Resonator shapes for bulk acoustic wave (BAW) devices
A resonator circuit device. The present invention provides for improved resonator shapes using egg-shaped, partial egg-shaped, and asymmetrical partial egg-shaped resonator structures. These resonator shapes are configured to give less spurious mode/noise below the resonant frequency (F s ) than rectangular, circular, and elliptical resonator shapes. These improved resonator shapes also provide filter layout flexibility, which allows for more compact resonator devices compared to resonator devices using conventionally shaped resonators.
1. A resonator circuit device comprising:
a top electrode;
a piezoelectric layer; and
a bottom electrode;
wherein the top electrode, the piezoelectric layer, and the bottom electrode are characterized by an egg shape with only a single axis of symmetry, the egg shape including a first half characterized by a tapered elongated or flattened oval end and a second half characterized by a non-tapered substantially circular shape end.
2. The device of claim 1 wherein the top electrode and bottom electrode include molybdenum (Mo), ruthenium (Ru), tungsten (W), or aluminum-copper (AlCu).
3. The device of claim 1 wherein the piezoelectric layer includes materials or alloys having at least one of the following: AlN, AlGaN, GaN, InN, InGaN, AlInN, AlInGaN, ScAlN, ScGaN, AlScYN, and BN.
4. A resonator circuit device comprising:
a top electrode;
a piezoelectric layer; and
a bottom electrode;
wherein the top electrode, the piezoelectric layer, and the bottom electrode are characterized by a combination shape of a half-circle connected to a quadrilateral on the flat side of the half-circle, and
wherein the side of the quadrilateral portion of the combination shape opposite to the side connected to the half-circle portion is characterized by an angle a from an axis parallel to the flat side of the half-circle.
5. The device of claim 4 wherein the top electrode and bottom electrode include molybdenum (Mo), ruthenium (Ru), tungsten (W), or aluminum-copper (AlCu).
6. A resonator circuit device comprising:
a top electrode;
a piezoelectric layer; and
a bottom electrode;
wherein the top electrode, the piezoelectric layer, and the bottom electrode are characterized by a portion of an oval shape with only a single axis of symmetry, wherein the portion of the oval shape with only one axis of symmetry is characterized by a first portion remaining after the removal of a second portion at an angle a from an axis perpendicular to the axis of symmetry.
7. The device of claim 6 wherein the top electrode and bottom electrode include molybdenum (Mo), ruthenium (Ru), tungsten (W), or aluminum-copper (AlCu).
8. The device of claim 6 wherein the piezoelectric layer includes materials or alloys having at least one of the following: AlN, AlGaN, GaN, InN, InGaN, AlInN, AlInGaN, ScAIN, ScGaN, AlScYN, and BN.
9. The device of claim 6 wherein the oval shape characterized a shape having an outline of an egg shape.
10. The device of claim 9 wherein the portion characterizing the top electrode, the piezoelectric layer, and the bottom electrode includes the longer end of the egg-shaped outline.
11. The device of claim 9 wherein the portion characterizing the top electrode, the piezoelectric layer, and the bottom electrode includes the shorter end of the egg-shaped outline.
12. The device of claim 6 wherein the oval shape consists of a first half and a second half, wherein the first half is characterized by a half of an elongated or flattened oval, and wherein the second half is characterized by a half of a substantially circular shape.
13. The device of claim 12 wherein the portion characterizing the top electrode, the piezoelectric layer, and the bottom electrode includes the first half.
14. The device of claim 12 wherein the portion characterizing the top electrode, the piezoelectric layer, and the bottom electrode includes the second half.
15. The device of claim 4 wherein the piezoelectric layer includes materials or alloys having at least one of the following: AlN, AlGaN, GaN, InN, InGaN, AlInN, AlInGaN, ScAlN, ScGaN, AlScYN, and BN.
16. The device of claim 4 wherein the angle α ranges from about −30 degrees to about 30 degrees.
17. A resonator circuit device comprising:
a top electrode;
a piezoelectric layer; and
a bottom electrode;
wherein the top electrode, the piezoelectric layer, and the bottom electrode are characterized by a portion of an asymmetrical egg shape, the asymmetrical egg shape being subjected to a skew.
18. The device of claim 17 wherein the top electrode and bottom electrode include molybdenum (Mo), ruthenium (Ru), tungsten (W), or aluminum-copper (AlCu).
19. The device of claim 17 wherein the piezoelectric layer includes materials or alloys having at least one of the following: AlN, AlGaN, GaN, InN, InGaN, AlInN, AlInGaN, ScAlN, ScGaN, AlScYN, and BN.
20. The device of claim 17 wherein the portion of the oval shape with only one axis of symmetry is characterized by a first portion remaining after the removal of a second portion at an angle α from an axis perpendicular to the axis of symmetry.
21. The device of claim 20 wherein the angle α ranges from about −30 degrees to about 30 degrees.
22. The device of claim 6 wherein the angle a ranges from about −30 degrees to about 30 degrees.