Atomic oscillator and frequency signal generation system
An atomic oscillator includes a semiconductor laser, an atomic cell, a light receiving element, a first temperature control element, and a second temperature control element. The semiconductor laser includes a first mirror layer, a second mirror layer, and an active layer disposed between the first mirror layer, the second mirror layer, and a heat transfer member disposed on the second mirror layer. The atomic cell is irradiated with light emitted from the semiconductor laser. In the atomic cell, an alkali metal atom is accommodated. The light receiving element detects intensity of light transmitted through the atomic cell and outputs a detection signal. The first temperature control element controls a temperature of the semiconductor laser. The second temperature control element is controlled based on the detection signal and is connected to the heat transfer member.
1. An atomic oscillator comprising:
a semiconductor laser that includes
a first mirror layer,
a second mirror layer,
an active layer disposed between the first mirror layer and the second mirror layer, and
a heat transfer member disposed on the second mirror layer;
an atomic cell which is irradiated with light emitted from the semiconductor laser and in which an alkali metal atom is accommodated;
a light receiving element that detects intensity of light transmitted through the atomic cell and outputs a detection signal;
a first temperature control element that controls a temperature of the semiconductor laser;
a temperature sensor; and
a second temperature control element which is controlled based on the detection signal and is connected to the heat transfer member,
wherein the first temperature control element is controlled based on an output of the temperature sensor.
2. The atomic oscillator according to claim 1 ,
wherein the second mirror layer is disposed on the active layer, and
the heat transfer member is disposed on an upper surface of the second mirror layer.
3. The atomic oscillator according to claim 1 ,
wherein the heat transfer member is an electrode that causes a current to flow into the active layer.
4. The atomic oscillator according to claim 2 ,
wherein the heat transfer member is an electrode that causes a current to flow into the active layer.
5. The atomic oscillator according to claim 3 ,
wherein the heat transfer member is connected to the second temperature control element by a wiring for supplying a current to the heat transfer member.
6. The atomic oscillator according to claim 1 ,
wherein the second temperature control element and the semiconductor laser are disposed on a temperature control surface of the first temperature control element.
7. The atomic oscillator according to claim 1 , further comprising:
a container that accommodates the semiconductor laser, the first temperature control element, and the second temperature control element,
wherein the first temperature control element and the second temperature control element are disposed at positions different from each other in the container.
8. A frequency signal generation system comprising:
an atomic oscillator includes
a semiconductor laser that includes
a first mirror layer,
a second mirror layer,
an active layer disposed between the first mirror layer and the second mirror layer, and
a heat transfer member disposed on the second mirror layer,
an atomic cell which is irradiated with light emitted from the semiconductor laser and in which an alkali metal atom is accommodated,
a light receiving element that detects intensity of light transmitted through the atomic cell and outputs a detection signal,
a first temperature control element that controls a temperature of the semiconductor laser,
a temperature sensor, and
a second temperature control element which is controlled based on the detection signal and is connected to the heat transfer member,
wherein the first temperature control element is controlled based on an output of the temperature sensor.