IP Library Granted Patent US 11,038,071
Granted Patent B2
US 11,038,071 · App. 16/368,662 · Granted Jun 15, 2021

Solar cell, solar cell module, and method for manufacturing solar cell

Inventors: Minato Seno (Osaka, JP); Hiroyuki Yamada (Osaka, JP)
Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
H01L31/02363H01L31/02167H01L31/02168H01L31/0747H01L31/202Y02E10/50
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Quick Facts
Patent No.
US 11,038,071
App. No.
16/368,662
Granted
Jun 15, 2021
Kind
B2
Abstract

A solar cell includes: a silicon substrate including a texture structure in a first principal surface; and a first non-crystalline silicon layer formed on the first principal surface of the silicon substrate and including recesses and protrusions reflecting the texture structure. At a valley portion in the recesses and protrusions, the first non-crystalline silicon layer includes, in the stated order: a first epitaxial layer including a crystalline region epitaxially grown on the silicon substrate; a first amorphous layer which is a non-crystalline silicon layer; and a second amorphous layer which is a non-crystalline silicon layer. The density of the first amorphous layer is less than the density of the second amorphous layer.

Claims (35)

1. A solar cell, comprising:

a silicon substrate including, in a first principal surface, a texture structure in which a plurality of pyramids are arranged in a matrix; and

a first non-crystalline silicon layer on the first principal surface of the silicon substrate, the first non-crystalline silicon layer including recesses and protrusions reflecting the texture structure, wherein:

at a valley portion in the recesses and protrusions, the first non-crystalline silicon layer includes, in stated order:

a first epitaxial layer including a crystalline region epitaxially grown on the silicon substrate;

a first amorphous layer which is a non-crystalline silicon layer on the first epitaxial layer; and

a second amorphous layer which is a non-crystalline silicon layer on the first amorphous layer,

the first amorphous layer has a density less than a density of the second amorphous layer,

the first amorphous layer and the second amorphous layer are made of a same material and have a same conductivity type, and

the first amorphous layer has a thickness less than a thickness of the second amorphous layer.

2. The solar cell according to claim 1 , wherein

the first amorphous layer has a thickness of between 1 nm and 3 nm, inclusive.

3. The solar cell according to claim 1 , wherein

the first epitaxial layer further includes a non-crystalline region.

4. The solar cell according to claim 1 , wherein

the first epitaxial layer has a density greater than the density of the first amorphous layer.

5. The solar cell according to claim 1 , wherein

in an entire region of the recesses and protrusions including the valley portion, the first non-crystalline silicon layer includes the first epitaxial layer, the first amorphous layer, and the second amorphous layer in stated order.

6. The solar cell according to claim 1 , wherein

a part of at least one of the first epitaxial layer, the first amorphous layer, and the second amorphous layer is of a conductivity type identical to a conductivity type of the silicon substrate.

7. The solar cell according to claim 1 , wherein

the silicon substrate further includes, in a second principal surface opposite to the first principal surface, a texture structure in which a plurality of pyramids are arranged in a matrix,

the solar cell further comprises;

a second non-crystalline silicon layer on the second principal surface of the silicon substrate, the second non-crystalline silicon layer including recesses and protrusions reflecting the texture structure,

at a valley portion in the recesses and protrusions, the second non-crystalline silicon layer includes, in stated order:

a second epitaxial layer including a crystalline region epitaxially grown on the silicon substrate;

a third amorphous layer which is a non-crystalline silicon layer on the second epitaxial layer; and

a fourth amorphous layer which is a non-crystalline silicon layer on the third amorphous layer, and

the third amorphous layer has a density less than a density of the fourth amorphous layer.

8. A solar cell module, comprising:

a plurality of solar cells each of which is the solar cell according to claim 1 .

9. The solar cell according to claim 1 , wherein

the first amorphous layer does not include the crystalline region.

10. The solar cell according to claim 1 , wherein

the first epitaxial layer, the first amorphous layer, and the second amorphous layer are made of the same material.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 26, 2025
From: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
To: RISEN ENERGY CO., LTD.
Reel/Frame 072119/0985 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 30, 2019
From: SENO, MINATO; YAMADA, HIROYUKI
To: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
Reel/Frame 050571/0151 →
Priority Claims (1)
JP JP2016-195006 · Sep 30, 2016 · national
Continuity (2)
Continuation PCTJP2017034056 · Sep 21, 2017
Related Publication 20190221684A1 · Jul 18, 2019