Front metal contact stack
A photovoltaic device and a method of forming a contact stack of the photovoltaic device are disclosed. The photovoltaic device may include a first layer deposited on a semiconductor layer including a compound semiconductor material. The photovoltaic device may also include a dopant layer comprising tin (Sn) deposited on the first layer. The photovoltaic device may further include a conductive layer deposited or provided over the dopant layer to form a contact stack with the first layer and the dopant layer.
1. A method for forming a contact stack of a photovoltaic device, comprising:
depositing a first layer including palladium on a semiconductor layer including a compound semiconductor material;
depositing a dopant layer formed of tin on the first layer;
depositing a conductive layer on the dopant layer to form the contact stack with the first layer; and
annealing the contact stack until a portion of the dopant layer forms a doped area or an anti-doped area within an area of the semiconductor layer, another portion of the dopant layer is combined into the conductive layer, and the dopant layer and the first layer form a single intermediate layer between the semiconductor layer and the conductive layer.
2. The method of claim 1 , wherein the compound semiconductor material comprises a group III-V semiconductor material.
3. The method of claim 2 , wherein the group III-V semiconductor material comprises a combination of two or more of gallium (Ga), arsenic (As), aluminum (Al), indium (In), or phosphorus (P).
4. The method of claim 1 , wherein the semiconductor layer comprises an n-type semiconductor material.
5. The method of claim 1 , wherein the first layer further comprises one or more of nickel (Ni) or platinum (Pt).
6. The method of claim 1 , wherein the dopant layer comprises one or more alloying materials to form an alloy with the tin.
7. The method of claim 6 , wherein the one or more alloying materials comprises lead (Pb), bismuth (Bi), antimony (Sb), copper (Cu), or indium (In).
8. The method of claim 1 , wherein the conductive layer includes a conductive metallic material.
9. The method of claim 8 , wherein the conductive metallic material comprises one or more of copper (Cu), tin (Sn), or gold (Au).
10. The method of claim 1 ,
wherein the annealing of the contact stack is performed at a temperature less than or equal to 200° C.
11. The method of claim 1 , wherein one or more of the depositing of the first layer, the depositing of the dopant layer, or the depositing of the conductive layer includes performing a deposition by an electrochemical process.
12. The method of claim 11 , wherein the electrochemical process is one or more of a galvanic displacement process, an electroless deposition process, or an electroplating process.