Singulation of light emitting devices before and after application of phosphor
A two-stage singulation process is used in the fabrication of phosphor coated light emitting elements. Prior to the application of the phosphor coating, the individual light emitting elements are singulated using a laser dicing process; after application of the phosphor coating, the phosphor coated light emitting elements are singulated using a mechanical dicing process. Before laser dicing of the light emitting elements, the wafer is positioned on a piece of dicing- or die-attach-tape held by a frame; after laser dicing, the tape is stretched to provide space between the individual light emitting elements that allows for the wider kerf width of the subsequent mechanical dicing after application of the phosphor coating.
1. A method comprising:
mounting a wafer comprising a plurality of light emitting elements on a stretchable film,
dicing the wafer on the stretchable film with a laser to singulate the light emitting elements,
after dicing the wafer, stretching the stretchable film to provide space between each of the light emitting elements,
after stretching the stretchable film, coating the light emitting elements with a layer of wavelength conversion material to provide a sheet of phosphor coated light emitting elements, and
after coating the light emitting elements,
dicing the sheet by mechanically cutting the sheet to singulate the phosphor coated light emitting elements.
2. The method of claim 1 , including providing a filler material in the space between the light emitting elements after stretching the stretchable film and before coating the light emitting elements.
3. The method of claim 2 , comprising removing the filler material before dicing the sheet.
4. The method of claim 1 , comprising removing the stretchable film before dicing the sheet.
5. The method of claim 1 , comprising attaching a transparent substrate to sheet phosphor coated light emitting elements before dicing the sheet.
6. The method of claim 5 , wherein the transparent substrate includes a glass sheet adhered to the sheet phosphor coated light emitting elements.
7. The method of claim 1 , comprising fabricating the plurality of light emitting elements with streets between each of the light emitting elements.
8. The method of claim 7 , wherein the street width is about 30 μm or less.
9. The method of claim 8 , wherein the laser dices the wafer with a kerf width of approximately 10-15 μm.
10. The method of claim 1 , wherein the space provided between each of the light emitting elements is greater than 100 μm.
11. The method of claim 9 , wherein the space provided between each of the light emitting elements is greater than 100 μm.
12. The method of claim 1 , wherein wafer utilization is greater than 88%.