Light emitting diode package and manufacturing method thereof

1. A light-emitting diode package, comprising:

a light-emitting diode chip disposed in a housing;

a first phosphor configured to emit green light; and

a second phosphor configured to emit red light,

wherein:

a white light is configured to be formed by a synthesis of light emitted from the light-emitting diode chip, the first phosphor, and the second phosphor;

the light-emitting diode chip comprises at least one of a blue light-emitting diode chip having a Full Width at Half Maximum (FWHM) less than or equal to about 40 nm;

the second phosphor has a chemical formula of A 2 MF 6 :Mn 4+ , A is one of Li, Na, K, Rb, Ce, and NH 4 , and M is one of Si, Ti, Nb, and Ta; and

Mn 4+ of the second phosphor has a mole range of about 0.02 to about 0.035 times the M.

2. The light-emitting diode package of claim 1 , wherein:

the white light has an x color coordinate and a y color coordinate forming a point present in a region on an International Commission on Illumination (CIE) chromaticity diagram; and

the x color coordinate is about 0.25 to about 0.32 and the y color coordinate is about 0.22 to about 0.32.

3. The light-emitting diode package of claim 1 , wherein a change rate of a light emitting intensity of the white light is about 5% or less.

4. The light-emitting diode package of claim 1 , wherein a size of a peak wavelength of the green light is about 20% to about 35% a peak wavelength of the red light.

5. The light-emitting diode package of claim 1 , wherein the white light has national television system committee National Television System Committee (NTSC) color saturation which is more than or equal to about 85%.

6. A light-emitting diode package, comprising:

a light-emitting diode chip disposed in a housing;

a first phosphor configured to emit green light; and

a second phosphor configured to emit red light,

wherein:

the light-emitting diode chip comprises at least one of a blue light-emitting diode chip having a Full Width at Half Maximum (FWHM) less than or equal to about 40 nm;

the second phosphor is a nitride-based phosphor and includes at least one of MSiN 2 , MSiON 2 , and M 2 Si 5 N 8 and M is one of Ca, Sr, Ba, Zn, Mg, and Eu; and

a white light is configured to be formed by a synthesis of light emitted from the light-emitting diode chip, the first phosphor, and the second phosphor.

7. The light-emitting diode package of claim 6 , wherein the first phosphor comprises at least one of a Ba—Al—Mg (BAM)-based phosphor, a quantum dot phosphor, a silicate-based phosphor, a beta-SiAION-based phosphor, a Garnet-based phosphor, and an LSN-based phosphor.

8. The light-emitting diode package of claim 6 , wherein the light-emitting diode chip further comprises an ultraviolet light-emitting diode chip.

9. The light-emitting diode package of claim 6 , wherein a peak wavelength of the green light of the first phosphor comprises a range from about 520 nm to 570 nm, and

wherein a peak wavelength of the red light of the second phosphor comprises a range from about 610 nm to about 650 nm.

10. A light-emitting diode package, comprising:

a light-emitting diode chip disposed in a housing;

a first phosphor configured to emit green light;

a second phosphor configured to emit red light;

a third phosphor configured to emit red light; and

wherein:

the first, second, and third phosphors are disposed in a molding part;

the light-emitting diode chip comprises at least one of a blue light-emitting diode chip having a Full Width at Half Maximum (FWHM) less than or equal to about 40 nm;

one of the red light phosphors is a nitride-based phosphor and includes at least one of MSiN 2 , MSiON 2 , and M 2 Si 5 N 5 and M is one of Ca, Sr, Ba, Zn, Mg, and Eu;

the red light of the second phosphor and the red light of the third phosphor have different peak wavelengths in which one of peak wavelength of the red light phosphor comprises a range from about 610 nm to about 650 nm and the other peak wavelength of the red light phosphor comprises a range from about 600 nm to 670 nm, and

a white light is configured to be formed by a synthesis of light emitted from the light-emitting diode chip, the first phosphor, and the second phosphor.

11. The light-emitting diode package of claim 10 , wherein the housing includes a top surface opposite a bottom surface and the top surface of the housing includes a lower portion, an upper portion and an intermediate portion between the lower portion and the upper portion; and the light-emitting diode chip, the first phosphor, the second phosphor, the third phosphor and the molding part are disposed on the lower portion and the intermediate portion of the top surface of the housing.

12. The light-emitting diode package of claim 10 , wherein the housing further comprises a reflector disposed on a side of the housing and being spaced apart from the LED light-emitting diode chip.

13. The light-emitting diode package of claim 10 , wherein the first phosphor comprises at least one of a Ba—Al—Mg (BAM)-based phosphor, a quantum dot phosphor, a silicate-based phosphor, a beta-SiAION-based phosphor, a Garnet-based phosphor, and an LSN-based phosphor.

14. The light-emitting diode package of claim 10 , wherein the second phosphor is a fluoride-based phosphor and the third phosphor is a nitride-based phosphor.

15. The light-emitting diode package of claim 14 , wherein the third phosphor has a mass range of about 0.1 wt % to about 10 wt % with respect to the second phosphor.

16. The light-emitting diode package of claim 15 , wherein the fluoride-based phosphor has a chemical formula of A 2 MF 6 :Mn 4+ , A is one of Li, Na, K, Rb, Ce, and NH 4 , and M is one of Si, Ti, Nb, and Ta.

17. The light-emitting diode package of claim 16 , wherein the Mn 4+ of the fluoride-based phosphor has a mole range of about 0.02 to about 0.035 times the M.