IP Library Granted Patent US 10,797,032
Granted Patent B2
US 10,797,032 · App. 16/371,727 · Granted Oct 6, 2020

Light-emitting element module

Inventors: Yuta Ikawa (Sakai, JP); Hiroyoshi Higashisaka (Sakai, JP); Tsuyoshi Ono (Sakai, JP); Keiichi Sawai (Sakai, JP)
Assignee: SHARP KABUSHIKI KAISHA
H01L25/167H01L23/528H01L23/5228H01L25/0753H01L28/20H01L33/60H01L33/62H01L33/647
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Quick Facts
Patent No.
US 10,797,032
App. No.
16/371,727
Granted
Oct 6, 2020
Kind
B2
Abstract

In a light-emitting element module, at least two or more first electrodes of a first substrate that includes a circuit element are joined to at least two or more light-emitting elements. The first substrate includes a first wiring line to an n-th wiring line (n is an integer of 2 or more) that are formed into layers in order from the at least two or more light-emitting elements in a thickness direction of the first substrate. The first wiring line that is located in one of the layers of the first substrate nearest to the at least two or more light-emitting elements is formed at least in an interelectrode region between the adjacent first electrodes of the first substrate in a plan view.

Claims (20)

1. A light-emitting element module comprising:

at least two or more first electrodes of a first substrate that includes a circuit element; and

at least two or more light-emitting elements that are joined to the at least two or more first electrodes,

wherein the first substrate further includes a first wiring line to an n-th wiring line (n is an integer of 2 or more) that is formed into layers in order from the at least two or more light-emitting elements in a thickness direction of the first substrate,

wherein the first wiring line that is located in one of the layers of the first substrate nearest to the at least two or more light-emitting elements is formed at least in an interelectrode region between the adjacent first electrodes of the first substrate in a plan view, and

wherein a protective layer is formed as an outermost surface of the first substrate near the at least two or more light-emitting elements, the protective layer has an opening, the at least two or more first electrodes of the first substrate that are joined to second electrodes of the at least two or more light-emitting elements extend through the opening, and a second wiring line that is located in a layer adjacent to the first wiring line that is connected to the at least two or more first electrodes overlaps at least one of end portions of the first wiring line in a plan view.

2. The light-emitting element module according to claim 1 ,

wherein the first wiring line of the first substrate has a light-reflection function of reflecting light from the at least two or more light-emitting elements and a heat-dissipation function of dissipating heat from the at least two or more light-emitting elements.

3. The light-emitting module according to claim 1 ,

wherein the circuit element of the first substrate is disposed in an overlap region in which the at least two or more first electrodes of the first substrate overlap the second electrodes of the at least two or more light-emitting elements.

4. A light-emitting element module comprising:

at least two or more first electrodes of a first substrate that includes a circuit element; and

at least two or more light-emitting elements that are joined to the at least two or more first electrodes,

wherein the first substrate further includes a first wiring line to an n-th wiring line (n is an integer of 2 or more) that is formed into layers in order from the at least two or more light-emitting elements in a thickness direction of the first substrate,

wherein the first wiring line that is located in one of the layers of the first substrate nearest to the at least two or more light-emitting elements is formed at least in an interelectrode region between the adjacent first electrodes of the first substrate in a plan view, and

wherein the n is 10 or less, at least one of a gate polysilicon layer and a diffusion layer is formed in addition to the layers of the wiring lines, and at least one of the first wiring line to the n-th wiring line is connected to a resistor that is formed in the at least one of the gate polysilicon layer and the diffusion layer.

5. The light-emitting element module according to claim 4 ,

wherein the resistor is connected to a gate electrode of the first substrate.

6. The light-emitting element module according to claim 4 ,

wherein the resistor is connected to one of the at least two or more first electrodes of the first substrate.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 7, 2025
From: SHARP KABUSHIKI KAISHA
To: SHARP FUKUYAMA LASER CO., LTD.
Reel/Frame 071863/0485 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 1, 2019
From: IKAWA, YUTA; HIGASHISAKA, HIROYOSHI; ONO, TSUYOSHI; SAWAI, KEIICHI
To: SHARP KABUSHIKI KAISHA
Reel/Frame 048757/0034 →