Wavelength converted semiconductor light emitting device
In embodiments of the invention, a light emitting device includes a semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region. A first wavelength converting layer is disposed in a path of light emitted by the light emitting layer. The first wavelength converting layer may be a wavelength converting ceramic. A second wavelength converting layer is fused to the first wavelength converting layer. The second wavelength converting layer may be a wavelength converting material disposed in glass.
1. A light emitting device comprising:
a semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region and configured to emit light of a first wavelength;
a wavelength converting ceramic layer disposed in a path of the light emitted by the light emitting layer and configured to convert light of the first wavelength to light of a second and longer wavelength;
a wavelength converting glass layer disposed on the wavelength converting ceramic layer and configured to convert light of the first wavelength to light of a third and longer wavelength different from the second wavelength; and
an interface between the wavelength converting ceramic layer and the wavelength converting glass layer that is roughened, patterned, or textured.
2. The light emitting device of claim 1 , wherein the wavelength converting ceramic layer is disposed between the wavelength converting glass layer and the semiconductor structure.
3. The light emitting device of claim 2 further comprising a reflective material, wherein the reflective material is disposed adjacent each of a sidewall of the wavelength converting ceramic layer, a sidewall of the wavelength converting glass layer, and a sidewall of the semiconductor structure.
4. The light emitting device of claim 1 wherein the second wavelength is red and the third wavelength is green.
5. The light emitting device of claim 1 wherein the wavelength converting ceramic layer and the wavelength converting glass layer have angled sidewalls.
6. The light emitting device of claim 1 wherein:
the wavelength converting ceramic layer and the wavelength converting glass layer form a wavelength converting member;
a first portion of the wavelength converting member has a substantially vertical sidewall; and
a second portion of the wavelength converting member has an angled sidewall.