Semiconductor device
The semiconductor device includes a vertical Hall element that is provided in a first region of a semiconductor substrate and has a plurality of first electrodes, and a resistive element that is provided in a second region different from the first region in the semiconductor substrate and has a plurality of second electrodes. The plurality of first electrodes and the plurality of second electrodes are connected so that resistances of current paths are substantially the same in any phase in which the vertical Hall element is driven using a spinning current method.
1. A semiconductor device, comprising:
a vertical Hall element provided in a first region of a semiconductor substrate and having a plurality of first electrodes, the plurality of first electrodes including at least five electrodes disposed at intervals on a straight line; and
a resistive element provided in a second region different from the first region of the semiconductor substrate, having substantially the same structure as the vertical Hall element, and having a plurality of second electrodes, wherein
three electrodes of the plurality of first electrodes are connected such that a current path from an electrode at one end of the three electrodes to a central electrode is in parallel with a current path from an electrode at the other end to the central electrode, so as to form a first current path used in a spinning current method,
two electrodes other than the three electrodes of the plurality of first electrodes are connected such that a current path between the two electrodes of the plurality of first electrodes is in parallel with a current path between two electrodes of the plurality of second electrodes of the resistive element, so as to form a second current path used in the spinning current method, and
a resistance of the first current path is substantially the same as a resistance of the second current path.
2. The semiconductor device according to claim 1 , wherein the plurality of first electrodes comprises a plurality of third electrodes and a plurality of fourth electrodes equal in number to the plurality of third electrodes; and
the vertical Hall element comprises a first vertical Hall element part having the plurality of third electrodes and a second vertical Hall element part having the plurality of fourth electrodes.
3. The semiconductor device according to claim 2 , wherein the first vertical Hall element part, the second vertical Hall element part, and the resistive element have substantially the same structure.
4. The semiconductor device according to claim 1 , wherein the plurality of second electrodes comprises a plurality of fifth electrodes and a plurality of sixth electrodes equal in number to the plurality of fifth electrodes; and
the resistive element comprises a first resistive element part having the plurality of fifth electrodes and a second resistive element part having the plurality of sixth electrodes.
5. The semiconductor device according to claim 4 , wherein the vertical Hall element, the first resistive element part, and the second resistive element part have substantially the same structure.
6. The semiconductor device according to claim 2 , wherein the plurality of second electrodes comprises a plurality of fifth electrodes and a plurality of sixth electrodes equal in number to the plurality of fifth electrodes; and
the resistive element comprises a first resistive element part having the plurality of fifth electrodes and a second resistive element part having the plurality of sixth electrodes.
7. The semiconductor device according to claim 6 , wherein the first vertical Hall element part, the second vertical Hall element part, the first resistive element part, and the second resistive element part have substantially the same structure.
8. The semiconductor device according to claim 1 , wherein the two current paths between neighboring electrodes of the three electrodes connected in parallel in the first current path have substantially the same resistances.
9. The semiconductor device according to claim 1 , wherein the current path between the two electrodes of the plurality of first electrodes and the current path between the two electrodes of the plurality of second electrodes connected in parallel in the second current path have substantially the same resistances.
10. The semiconductor device according to claim 1 , wherein at least one interval between the electrodes of the plurality of first electrodes is not the same.