micro-electro-discharge-machining at the first layer.
15. The method of claim 1 , further comprising:
providing a protection material at vertical edges etched into the second layer.
16. The method of claim 1 , further comprising:
vertically dicing the second layer to singulate the semiconductor devices of the plurality of semiconductor devices,
wherein the second layer is diced prior to separating the substrate from the second layer.
17. The method of claim 1 , further comprising:
depositing a backside metallization layer on a remainder of the first layer after separating the substrate from the second layer.
18. The method of claim 1 , wherein the first layer is provided at a first growth rate, wherein the second layer is provided at a second growth rate, and wherein the first growth rate is smaller than the second growth rate.
19. The method of claim 1 , further comprising:
defining a drift region of the plurality of semiconductor devices in the second layer; and
defining a drain region or a backside emitter region of the plurality of semiconductor devices in the second layer.
20. A method, comprising:
providing a first layer of silicon carbide supported by a silicon carbide substrate;
providing a second layer of epitaxial silicon carbide on the first layer;
forming a plurality of semiconductor devices in the second layer;
etching ridges between adjacent voids of the plurality of voids; and
separating the substrate from the second layer at the first layer,
wherein the first layer comprises a plurality of voids,
wherein providing the first layer comprises using an epitaxial growth process.
21. A method, comprising:
providing a first layer of silicon carbide supported by a silicon carbide substrate;
providing a second layer of epitaxial silicon carbide on the first layer;
forming a plurality of semiconductor devices in the second layer; and
separating the substrate from the second layer at the first layer,
wherein the first layer comprises a plurality of voids,
wherein providing the first layer comprises using an epitaxial growth process,
wherein the first layer comprises a first sublayer having a first void density and a second sublayer having a second void density,
wherein the first sublayer is arranged in between the second sublayer and the substrate,
wherein the first void density is larger than the second void density.
22. A method, comprising:
providing a first layer of silicon carbide supported by a silicon carbide substrate;
providing a second layer of epitaxial silicon carbide on the first layer;
forming a plurality of semiconductor devices in the second layer;
planarizing the first layer prior to providing the second layer; and
separating the substrate from the second layer at the first layer,
wherein the first layer comprises a plurality of voids,
wherein providing the first layer comprises using an epitaxial growth process.
23. A method, comprising:
providing a first layer of silicon carbide supported by a silicon carbide substrate;
providing a second layer of epitaxial silicon carbide on the first layer;
forming a plurality of semiconductor devices in the second layer; and
separating the substrate from the second layer at the first layer,
wherein the first layer comprises a plurality of voids,
wherein providing the first layer comprises using an epitaxial growth process,
wherein the first layer comprises a light-absorbing material,
wherein separating the substrate from the second layer comprises damaging the first layer using laser light absorbed by the light-absorbing material.
24. The method of claim 23 , wherein the light-absorbing material comprises dopants and/or at least one carbon layer obtained from a tempering process used for providing the first layer.