IP Library Granted Patent US 11,049,664
Granted Patent B2
US 11,049,664 · App. 16/368,939 · Granted Jun 29, 2021

Solid electrolytic capacitor containing a vapor-deposited barrier film

Inventors: Jan Petrzilek (Usti nad Orlici, CZ); Mitchell D. Weaver (Simpsonville, SC); Miloslav Uher (Lanskoun, CZ)
Assignee: AVX Corporation
H01G9/052C23C16/0245H01G9/0032H01G9/0036H01G9/012H01G9/025H01G11/26H01G9/15H01G2009/05
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Quick Facts
Patent No.
US 11,049,664
App. No.
16/368,939
Granted
Jun 29, 2021
Kind
B2
Abstract

A capacitor comprising a solid electrolytic capacitor element that contains a sintered porous anode body, a dielectric that overlies the anode body, and a solid electrolyte that overlies the dielectric. The capacitor further contains a barrier film that is formed by vapor deposition and that is positioned between the dielectric and the solid electrolyte or overlies the dielectric.

Claims (36)

1. A method for forming a solid electrolytic capacitor element, the method comprising:

positioning a capacitor element within a reactor vessel, wherein the capacitor element comprises a sintered porous anode body and a dielectric overlying the anode body;

forming a barrier film on the capacitor element by a vapor deposition process, the process including subjecting the capacitor element to a reaction cycle that includes contacting the capacitor element with a gaseous precursor compound that bonds to a surface of the dielectric; and

applying a solid electrolyte over the film.

2. The method of claim 1 , wherein the vapor deposition process includes atomic layer deposition, molecular layer deposition, physical vapor deposition, plasma-enhanced physical vapor deposition, chemical vapor deposition, plasma-enhanced chemical vapor deposition, or a combination thereof.

3. The method of claim 1 , wherein precursor compound includes a polyarylene.

4. The method of claim 3 , wherein the polyarylene has the following general structure:

wherein,

R 1 is alkyl, alkenyl, halo, or haloalkyl; and

R 2 , R 3 , R 4 , R 5 , and R 6 are independently selected from hydrogen, alkyl, alkenyl, halo, or haloalkyl, wherein one or more of R 1 , R 2 , R 3 , R 4 , R 5 , or R 6 are optionally bonded with a second polyarylene ring structure to form a dimer.

5. The method of claim 3 , wherein the polyarylene is 1,4-dimethylbenzene, 1,3-dimethylbenzene, 1,2-dimethylbenzene, toluene, 4-methyl styrene, 3-methylstyrene, 2-methylstyrene, 1,4-divinylbenzene, 1,3-divinylbenzene, 1,2-divinylbenzene, chlorinated polyarylene, [2,2]paracylcophane, or a combination thereof.

6. The method of claim 1 , wherein the reaction cycle further comprises contacting the capacitor element with a gaseous co-reactant.

7. The method of claim 6 , wherein the co-reactant includes a fluorohydrocarbon compound.

8. The method of claim 1 , wherein the capacitor element is heated to a temperature of about 200° C. or less during the reaction cycle.

9. The method of claim 1 , further comprising subjecting the capacitor element to one or more additional reaction cycles that include contacting the capacitor element with a gaseous precursor compound.

10. The method of claim 1 , wherein the solid electrolyte includes a layer formed from a dispersion of conductive polymer particles.

11. The method of claim 1 , wherein the solid electrolyte includes a layer formed by solution phase polymerization.

12. The method of claim 1 , wherein the anode body includes tantalum and the dielectric includes tantalum pentoxide.

13. A method for forming a solid electrolytic capacitor element, the method comprising:

positioning a capacitor element within a reactor vessel, wherein the capacitor element comprises a sintered porous anode body and a dielectric overlying the anode body;

applying a solid electrolyte over the dielectric; and

forming a barrier film on the capacitor element by a vapor deposition process, the process including subjecting the capacitor element to a reaction cycle that includes contacting the capacitor element with a gaseous precursor compound that bonds to the solid electrolyte.

14. The method of claim 13 , wherein the vapor deposition process includes atomic layer deposition, molecular layer deposition, physical vapor deposition, plasma-enhanced physical vapor deposition, chemical vapor deposition, plasma-enhanced chemical vapor deposition, or a combination thereof.

15. The method of claim 13 , wherein precursor compound includes a polyarylene.

16. The method of claim 15 , wherein the polyarylene has the following general structure:

wherein,

R 1 is alkyl, alkenyl, halo, or haloalkyl; and

R 2 , R 3 , R 4 , R 5 , and R 6 are independently selected from hydrogen, alkyl, alkenyl, halo, or haloalkyl, wherein one or more of R 1 , R 2 , R 3 , R 4 , R 5 , or R 6 are optionally bonded with a second polyarylene ring structure to form a dimer.

17. The method of claim 15 , wherein the polyarylene is 1,4-dimethylbenzene, 1,3-dimethylbenzene, 1,2-dimethylbenzene, toluene, 4-methyl styrene, 3-methylstyrene, 2-methylstyrene, 1,4-divinylbenzene, 1,3-divinylbenzene, 1,2-divinylbenzene, chlorinated polyarylene, [2,2]paracylcophane, or a combination thereof.

18. The method of claim 13 , wherein the reaction cycle further comprises contacting the capacitor element with a gaseous co-reactant.

19. The method of claim 18 , wherein the co-reactant includes a fluorohydrocarbon compound.

20. The method of claim 13 , wherein the capacitor element is heated to a temperature of about 200° C. or less during the reaction cycle.

21. The method of claim 13 , further comprising subjecting the capacitor element to one or more additional reaction cycles that include contacting the capacitor element with a gaseous precursor compound.

22. The method of claim 13 , wherein the solid electrolyte includes a layer formed from a dispersion of conductive polymer particles.

23. The method of claim 13 , wherein the solid electrolyte includes a layer formed by solution phase polymerization.

24. The method of claim 13 , wherein the anode body includes tantalum and the dielectric includes tantalum pentoxide.

Assignments (2)
CHANGE OF NAME Recorded Dec 22, 2021
From: AVX CORPORATION
To: KYOCERA AVX COMPONENTS CORPORATION
Reel/Frame 058563/0762 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 29, 2019
From: PETRZILEK, JAN; WEAVER, MITCHELL D.; UHER, MILOSLAV
To: AVX CORPORATION
Reel/Frame 048735/0633 →
Continuity (2)
Provisional Application 62657152 · Apr 13, 2018
Related Publication 20190318880A1 · Oct 17, 2019