Image sensors with reduced noise
An image senor may include an array of pixels controlled by row control circuitry. Each pixel may include a photodiode for generating image signals and a charge storage structure coupled to a floating diffusion region and configured to generate and store parasitic light noise level signals. The image signals and the parasitic light noise level signals may be read out in the same readout cycle using shared or separate readout circuitry. Processing circuitry may selectively process the image signals based on the parasitic light noise level signals to generate image signals with reduced noise.
1. An image sensor, comprising:
an array of image pixels, wherein an image pixel in the array includes:
a photosensitive element coupled to a floating diffusion region via a first path and operable to generate an image level signal, and
a charge storage structure coupled to the floating diffusion region via a second path and operable to generate a parasitic light noise level signal;
control circuitry operable to perform a readout operation on the image level signal and a readout operation on the parasitic light noise level signal; and
processing circuitry operable to perform a subtraction operation based on the image level signal and the parasitic light noise level signal, wherein the processing circuitry is operable to perform the subtraction operation based on whether the parasitic light noise level signal is greater than a parasitic light noise signal threshold level or based on whether the image level signal is less than an image signal threshold level.
2. The image sensor defined in claim 1 , wherein the processing circuitry is operable to subtract a modified version of the parasitic light noise level signal from the image level signal to generate a reduced noise signal for forming an image frame.
3. The image sensor defined in claim 1 , wherein the charge storage structure comprises a storage diode coupled to the floating diffusion region via a first transistor, the floating diffusion region is coupled to a power supply terminal via a second transistor, and the storage diode is electrically disconnected from the power supply terminal by a capacitor.
4. The image sensor defined in claim 3 , wherein the storage diode is operable to store a low conversion gain signal in a low conversion gain mode of operation.
5. The image sensor defined in claim 3 , wherein the image pixel includes an additional charge storage structure interposed between the photosensitive element and the floating diffusion region.
6. The image sensor defined in claim 3 , wherein the floating diffusion region is interposed between the photosensitive element and the storage diode.
7. The image sensor defined in claim 1 , wherein the array of image pixels is arranged in rows and columns, the control circuitry is operable to perform readout operations for image level signals and parasitic light noise level signals for a given row prior to performing readout operations for image level signals and parasitic light noise level signals for a subsequent row.
8. The image sensor defined in claim 1 , wherein the processing circuitry is operable to perform motion detection based on a comparison between the image level signal and the parasitic light noise level signal.
9. An image sensor, comprising:
image pixels arranged in rows and columns, wherein each image pixel in the image pixels includes:
a photosensitive element coupled to a floating diffusion region via a first path and configured to generate an image signal, and
a charge storage structure coupled to the floating diffusion region via a second path and configured to generate a parasitic light signal that is representative of an amount of parasitic light noise at the floating diffusion region, wherein the first path is separate from the second path; and
control circuitry configured to assert a first global control signal for the image pixels to begin generating the image signals, to control the image pixels to begin generating the parasitic light signals, and to perform readout operations in a row-by-row manner on sets of the image signals and the parasitic light signals, each set corresponding to the image signals and the parasitic light signals for a row of image pixels in the rows of image pixels.
10. The image sensor defined in claim 9 , wherein each image pixel comprises a transistor coupling the photosensitive element to a charge storage region and the control circuitry is configured to assert a second global control signal controlling the transistor to transfer the image signal to the charge storage region.
11. The image sensor defined in claim 10 , wherein the control circuitry is configured to transfer the parasitic light signal to the floating diffusion region in a row-by-row manner.
12. The image sensor defined in claim 9 , wherein the control circuitry is configured to assert a set of control signals in a row-by-row manner to control the image pixels to begin generating the parasitic light signals.
13. The image sensor defined in claim 9 , wherein the control circuitry is configured to assert a second global control signal to control the image signals to begin generating the parasitic light signals.
14. The image sensor defined in claim 9 , wherein a first set of transistors is coupled to the photosensitive element and operable to read out the image signal, a second set of transistors is coupled to the charge storage structure and operable to read out the parasitic light signal, and the first set of transistors is different from the second set of transistors.
15. The image sensor defined in claim 14 , wherein the second set of transistors is coupled to and shared between two or more corresponding image pixels.
16. An image sensor, comprising:
an array of image pixels, wherein an image pixel in the array includes:
a photosensitive element coupled to a floating diffusion region via a first path and operable to generate an image level signal, and
a charge storage structure coupled to the floating diffusion region via a first transistor in a second path, operable to generate a parasitic light noise level signal in a parasitic light collection mode of operation, and operable to store a low conversion gain signal in a low conversion gain mode of operation, wherein the first path is separate from the second path, and the floating diffusion region is coupled to a power supply terminal via a second transistor; and
readout circuitry operable to perform readout operations on the image level signal and the parasitic light noise level signal.
17. The image sensor defined in claim 16 , further comprising:
processing circuitry operable to perform a linear combination operation based on the image level signal and the parasitic light noise level signal.
18. The image sensor defined in claim 16 , wherein the charge storage structure comprises a storage diode electrically disconnected from the power supply terminal.