IP Library Granted Patent US 11,583,928
Granted Patent B2
US 11,583,928 · App. 16/385,177 · Granted Feb 21, 2023

Additive manufacturing based multi-layer fabrication/repair

Inventors: Ranadip Acharya (Rocky Hill, CT); Vijay Narayan Jagdale (South Windsor, CT)
Assignee: Raytheon Technologies Corporation
B22F10/20B22F5/009B22F5/04B29C64/386G06F30/20B33Y10/00B33Y30/00B33Y50/02B33Y80/00G06F2119/18
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Quick Facts
Patent No.
US 11,583,928
App. No.
16/385,177
Granted
Feb 21, 2023
Kind
B2
Abstract

A method of additively manufacturing includes generating a thermal model driven scan map that identifies an equiaxed cap region, a single crystal (SX) region, and a columnar to equiaxed transition (CET) region; and forming an active melt pool with respect to the thermal model driven scan map such that a depth of the active melt pool is greater than a thickness of the equiaxed transition (CET) region.

Claims (19)

1. A method of additively manufacturing, comprising:

generating a thermal model driven scan map;

maintaining an active melt pool of an active melt pool scan pattern with respect to the thermal model driven scan map such that a depth of the active melt pool is greater than a thickness of a columnar to equiaxed transition (CET) region;

restricting a scan rotation to zero and unidirectional movement of the active melt pool scan pattern to assure columnar single crystal (SX) growth;

utilizing the thermal model driven scan map to model residual stress to simulate and prevent residual stress and a propensity of hot cracking; and

utilizing the thermal model driven scan map to define a morphology, wherein the morphology includes a directionally solidified (DS) microstructure; wherein the thermal model driven scan map identifies the columnar to equiaxed transition (CET) region.

2. The method as recited in claim 1 , further comprising initiating formation of the active melt pool in a cast single crystal (SX) baseplate.

3. The method as recited in claim 1 , further comprising maintaining the active melt pool of the active melt pool scan pattern with a lesser power than a conventional melt pool of a conventional scan pattern.

4. The method as recited in claim 3 , further comprising arranging the active melt pool scan pattern with a closer line spacing and higher velocity than the conventional scan pattern.

5. A method of additively manufacturing, comprising:

locating a cast single crystal (SX) baseplate in an additively manufacturing machine;

initiating formation of an active melt pool in the cast single crystal (SX) baseplate via an active melt pool scan pattern;

generating a thermal model driven scan map that identifies an equiaxed cap region, a single crystal (SX) region, and a columnar to equiaxed transition (CET) region;

maintaining the active melt pool with the active melt pool scan pattern in accords with the thermal model driven scan map such that a depth of the active melt pool is greater than a thickness of a columnar to equiaxed transition (CET) region;

restricting a scan rotation to zero and unidirectional movement of the active melt pool scan pattern to assure columnar single crystal (SX) growth;

utilizing the thermal model driven scan map to model residual stress to simulate and prevent residual stress and a propensity of hot cracking; and

utilizing the thermal model driven scan map to define a morphology, wherein the morphology includes a directionally solidified (DS) microstructure.

6. The method as recited in claim 5 , further comprising maintaining the active melt pool of the active melt pool scan pattern with a lesser power than a conventional melt pool of a conventional scan pattern.

7. The method as recited in claim 6 , further comprising arranging the active melt pool scan pattern with a closer line spacing and higher velocity than the conventional scan pattern.

Assignments (4)
CHANGE OF NAME Recorded Jul 27, 2023
From: RAYTHEON TECHNOLOGIES CORPORATION
To: RTX CORPORATION
Reel/Frame 064714/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE SPELLING ON THE ADDRESS 10 FARM SPRINGD ROAD FARMINGTONCONNECTICUT 06032 PREVIOUSLY RECORDED ON REEL 057190 FRAME 0719. ASSIGNOR(S) HEREBY CONFIRMS THE CORRECT SPELLING OF THE ADDRESS 10 FARM SPRINGS ROAD FARMINGTON CONNECTICUT 06032. Recorded Aug 19, 2021
From: UNITED TECHNOLOGIES CORPORATION
To: RAYTHEON TECHNOLOGIES CORPORATION
Reel/Frame 057226/0390 →
CHANGE OF NAME Recorded Aug 16, 2021
From: UNITED TECHNOLOGIES CORPORATION
To: RAYTHEON TECHNOLOGIES CORPORATION
Reel/Frame 057190/0719 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 16, 2019
From: ACHARYA, RANADIP; JAGDALE, VIJAY NARAYAN
To: UNITED TECHNOLOGIES CORPORATION
Reel/Frame 048893/0377 →