Light emitting module
A light emitting module includes a laser element and a first transistor including a first electrode connected to the laser element, a second electrode connected to a power supply, and a control electrode. A second transistor includes a first electrode connected to a second reference potential via a first resistor, a second electrode connected to a first reference potential, and a control electrode. The control electrode of the first transistor is connected to the first electrode of the second transistor and the first resistor. A conversion member is to convert a laser beam emitted by the laser element and includes a sensing wire via which the control electrode of the second transistor is connected to a third reference potential. The control electrode of the second transistor is connected to a fourth reference potential via a second resistor.
1. A light emitting module comprising:
a laser element to emit a laser beam:
a first transistor comprising:
a first electrode connected to the laser element;
a second electrode connected to a power supply; and
a control electrode;
a second transistor comprising:
a first electrode connected to a second reference potential via a first resistor, the control electrode of the first transistor being connected to the first electrode of the second transistor and the first resistor;
a second electrode connected to a first reference potential; and
a control electrode;
a conversion member to convert the laser beam emitted by the laser element into light having a wavelength different from a wavelength of the laser beam, the conversion member comprising:
a sensing wire via which the control electrode of the second transistor is connected to a third reference potential, the control electrode of the second transistor being connected to a fourth reference potential via a second resistor;
the first transistor being configured to be turned on when the first reference potential is applied to the control electrode of the first transistor;
the first transistor being configured to be turned off when the second reference potential is applied to the control electrode of the first transistor;
the second transistor being configured to be turned on when the third reference potential is applied to the control electrode of the second transistor; and
the second transistor being configured to be turned off when the fourth reference potential is applied to the control electrode of the second transistor.
2. The light emitting module according to claim 1 , wherein a higher power supply potential of the power supply potentials to be supplied to the laser element is independent of the higher reference potential of the first reference potential and the second reference potential.
3. The light emitting module according to claim 1 , wherein the second reference potential is equal to the fourth reference potential.
4. The light emitting module according to claim 1 , wherein the first reference potential is equal to the third reference potential.
5. The light emitting module according to claim 1 , wherein a resistance value of the first resistor is lower than a resistance value of the second resistor.
6. The light emitting module according to claim 1 , wherein an internal capacitance of the second transistor is smaller than an internal capacitance of the first transistor.
7. The light emitting module according to claim 1 , wherein the sensing wire is fixed to the surface of the conversion member.
8. The light emitting module according to claim 7 , wherein the sensing wire is formed with a light transmissive conductive material.
9. A light emitting module comprising:
a laser element to emit a laser beam;
a first n-channel transistor comprising:
a drain;
a source, one of the source and the drain being connected to the laser element, another of the source or the drain being connected to a power supply; and
a gate;
a second n-channel transistor comprising:
a drain connected to a sensing potential;
a source connected to a common potential lower than the sensing potential via a first resistor, the gate of the first transistor being connected to the source of the second n-channel transistor and the first resistor; and
a gate;
a conversion member to convert the laser beam into a light having a wavelength different from a wavelength of the laser beam, the conversion member comprising:
a sensing wire via which the gate of the second transistor is connected to the sensing potential, the gate of the second transistor being connected to the common potential via a second resistor;
the first n-channel transistor being configured to be turned on when the sensing potential is applied to the control electrode of the first n-channel transistor;
the first n-channel transistor being configured to be turned off when the common potential is applied to the control electrode of the first n-channel transistor;
the second n-channel transistor being configured to be turned on when the sensing potential is applied to the control electrode of the second n-channel transistor; and
the second n-channel transistor being configured to be turned off when the common potential is applied to the control electrode of the second n-channel transistor.
10. The light emitting module according to claim 9 , wherein a resistance value of the first resistor is lower than a resistance value of the second resistor.
11. The light emitting module according to claim 9 , wherein an internal capacitance of the second transistor is smaller than an internal capacitance of the first transistor.
12. The light emitting module according to claim 9 , wherein the sensing wire is fixed to the surface of the conversion member.
13. The light emitting module according to claim 12 , wherein the sensing wire is formed with a light transmissive conductive material.
14. A light emitting module comprising:
a laser element to emit a laser beam;
a conversion member to convert the laser beam into a light having a different wavelength from a wavelength of the laser beam;
a first transistor serially connected to the laser element;
a second transistor;
a first resistor serially connected to the second transistor at a first connection node that is connected to a control node of the first transistor;
a sensing wire provided on the conversion member; and
a second resistor serially connected to the sensing wire at a second connection node that is connected to a control electrode of the second transistor.
15. The light emitting module according to claim 14 , wherein a resistance value of the first resistor is lower than a resistance value of the second resistor.
16. The light emitting module according to claim 14 , wherein an internal capacitance of the second transistor is smaller than an internal capacitance of the first transistor.
17. The light emitting module according to claim 14 , wherein the sensing wire is fixed to the surface of the conversion member.
18. The light emitting module according to claim 17 , wherein the sensing wire is formed with a light transmissive conductive material.