Local patterning and metallization of semiconductor structures using a laser beam

1. A method of fabricating a solar cell, the method comprising:

providing a substrate having a continuous intervening layer thereon;

locating a metal foil over the intervening layer; and exposing the metal foil to a laser beam to form a conductive path by diffusing metal from the metal foil into the intervening layer and to form a conductive contact structure electrically connected to the substrate via the conductive path, wherein the conductive contact structure includes a locally deposited metal portion of the metal foil, the locally deposited metal portion connected to an unexposed portion of the metal foil by a weakened structure of the metal foil, the weakened structure of the metal foil including patterning, subsequent to exposing the metal foil to the laser beam, separating and removing the unexposed portion of the metal foil by separating the unexposed portion of the metal foil from the locally deposited metal portion along the weakened structure and to leave remaining the weakened structure of the metal foil including the patterning.

2. The method of claim 1 , wherein exposing the metal foil to the laser beam comprises using a pulse energy in the range of 200-350 microJoules.

3. The method of claim 1 , wherein exposing the metal foil to the laser beam comprises using a pulse duration in the range of 10 picoseconds-200 nanoseconds.

4. The method of claim 1 , wherein locating the metal foil over the substrate comprises locating a continuous sheet of the metal foil over the substrate.

5. The method of claim 1 , wherein the substrate comprises a plurality of alternating N-type and P-type semiconductor regions.

6. The method of claim 1 , further comprising:

forming a plurality of semiconductor regions in or above the substrate.

7. The method of claim 1 , wherein:

the exposing the metal foil to a laser beam forms the conductive contact structure by diffusing atoms of the metal foil into the substrate.

8. The method of claim 7 , wherein exposing the metal foil to the laser beam comprises using a pulse energy in the range of 200-300 microJoules.

9. The method of claim 7 , wherein exposing the metal foil to the laser beam comprises using a pulse duration in the range of 1 nanosecond to 1 millisecond.

10. The method of claim 1 , wherein:

the intervening layer includes an amorphous semiconductor layer, and

the exposing the metal foil to the laser beam crystallizes a portion of the amorphous semiconductor layer.

11. The method of claim 10 , wherein exposing the metal foil to the laser beam comprises using a pulse energy in the range of 200-300 microJoules.

12. The method of claim 10 , wherein exposing the metal foil to the laser beam comprises using a pulse duration in the range of 10-200 nanoseconds.

13. A solar cell, comprising:

a substrate including a semiconductor region;

a continuous intervening layer on the semiconductor region, wherein the intervening layer includes a dielectric including a conductive path to electrically connect to a portion of the semiconductor region, whereby the conductive path includes metal from a metal foil diffused into the intervening layer; and

a conductive contact structure electrically connected to the semiconductor region through the intervening layer via the conductive path without passing through a contact hole previously formed in the intervening layer, the conductive contact structure having a locally deposited metal portion, the locally deposited metal portion connected to a portion of the metal foil by a weakened structure of the metal foil, the weakened structure of the metal foil including patterning.

14. The method of claim 1 , wherein the patterning includes perforation.

15. The solar cell of claim 13 , wherein the patterning includes perforation.