Apparatus and Method for Controlling Ion Energy Distribution in Process Plasmas
Multiple harmonic frequency components are used for plasma excitation in a plasma process. Relative amplitude and/or phase shift between the different frequency components is controlled so as to provide desired ion energy plasma properties. The relative amplitude and/or phase shift may be controlled without direct and/or manual ion energy measurements. Rather, the ion energy within the plasma may be dynamically controlled by monitoring one or more electrical characteristics within the plasma apparatus, such as for example, impedance levels, electrical signals in the radio frequency (RF) generator, electrical signals in a the matching networks, and electrical signals in other circuits of the plasma processing apparatus. The monitoring and control of the ion energy may be accomplished dynamically during the plasma process so as to maintain a desired ion energy distribution.
1 . A plasma processing system capable of plasma processing a substrate, comprising:
a process chamber;
one or more RF sources, the one or more RF sources coupled to the process chamber and configured to provide RF power to the process chamber through at least a base frequency voltage at a base frequency and a second frequency voltage at a second frequency, the second frequency being a second harmonic frequency or higher harmonic of the base frequency;
control circuitry, the control circuitry coupled to at least one other component of the plasma processing system to receive at least one electrical characteristic of the plasma processing system during plasma processing of the substrate; and
at least one output of the control circuitry coupled to the at least one of the one or more RF sources, the one or more RF sources configured to adjust a characteristic of the base frequency voltage and/or the second frequency voltage so as to be capable of obtaining a desired ion energy distribution during plasma processing of the substrate.
2 . The plasma processing system of claim 1 , wherein the characteristic of the base frequency voltage and/or a second frequency voltage is a phase difference between the base frequency voltage and the second frequency voltage and/or an amplitude ratio of the base frequency voltage and the second frequency voltage.
3 . The plasma processing system of claim 2 , wherein the at least one electrical characteristic of the plasma processing system comprises an impedance of the process chamber.
4 . The plasma processing system of claim 3 , wherein the other component of the plasma processing system is a matching network coupled between the process chamber and the one or more RF sources.
5 . The plasma processing system of claim 1 , wherein the at least one electrical characteristic of the plasma processing system comprises an impedance of the process chamber.
6 . The plasma processing system of claim 1 , wherein the one or more RF sources is a single RF source that provides RF voltages at two or more frequencies, the two or more frequencies comprising the base frequency and the second frequency.
7 . The plasma processing system of claim 1 , wherein the second frequency is the second harmonic frequency of the base frequency.
8 . The plasma processing system of claim 1 , wherein the electrical characteristic of the base frequency voltage and/or a second frequency voltage is a phase difference between the base frequency voltage and the second frequency voltage.
9 . The plasma processing system of claim 1 , wherein the control circuitry is a feedback circuit coupled between the other component and the one or more RF sources.
10 . The plasma processing system of claim 1 , wherein the control circuitry is a control unit of the plasma processing system.
11 . The plasma processing system of claim 1 , wherein the one or more RF sources comprise a lower RF source.
12 . A method for plasma processing a substrate, comprising:
providing a process chamber;
coupling one or more RF sources to the process chamber to provide RF power to the process chamber through at least a base frequency voltage at a base frequency and a second frequency voltage at a second frequency, the second frequency being a second harmonic frequency or higher harmonic of the base frequency;
monitoring at least one electrical characteristic of a plasma processing system during plasma processing of the substrate; and
adjusting, during the plasma processing, a phase difference between the base frequency voltage and the second frequency voltage and/or an amplitude ratio of the base frequency voltage and the second frequency voltage so as to obtain a desired ion energy distribution during plasma processing of the substrate.
13 . The method of claim 12 , wherein the at least one electrical characteristic of the plasma processing system comprises an impedance of the process chamber.
14 . The method of claim 13 , wherein a matching network is coupled between the process chamber and the one or more RF sources.
15 . The method of claim 12 , wherein the adjusting comprises adjusting the phase difference between the base frequency voltage and the second frequency voltage.
16 . The method of claim 12 , wherein the plasma processing is plasma etch process and the adjusting changes an etch characteristic of the plasma etch process.
17 . A method for plasma processing a substrate, comprising:
providing a process chamber;
coupling one or more RF sources to the process chamber to provide RF power to the process chamber through at least a base frequency voltage at a base frequency and a second frequency voltage at a second frequency, the second frequency being a second harmonic frequency or higher harmonic of the base frequency;
coupling a matching network between the process chamber and the one or more RF sources;
monitoring at least an impedance of the process chamber as seen by the matching network during plasma processing of the substrate; and
adjusting, during the plasma processing, at least a phase difference between the base frequency voltage and the second frequency voltage so as to obtain a desired ion energy distribution during plasma processing of the substrate.
18 . The method of claim 17 , wherein the one or more RF sources comprise a one or more lower RF sources.
19 . The method of claim 17 , wherein the second frequency is the second harmonic frequency of the base frequency.
20 . The method of claim 17 , wherein the plasma processing is plasma etch process and the adjusting changes an etch characteristic of the plasma etch process.