SEMICONDUCTOR DEVICE

1 . A semiconductor device comprising:

a semiconductor module comprising a semiconductor element and a power terminal connected to the semiconductor element; and

a busbar connected to the power terminal of the semiconductor module via a connection member,

wherein

a fusing current of the connection member is smaller than each of fusing currents of the power terminal and the busbar.

2 . The semiconductor device according to claim 1 , wherein a joint interface between the connection member and the power terminal is parallel with a joint interface between the connection member and the busbar.

3 . The semiconductor device according to claim 2 , wherein the joint interface between the connection member and the power terminal is located in a same plane Where a joint interface between the connection member and the busbar is located.

4 . The semiconductor device according to claim 2 , wherein

the semiconductor module further comprises an encapsulant encapsulating the semiconductor element,

the power terminal comprises a first portion extending outside from the encapsulant and a second portion extending along a direction perpendicular to a direction along which the first portion extends, and

the connection member is joined at the second portion of the power terminal.

5 . The semiconductor device according to claim 1 , wherein a material of the connection member has a melting point which is lower than each of melting points of materials of the power terminal and the busbar.

6 . The semiconductor device according to claim 1 , wherein

the connection member comprises an inner portion and an outer portion covering the inner portion, and

a material of the inner portion has electric resistivity which is lower than electric resistivity of a material of the outer portion.

7 . The semiconductor device according to claim 1 , wherein the connection member comprises a bent portion at an intermediate position in a longitudinal direction of the connection member.

8 . The semiconductor device according to claim 1 , wherein the connection member comprises a weak portion where a cross section of the connection member is locally reduced, the cross section being perpendicular to a longitudinal direction of the connection member.

9 . A semiconductor device comprising:

a first semiconductor module comprising a first switching element, a first power terminal, and a second power terminal, the first power terminal connected to the second power terminal via the first switching element;

a second semiconductor module comprising a second switching element, a third power terminal, and a fourth power terminal, the third power terminal connected to the fourth power terminal via the second switching element;

a first busbar connected to the first power terminal of the first semiconductor module via a first connection member;

a second busbar connected to the second power terminal of the first semiconductor module via a second connection member and connected to the third power terminal of the second semiconductor module via a third connection member; and

a third busbar connected to the fourth power terminal of the second semiconductor module via a fourth connection member,

wherein

a fusing current of the first connection member is smaller than each of fusing currents of the first power terminal and the first busbar,

a fusing current of the second connection member is smaller than each of fusing currents of the second power terminal and the second busbar,

a fusing current of the third connection member is smaller than each of fusing currents of the third power terminal and the second busbar, and

a fusing current of the fourth connection member is smaller than each of fusing currents of the fourth power terminal and the third busbar.