Semiconductor devices and manufacturing methods of the same
A semiconductor device includes a first substrate structure and a second substrate structure. The first substrate structure includes a base substrate, circuit elements disposed on the base substrate, a first substrate disposed on the circuit elements, first memory cells disposed on the first substrate and electrically connected to the circuit elements, first bit lines disposed on the first memory cells and connected to the first memory cells, and first bonding pads disposed on the first bit lines to be connected to the first bit lines, respectively. The second substrate structure is connected to the first substrate structure on the first substrate structure, and includes a second substrate, second memory cells disposed on the second substrate, second bit lines disposed on the second memory cells and connected to the second memory cells, and second bonding pads disposed on the second bit lines to be connected to the second bit lines, respectively. The first substrate structure and the second substrate structure are connected to each other by bonding the first bonding pads to the second bonding pads, and the first bonding pads and second bonding pads are vertically between the first bit lines and the second bit lines, without the first substrate or second substrate disposed vertically between the first bit lines and the second bit lines.
1. A semiconductor device, comprising:
a first substrate structure including a first substrate, first gate electrodes stacked and spaced apart from each other in a direction perpendicular to a first surface of the first substrate, first channels extending perpendicular to the first substrate while passing through the first gate electrodes, first bit lines connected to the first channels, and first bonding pads disposed on the first bit lines to be electrically connected to the first bit lines, wherein, in the direction perpendicular to the first surface of the first substrate, the first bit lines are disposed between the first channels and the first bonding pads, and the first channels extend between the first substrate and the first bit lines; and
a second substrate structure connected to the first substrate structure on the first substrate structure, and including a second substrate, second gate electrodes stacked and spaced apart from each other in a direction perpendicular to a first surface of the second substrate that faces the first surface of the first substrate, second channels extending perpendicular to the second substrate while passing through the second gate electrodes, second bit lines connected to the second channels, and second bonding pads disposed on the second bit lines to be electrically connected to the second bit lines, wherein, in the direction perpendicular to the first surface of the second substrate, the second bit lines are disposed between the second channels and the second bonding pads, and the second channels extend between the second substrate and the second bit lines,
wherein the first substrate structure and the second substrate structure are bonded together by the first bonding pads and the second bonding pads and connected to each other, and the first bit lines are electrically connected to the second bit lines, respectively, through the first bonding pads and the second bonding pads.
2. The semiconductor device of claim 1 , wherein the first bit lines are electrically connected to the second bit lines, and respective first bit lines and second bit lines are disposed in parallel and vertically overlap each other.
3. The semiconductor device of claim 2 , wherein the first bit lines are connected to the second bit lines through a wiring structure, and
the wiring structure includes at least one contact plug disposed between the first bonding pads and the first bit lines and at least one contact plug disposed between the second bonding pads and the second bit lines.
4. The semiconductor device of claim 1 , wherein the first channels are connected to the first bit lines, through respective contact plugs, and the second channels are connected to the second bit lines, through respective contact plugs.
5. The semiconductor device of claim 1 , wherein the first gate electrodes and the second gate electrodes extend by different lengths in one direction parallel to the first surfaces of the first substrate and the second substrate, respectively, to provide contact regions at ends of the first gate electrodes and the second gate electrodes.
6. The semiconductor device of claim 5 , further comprising:
a first cell contact plug extending perpendicular to the first surface of the first substrate and connected to one first gate electrode of the first gate electrodes in the contact region of the one first gate electrode;
a second cell contact plug extending perpendicular to the first surface of the second substrate and connected to one second gate electrode of the second gate electrodes in the contact region of the one second gate electrode;
a third bonding pad disposed on the first cell contact plug so that in the direction perpendicular to the first surface of the first substrate, the first cell contact plug is between the one first gate electrode and the third bonding pad; and
a fourth bonding pad disposed on the second cell contact plug so that in the direction perpendicular to the first surface of the second substrate, the second cell contact plug is between the one second gate electrode and the fourth bonding pad,
wherein the third bonding pad and the fourth bonding pad are bonded to each other.
7. The semiconductor device of claim 6 , wherein the third bonding pad and the fourth bonding pad electrically connects the first cell contact plug to the second cell contact plug.
8. The semiconductor device of claim 1 , wherein the first gate electrodes and the second gate electrodes as well as the first channels and the second channels are disposed symmetrically about an interface between the first substrate structure and the second substrate structure.
9. The semiconductor device of claim 1 , wherein the first substrate structure further includes a base substrate, and circuit elements disposed between the first substrate and the base substrate.
10. The semiconductor device of claim 9 , wherein the base substrate and the second substrate include a single crystalline layer, and the first substrate includes a polycrystalline layer or an epitaxial layer.
11. The semiconductor device of claim 1 , further comprising:
a third substrate structure disposed between the first substrate structure and the second substrate structure and connected to the first substrate structure and the second substrate structure, and including a third substrate and circuit elements disposed on the third substrate.
12. The semiconductor device of claim 11 , wherein the third substrate has a first surface on which the circuit elements are arranged and a second surface opposite the first surface, and
the third substrate structure further includes third bonding pads and fourth bonding pads disposed on each of the first surface and the second surface of the third substrate and connected to the first bonding pads and the second bonding pads, respectively.
13. The semiconductor device of claim 12 , wherein the third substrate structure further includes through contact plugs respectively connecting the third bonding pads to the fourth bonding pads while passing through the third substrate.
14. The semiconductor device of claim 1 , wherein the first substrate structure and the second substrate structure further include a first source conductive layer and a second source conductive layer, disposed on the first substrate and the second substrate or in the first substrate and the second substrate, respectively, and
the first source conductive layer and the second source conductive layer are electrically connected to each other.
15. The semiconductor device of claim 1 , wherein the first substrate structure and the second substrate structure further include a first dielectric layer and a second dielectric layer bonded to each other while surrounding the first bonding pads and the second bonding pads, respectively.
16. A semiconductor device, comprising:
a first substrate structure including a first substrate, first gate electrodes stacked and spaced apart from each other in a direction perpendicular to a first surface of the first substrate and extended by different lengths in one direction to provide first contact regions, first channels extending perpendicular to the first substrate while passing through the first gate electrodes, first cell contact plugs connected to the first gate electrodes in the first contact regions and extending perpendicular to the first surface of the first substrate, first bit lines connected to the first channels, and first bonding pads disposed at a first surface of the first substrate structure, wherein the first bit lines are disposed between the first channels and the first bonding pads in a direction perpendicular to the first surface of the first substrate; and
a second substrate structure connected to the first substrate structure on the first substrate structure, and including a second substrate, second gate electrodes stacked and spaced apart from each other in a direction perpendicular to a first surface of the second substrate and extended by different lengths in one direction to provide second contact regions, second channels extending perpendicular to the second substrate while passing through the second gate electrodes, second cell contact plugs connected to the second gate electrodes in the second contact regions and extending perpendicular to the first surface of the second substrate, second bit lines connected to the second channels, and second bonding pads bonded to the first bonding pads and disposed at a first surface of the second substrate structure,
wherein the first surface of the first substrate faces the first surface of the second substrate, and the first surface of the first substrate structure faces the first surface of the second substrate structure, and
wherein the first bit lines are electrically connected to the second bit lines through respective bonding pads of the first bonding pads and the second bonding pads, and some of the first cell contact plugs are respectively electrically connected to the second cell contact plugs through respective bonding pads of the first bonding pads and the second bonding pads.
17. The semiconductor device of claim 16 , wherein the first bit lines are electrically connected to the second bit lines, and respective first bit lines and second bit lines are disposed in parallel and vertically overlap each other, and
the first cell contact plugs are electrically connected to the second cell contact plugs and vertically overlap each other.
18. The semiconductor device of claim 16 , wherein the first cell contact plugs have a tapered shape that tapers in a direction extending from the first bonding pads toward the first substrate, and the second cell contact plugs have a tapered shape that tapers in a direction extending from the second bonding pads toward the second substrate.
19. A semiconductor device, comprising:
a first substrate structure including a base substrate, circuit elements disposed on the base substrate, a first substrate disposed on the circuit elements, first memory cells disposed on the first substrate and electrically connected to the circuit elements, first bit lines disposed on the first memory cells and connected to the first memory cells, and first bonding pads disposed on the first bit lines to be connected to the first bit lines, respectively; and
a second substrate structure connected to the first substrate structure on the first substrate structure, and including a second substrate, second memory cells disposed on the second substrate, second bit lines disposed on the second memory cells and connected to the second memory cells, and second bonding pads disposed on the second bit lines to be connected to the second bit lines, respectively,
wherein the first substrate structure and the second substrate structure are connected to each other by bonding the first bonding pads to the second bonding pads, and
wherein the first bonding pads and second bonding pads are vertically between the first bit lines and the second bit lines, without the first substrate or second substrate disposed vertically between the first bit lines and the second bit lines.
20. The semiconductor device of claim 19 , wherein the first bit lines are electrically connected to the second bit lines through the first bonding pads and the second bonding pads, respectively.