Compositions and Methods Using Same for Deposition of Silicon-Containing Films
Described herein are methods and compositions for forming a silicon-containing film or material such as without limitation a silicon oxide, silicon nitride, silicon oxynitride, a carbon-doped silicon nitride, or a carbon-doped silicon oxide film in a semiconductor deposition process, such as without limitation, a plasma enhanced atomic layer deposition of silicon-containing film.
1 . A method for depositing a silicon nitride film on at least a portion of a surface of a substrate, the method comprising:
placing the substrate into a reactor;
introducing into the reactor an at least one silicon precursor compound having the following Formulae IIA through IID:
wherein R is selected from the group consisting of hydrogen, a halide atom, a linear C 1 to C 10 alkyl group, a branched C 3 to C 10 alkyl group, a linear or branched C 3 to C 12 alkenyl group, a linear or branched C 3 to C 12 alkenyl group, a linear or branched C 3 to C 12 alkynyl group, a C 4 to C 10 cyclic alkyl group, and a C 6 to C 10 aryl group under conditions sufficient to provide a chemisorbed layer, wherein the silicon precursor contains less than about 100 ppm of halide ions;
c. purging the reactor with a purge gas;
d. introducing a plasma source comprising nitrogen into the reactor to react with at least a portion of the chemisorbed layer; and
e. optionally purge the reactor with an inert gas; and wherein the steps b through e are repeated until a desired thickness of the silicon nitride film is obtained.
2 . The method of claim 1 wherein the plasma source is selected from the group consisting of nitrogen plasma, nitrogen/helium plasma, nitrogen/argon plasma, ammonia plasma, ammonia/helium plasma, ammonia/argon/plasma, helium plasma, argon plasma, hydrogen plasma, hydrogen/helium plasma, hydrogen/argon plasma, organic amine plasma, and mixtures thereof.
3 . The method of claim 1 wherein the at least one silicon precursor compound comprises bis(disilylamino)silane.
4 . The method of claim 3 , wherein the halide ions comprise chloride ions.
5 . The method of claim 3 , wherein the chloride ions, if present, are present at a concentration of 50 ppm or less.
6 . The method of claim 3 , wherein the chloride ions, if present, are present at a concentration of 10 ppm or less.
7 . The method of claim 3 , wherein the chloride ions, if present, are present at a concentration of 5 ppm or less.
8 . The method of claim 3 , wherein the composition is free of chloride ions.
9 . The method of claim 1 wherein the plasma in step d is generated at a power density ranging from about 0.01 to about 1.5 W/cm 2 .
10 . The method of claim 1 wherein the silicon nitride has a reflective index of 2.0.
11 . A composition for depositing a silicon nitride or silicon oxide film, the composition comprising:
at least one silicon precursor compound having the following Formulae IIA and/or IIB:
wherein R is selected from the group consisting of hydrogen, a halide atom, a linear C 1 to C 10 alkyl group, a branched C 3 to C 10 alkyl group, a linear or branched C 3 to C 12 alkenyl group, a linear or branched C 3 to C 12 alkenyl group, a linear or branched C 3 to C 12 alkynyl group, a C 4 to C 10 cyclic alkyl group, and a C 6 to C 10 aryl group, wherein the silicon precursor comprises less than about 100 ppm of halides.
12 . The composition of claim 11 , wherein the halides comprise chloride ions.
13 . The composition of claim 11 , wherein the chloride ions, if present, are present at a concentration of 50 ppm or less.
14 . The composition of claim 11 , wherein the chloride ions, if present, are present at a concentration of 10 ppm or less.
15 . The composition of claim 11 , wherein the chloride ions, if present, are present at a concentration of 5 ppm or less.
16 . The composition of claim 11 , wherein the composition is free of chloride ions.
17 . The composition of claim 11 wherein the at least one silicon precursor compound comprises bis(disilylamino)silane.
18 . The composition of claim 17 , wherein the chloride ions, if present, are present at a concentration of 50 ppm or less.
19 . The composition of claim 17 , wherein the chloride ions, if present, are present at a concentration of 10 ppm or less.
20 . The composition of claim 17 , wherein the chloride ions, if present, are present at a concentration of 5 ppm or less.
21 . The composition of claim 17 , wherein the composition is free of chloride ions.