Integrated high voltage capacitor
A semiconductor device comprises a semiconductor die and an integrated capacitor formed over the semiconductor die. The integrated capacitor is configured to receive a high voltage signal. A transimpedance amplifier is formed in the semiconductor die. An avalanche photodiode is disposed over or adjacent to the semiconductor die. The integrated capacitor is coupled between the avalanche photodiode and a ground node. A resistor is coupled between a high voltage input and the avalanche photodiode. The resistor is an integrated passive device (IPD) formed over the semiconductor die. A first terminal of the integrated capacitor is coupled to a ground voltage node. A second terminal of the integrated capacitor is coupled to a voltage greater than 20 volts. The integrated capacitor comprises a plurality of interdigitated fingers in one embodiment. In another embodiment, the integrated capacitor comprises a plurality of vertically aligned plates.
1. A method of making an avalanche photodiode (APD)-based optical receiver with an integrated high-voltage radio frequency (RF) filter, comprising:
providing a semiconductor die including a transimpedance amplifier;
forming an integrated capacitor on the semiconductor die directly over and within a footprint of the transimpedance amplifier, wherein the integrated capacitor includes,
a first bus bar, wherein the first bus bar is electrically isolated from all components formed in the semiconductor die,
a first plurality of fingers extending from the first bus bar,
a second bus bar,
a second plurality of fingers extending from the second bus bar, wherein the second plurality of fingers is interleaved with the first plurality of fingers within a first conductive layer with a horizontal spacing of approximately 0.3 micrometers (μm) between individual fingers of the first plurality of fingers and second plurality of fingers,
a third bus bar formed over the first bus bar,
a third plurality of fingers extending from the third bus bar, wherein each finger of the third plurality of fingers is aligned directly over a respective finger of the first plurality of fingers,
a fourth bus bar formed over the second bus bar,
a fourth plurality of fingers extending from the fourth bus bar, wherein each finger of the fourth plurality of fingers is aligned directly over a respective finger of the second plurality of fingers,
a first conductive via extending from the first bus bar to the third bus bar, and
a second conductive via extending from the second bus bar to the fourth bus bar;
forming an integrated resistor over the semiconductor die, wherein the integrated resistor and integrated capacitor form a radio frequency (RF) filter;
disposing the semiconductor die into a can-shaped package;
disposing an avalanche photodiode (APD) on the semiconductor die with a cathode of the APD coupled to a circuit node between the integrated capacitor and the integrated resistor;
disposing a lens in an opening of the can-shaped package, wherein the can-shaped package is adapted to guide a fiber-optic signal through the lens and onto the APD; and
coupling the circuit node to a high voltage input of the semiconductor device, wherein the high voltage input is configured to accept a voltage of between 60 and 90 volts.
2. The method of claim 1 , further including patterning the first conductive layer to include a guard ring around the first bus bar, second bus bar, first plurality of fingers, and second plurality of fingers.
3. The method of claim 1 , further including:
providing a contact pad coupled to the integrated capacitor;
forming an insulating layer over the contact pad;
forming an opening in the insulating layer over the contact pad; and
disposing the avalanche photodiode over the opening with a conductive material between the contact pad and photodiode.
4. The method of claim 3 , further including forming a bond wire from the avalanche photodiode to the semiconductor die.
5. A method of making an optical receiver, comprising:
providing a semiconductor die including a transimpedance amplifier;
forming an integrated capacitor over the semiconductor die, wherein the integrated capacitor includes a plurality of interdigitated fingers with a finger spacing of 0.3 μm or greater between individual fingers of the plurality of interdigitated fingers;
forming an integrated resistor over the semiconductor die, wherein the integrated resistor and integrated capacitor form a radio frequency (RF) filter;
disposing the semiconductor die into a can-shaped package;
disposing an avalanche photodiode (APD) over the semiconductor die with a cathode of the APD coupled to a circuit node between the integrated capacitor and the integrated resistor and an anode of the APD coupled to the transimpedance amplifier;
disposing a lens in an opening of the can-shaped package, wherein the can-shaped package is adapted to guide a fiber-optic signal through the lens and onto the APD; and
coupling the circuit node to a high voltage node, wherein the high voltage node is configured to operate at a voltage of 35 volts or more.
6. The method of claim 5 , further including depositing a conductive epoxy between the avalanche photodiode and the semiconductor die.
7. The method of claim 5 , wherein the plurality of interdigitated fingers are vertically aligned with each other by common polarity.
8. The method of claim 7 , further including a plurality of conductive vias disposed between the plurality of interdigitated fingers.
9. The method of claim 5 , further including forming a guard ring around the integrated capacitor.
10. The method of claim 5 , wherein the integrated capacitor includes a first terminal that is electrically isolated from all components formed in the semiconductor die.
11. A method of making a semiconductor device, comprising:
providing a semiconductor die comprising a transimpedance amplifier;
forming a high voltage integrated capacitor on the semiconductor die, wherein the high voltage integrated capacitor includes a plurality of interdigitated fingers with a finger spacing of 0.3 μm or greater between individual fingers of the plurality of interdigitated fingers;
forming an integrated resistor over the semiconductor die, wherein the integrated resistor and the high voltage integrated capacitor form a radio frequency (RF) filter; and
disposing an avalanche photodiode (APD) over the semiconductor die with a cathode of the APD coupled to a circuit node between the high voltage integrated capacitor and the integrated resistor and an anode of the APD coupled to the transimpedance amplifier.
12. The method of claim 11 , further including forming the high voltage integrated capacitor by forming a first conductive layer comprising a first portion of the plurality of interdigitated fingers.
13. The method of claim 12 , further including forming the high voltage integrated capacitor by forming a second conductive layer comprising a second portion of the plurality of interdigitated fingers over the first conductive layer.
14. The method of claim 13 , further including forming the high voltage integrated capacitor by forming a conductive via between a first finger of the first portion of the plurality of interdigitated fingers and a second finger of the second portion of the plurality of interdigitated fingers.
15. The method of claim 11 , further including coupling the high voltage integrated capacitor to receive a high voltage signal through the integrated resistor, wherein the high voltage signal is between 60 and 90 volts.
16. The method of claim 11 , further including depositing a conductive epoxy or solder between the semiconductor die and avalanche photodiode.
17. The method of claim 11 , wherein the integrated capacitor includes a first terminal that is electrically isolated from all components formed in the semiconductor die.