Reflection engineering / wavelength division multiplexing (WDM) geometric optical isolator
The present invention reduces the level of optical reflections created in a photonic integrated circuit (PIC) going back into an integrated laser through Reflection Engineering; optimizing the phase/timing and position of optical reflections inherent to a PIC design while adding engineered reflections to the PIC to allow inherent reflections to be reduced or eliminated. The Wavelength Division Multiplexed (WDM) geometric optical isolator of the present invention combines an array of closely spaced WDM lasers with an array of modulators in a novel geometry in order to provide effective optical isolation of the lasers.
1. A photonic integrated circuit (PIC) comprising:
at least one single frequency integrated laser;
an optical phase within the PIC, including within the laser, waveguides, and any additional integrated photonic components, being controlled by an integration of components on a common, solid substrate;
inherent optical reflections occurring within the PIC back to the at least one integrated laser, said inherent optical reflections having an amplitude and a phase/position of reflection; and
one or more engineered reflections, said one or more engineered reflections comprising a perturbation, said one or more engineered reflections being arranged to interferometrically combine with one or more of said inherent optical reflections, thereby lowering a total optical reflection returning to the at least one integrated laser.
2. The device of claim 1 , further comprising at least one MZI modulator, wherein a corresponding pair of inherent optical reflections occurring in parallel arms of the at least one MZI modulator and returning to the at least one integrated laser comprises two inherent optical reflections which are about 180 degrees out of phase relative to one another.
3. The device of claim 1 , wherein at least one single frequency integrated laser is a semiconductor-based distributed feedback (DFB) laser.
4. The device of claim 1 , wherein at least one single frequency integrated laser is a semiconductor-based distributed Bragg reflector (DBR) laser.
5. The device of claim 1 , wherein at least one single frequency integrated laser is a wavelength tunable laser.
6. The device of claim 1 , further comprising an electro-absorption modulator.
7. The device of claim 1 , wherein the common, solid substrate comprises silicon, indium phosphide, or gallium arsenide.
8. The device of claim 1 , wherein the one or more engineered reflections comprises a perturbation made perpendicular to the device.
9. The device of claim 1 , wherein a size of the one or more engineered reflections is controlled by a gap between the device and the perturbation.
10. The device of claim 1 , wherein at least one engineered reflection is a fixed engineered reflection.
11. The device of claim 1 , wherein at least one engineered reflection is a tunable engineered reflection.