Emitter array with shared via to an ohmic metal shared between adjacent emitters

1. A vertical cavity surface emitting laser (VCSEL) array, comprising:

a plurality of VCSELs including two adjacent VCSELs;

an ohmic metal layer associated with the plurality of VCSELs; and

a protective layer over the ohmic metal layer,

wherein the protective layer includes a via to the ohmic metal layer,

wherein the via is shared, and located, between the two adjacent VCSELs of the plurality of VCSELs.

2. The VCSEL array of claim 1 , wherein the via is located in an interstitial area adjacent to the two VCSELs.

3. The VCSEL array of claim 1 , wherein the ohmic metal layer comprises separate portions with corresponding vias,

wherein the via is one of the corresponding vias and included in one of the separate portions.

4. The VCSEL array of claim 3 , wherein the separate portions are located in corresponding interstitial areas between adjacent VCSELs of the plurality of VCSELs,

wherein the one of the separate portions is located between the two adjacent VCSELs.

5. The VCSEL array of claim 1 , wherein the ohmic metal layer comprises a portion that extends between corresponding apertures of the two adjacent VCSELs.

6. The VCSEL array of claim 1 , wherein the via is located radially between a pair of trenches shared by the two adjacent VCSELs.

7. The VCSEL array of claim 1 , wherein a radial distance between an aperture of one of the two adjacent VCSELs and the via is less than another radial distance between the aperture and a trench between the two adjacent VCSELs.

8. An emitter array, comprising:

a plurality of emitters that includes two adjacent emitters;

an ohmic metal layer associated with the plurality of emitters,

wherein the ohmic metal layer includes a portion that is shared by, and located between, the two adjacent emitters;

a protective layer over the ohmic metal layer; and

a via through the protective layer to the portion,

wherein the via is shared by, and located between, the two adjacent emitters.

9. The emitter array of claim 8 , wherein the via is located in an interstitial area between the two adjacent emitters.

10. The emitter array of claim 8 , wherein the ohmic metal layer comprises one or more other portions that are separate from the portion,

wherein the one or more other portions are associated with corresponding vias,

wherein the one or more other portions are associated with other emitters, of the emitter array, that are adjacent to one of the two adjacent emitters.

11. The emitter array of claim 10 , wherein the ohmic metal layer includes another portion associated with the one of the two adjacent emitters,

wherein the other portion electrically connects the portion and the one or more other portions to each other.

12. The emitter array of claim 8 , wherein the via and the portion are located radially between two adjacent trenches between the two adjacent emitters.

13. The emitter array of claim 8 , wherein the portion electrically connects corresponding apertures of the two adjacent emitters.

14. The emitter array of claim 8 , wherein a radial distance between an aperture of one of the two adjacent emitters and the via is less than a radial distance between the aperture and a trench between the two adjacent emitters.

15. A method of forming a laser array, comprising:

forming two adjacent lasers on or within a substrate;

forming, in association with forming the two adjacent lasers, an ohmic metal layer including forming a portion of the ohmic metal layer shared by, and in a location between, the two adjacent lasers;

forming, in association with forming the ohmic metal layer, a protective layer over the laser array; and

forming, in association with forming the protective layer, a via located between the two adjacent lasers through the protective layer to the ohmic metal layer.

16. The method of claim 15 , wherein forming the via comprises:

forming the via over the portion and such that the via is shared between the adjacent lasers.

17. The method of claim 15 , wherein forming the via comprises:

forming the via in an interstitial area adjacent to the two adjacent lasers.

18. The method of claim 15 , wherein forming the ohmic metal layer comprises:

forming additional portions of the ohmic metal layer,

wherein the additional portions are physically separate from the portion of the ohmic metal layer.

19. The method of claim 18 , wherein forming the ohmic metal layer comprises:

forming the portion and the additional portions in a radially spaced configuration around one of the two adjacent lasers.

20. The method of claim 15 , wherein forming the via comprises:

forming the via radially between a pair of trenches shared by the two adjacent lasers.