IP Library Granted Patent US 11,362,220
Granted Patent B2
US 11,362,220 · App. 16/376,802 · Granted Jun 14, 2022

Local metallization for semiconductor substrates using a laser beam

Inventors: Pei Hsuan Lu (San Jose, CA); Benjamin I. Hsia (Fremont, CA); David Aaron R. Barkhouse (Oakland, CA); Lee Gorny (Mountain View, CA)
Assignee: SunPower Corporation
H01L31/02008H01L31/03682H01L31/1804H01L31/186
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Quick Facts
Patent No.
US 11,362,220
App. No.
16/376,802
Granted
Jun 14, 2022
Kind
B2
Abstract

Local metallization of semiconductor substrates using a laser beam, and the resulting structures, e.g., micro-electronic devices, semiconductor substrates and/or solar cells, are described. For example, a solar cell includes a substrate and a plurality of semiconductor regions disposed in or above the substrate. A plurality of conductive contact structures is electrically connected to the plurality of semiconductor regions. Each conductive contact structure includes a locally deposited metal portion disposed in contact with a corresponding a semiconductor region.

Claims (10)

1. A method of fabricating a solar cell, the method comprising:

providing a substrate with an intervening layer thereon, the intervening layer including pre-formed openings to expose portions of the substrate;

locating a metal foil over the openings in the intervening layer; and

exposing the metal foil to a laser beam to form a conductive contact structure electrically connected to the substrate via the openings in the intervening layer, wherein the conductive contact structure includes a locally deposited metal portion of the metal foil, the locally deposited metal portion connected to an unexposed portion of the metal foil by a weakened structure of the metal foil, the weakened structure of the metal foil including patterning, subsequent to the exposing the metal foil to the laser beam, removing at least a portion of the metal foil not exposed to the laser beam, and to leave remaining the weakened structure of the metal foil including the patterning,

wherein the substrate comprises a plurality of N-type and P-type semiconductor regions, and wherein the openings in the intervening layer expose portions of the plurality of N-type and P-type semiconductor regions.

2. The method of claim 1 , wherein the locating the metal foil comprises locating a continuous sheet of the metal foil.

3. The method of claim 1 , wherein the removing at least a portion of the metal foil not exposed to the laser beam comprises forming an edge feature at an edge of the conductive contact structures.

4. The method of claim 1 , wherein the exposing the metal foil to the laser beam forms a spatter feature.

5. The method of claim 4 , further comprising removing the spatter feature.

6. The method of claim 1 , wherein the patterning includes perforation.

Assignments (5)
SECURITY INTEREST Recorded Jun 27, 2024
From: MAXEON SOLAR PTE. LTD.
To: DB TRUSTEES (HONG KONG) LIMITED
Reel/Frame 067924/0062 →
SECOND LIEN SECURITY INTEREST AGREEMENT Recorded Jun 26, 2024
From: MAXEON SOLAR PTE. LTD
To: DB TRUSTEES (HONG KONG) LIMITED
Reel/Frame 071343/0553 →
SECURITY INTEREST Recorded Jun 5, 2024
From: MAXEON SOLAR PTE. LTD.
To: DB TRUSTEES (HONG KONG) LIMITED
Reel/Frame 067637/0598 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 24, 2023
From: SUNPOWER CORPORATION
To: MAXEON SOLAR PTE. LTD.
Reel/Frame 062699/0875 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 28, 2019
From: LU, PEI HSUAN; HSIA, BENJAMIN I.; BARKHOUSE, DAVID AARON R.; GORNY, LEE
To: SUNPOWER CORPORATION
Reel/Frame 049626/0801 →