Atomic oscillator and frequency signal generation system

1. An atomic oscillator comprising:

a semiconductor laser that includes a resonator and an insulation layer disposed around the resonator, the resonator including a first mirror layer, a second mirror layer, and an active layer disposed between the first mirror layer and the second mirror layer;

an atomic cell which is irradiated light emitted from the semiconductor laser and in which an alkali metal atom is accommodated;

a light receiving element that detects intensity of light transmitted through the atomic cell and outputs a detection signal;

a first temperature control element that controls a temperature of the semiconductor laser;

a heat transfer member disposed in the insulation layer; and

a second temperature control element which is controlled based on the detection signal and is connected to the heat transfer member.

2. The atomic oscillator according to claim 1 ,

wherein the heat transfer member is disposed on an upper surface of the insulation layer.

3. The atomic oscillator according to claim 1 ,

wherein the heat transfer member is disposed on a side of the resonator.

4. The atomic oscillator according to claim 3 ,

wherein the heat transfer member is disposed on a side of the active layer.

5. The atomic oscillator according to claim 3 ,

wherein the heat transfer member is disposed in the insulation layer.

6. The atomic oscillator according to claim 4 ,

wherein the heat transfer member is disposed in the insulation layer.

7. The atomic oscillator according to claim 1 ,

wherein the insulation layer is disposed on a side surface of the active layer.

8. The atomic oscillator according to claim 4 ,

the insulation layer is disposed on a side surface of the active layer, and is sandwiched between the heat transfer member and the active layer.

9. The atomic oscillator according to claim 1 ,

wherein, in a plan view of the first mirror layer, the heat transfer member has

a first portion and a second portion that sandwich the second mirror layer in a first direction, and

a third portion and a fourth portion that sandwich the second mirror layer in a second direction orthogonal to the first direction.

10. The atomic oscillator according to claim 1 ,

wherein the second temperature control element and the semiconductor laser are disposed on a temperature control surface of the first temperature control element.

11. The atomic oscillator according to claim 1 , further comprising:

a container that accommodates the semiconductor laser, the first temperature control element, and the second temperature control element,

wherein the first temperature control element and the second temperature control element are disposed at positions different from each other in the container.

12. The atomic oscillator according to claim 1 , further comprising:

a temperature sensor,

wherein the first temperature control element is controlled based on an output of the temperature sensor.

13. A frequency signal generation system comprising:

an atomic oscillator that includes

a semiconductor laser that includes a resonator and an insulation layer disposed around the resonator, the resonator including a first mirror layer, a second mirror layer, and an active layer disposed between the first mirror layer and the second mirror layer,

an atomic cell which is irradiated with light emitted from the semiconductor laser and in which an alkali metal atom is accommodated,

a light receiving element that detects intensity of light transmitted through the atomic cell and outputs a detection signal,

a first temperature control element that controls a temperature of the semiconductor laser,

a heat transfer member disposed in the insulation layer, and

a second temperature control element which is controlled based on the detection signal and is connected to the heat transfer member.