Replacement metal gate structures
Replacement metal gate structures with improved chamfered workfunction metal and self-aligned contact and methods of manufacture are provided. The method includes forming a replacement metal gate structure in a dielectric material. The replacement metal gate structure is formed with a lower spacer and an upper spacer above the lower spacer. The upper spacer having material is different than material of the lower spacer. The method further includes forming a self-aligned contact adjacent to the replacement metal gate structure by patterning an opening within the dielectric material and filling the opening with contact material. The upper spacer prevents shorting with the contact material.
1. A method, comprising:
forming a replacement gate structure composed of a gate dielectric material, a workfunction material, spacers, wherein the forming of the replacement gate structure comprises:
removing portions of the gate dielectric material and the workfunction material to form a space;
depositing a spacer material on the spacers which are on sidewalls of a dielectric material; and
chamfering the spacer material.
2. The method of claim 1 , wherein the removing portions of the gate dielectric material and the workfunction material includes laterally removing the portions of the gate dielectric material and the workfunction material.
3. The method of claim 1 , further comprising filling the space with a metal material.
4. The method of claim 3 , further comprising forming a cap layer in the metal material.
5. The method of claim 1 , further comprising forming a self-aligned contact adjacent to the replacement gate structure.
6. The method of claim 5 , wherein the self-aligned contact is formed by patterning an opening within the dielectric material and a second dielectric material over the replacement gate structure and filling the opening with a contact material.
7. The method of claim 6 , wherein the spacer material is resistive to a self-aligned contact etching process.
8. The method of claim 1 , wherein the spacer material comprises a material different than a material of the spacers.
9. A method, comprising:
forming spacers within an opening of an interlevel dielectric;
depositing a gate dielectric material over the spacers;
depositing a workfunction material on the gate dielectric material;
depositing a metal material over the gate dielectric material and the workfunction material to form a replacement gate structure;
depositing a spacer material on the spacers; and
chamfering the spacer material.
10. The method of claim 9 , further comprising forming a self-aligned contact to the replacement gate structure.
11. The method of claim 10 , wherein the self-aligned contact is formed by patterning an opening within a dielectric material over the replacement gate structure and filling the opening with a contact material.
12. The method of claim 9 , wherein the spacers are lower spacers and the spacer material are upper spacers above the lower spacers.
13. The method of claim 12 , wherein the upper spacers are resistive to a self-aligned contact etching process.
14. The method of claim 9 , further comprising removing portions of the gate dielectric material and the workfunction material prior to depositing the metal material over the gate dielectric material and the workfunction material to form the replacement gate structure.