IP Library Granted Patent US 10,778,207
Granted Patent B1
US 10,778,207 · App. 16/401,812 · Granted Sep 15, 2020

Passive dynamic biasing for MOSFET cascode

Inventor: Jonah Edward Nuttgens (Southampton, GB)
Assignee: Semtech Corporation
H03K17/04106H01S5/0427H04B10/50
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Quick Facts
Patent No.
US 10,778,207
App. No.
16/401,812
Granted
Sep 15, 2020
Kind
B1
Abstract

A driver circuit has a plurality of transistors in a cascode arrangement. A passive biasing circuit is coupled to a gate terminal of a first transistor of the plurality of transistors. The passive biasing circuit has a first resistor coupled to a circuit node to provide a first biasing signal, a first capacitor coupled between the circuit node and a power supply conductor, a second resistor coupled between the circuit node and a drain terminal of the first transistor, and a third resistor coupled between the circuit node and a source terminal of the first transistor. A second transistor has a gate terminal coupled for receiving a data signal which controls an optical device.

Claims (58)

1. A driver circuit, comprising:

a plurality of transistors of a same conductivity type coupled in a cascode arrangement; and

a first passive biasing circuit coupled to a gate terminal of a first transistor of the plurality of transistors, the first passive biasing circuit including,

(a) a biasing circuit coupled to a circuit node to provide a first biasing signal to the gate terminal of the first transistor,

(b) a first capacitor coupled between the circuit node and a power supply conductor,

(c) a first resistor coupled between the circuit node and a drain terminal of the first transistor, and

(d) a second resistor coupled between the circuit node and a source terminal of the first transistor.

2. The driver circuit of claim 1 , further including:

a second passive biasing cell providing a second biasing signal; and

a second transistor of the plurality of transistors comprising a gate terminal coupled for receiving the second biasing signal.

3. The driver circuit of claim 1 , further including a second transistor of the plurality of transistors comprising a gate terminal coupled for receiving a data signal.

4. The driver circuit of claim 1 , further including a second transistor of the plurality of transistors comprising a gate terminal coupled for receiving a second biasing signal.

5. The driver circuit of claim 1 , wherein the biasing circuit includes:

a voltage source; and

a third resistor coupled between the voltage source and the circuit node.

6. A driver circuit, comprising:

a plurality of transistors in a cascode arrangement; and

a first passive biasing circuit coupled to a gate terminal of a first transistor of the plurality of transistors, the first passive biasing circuit including,

(a) a biasing circuit coupled to a circuit node to provide a first biasing signal to the gate terminal of the first transistor,

(b) a first capacitor coupled between the circuit node and a power supply conductor,

(c) a first resistor coupled between the circuit node and a drain terminal of the first transistor, and

(d) a second resistor coupled between the circuit node and a source terminal of the first transistor,

wherein the biasing circuit includes:

a current source coupled to the circuit node, and

a third resistor coupled in parallel with the current source.

7. A driver circuit, comprising:

a first metal oxide semiconductor (MOS) transistor; and

a first passive biasing circuit coupled to a gate terminal of a first MOS transistor, the first passive biasing circuit including,

(a) a biasing circuit coupled to a circuit node to provide a first biasing signal to the gate terminal of the first MOS transistor, wherein the biasing circuit includes a current source coupled to the circuit node, and a third resistor coupled in parallel with the current source,

(b) a first capacitor coupled between the circuit node and a power supply conductor,

(c) a first resistor coupled between the circuit node and a drain terminal of the first MOS transistor, and

(d) a second resistor coupled between the circuit node and a source terminal of the first MOS transistor.

8. The driver circuit of claim 7 , further including:

a second MOS transistor of a same conductivity type as the first transistor and coupled in a cascode arrangement with the first MOS transistor; and

a second passive biasing circuit providing a second biasing signal to a gate terminal of the second MOS transistor.

9. The driver circuit of claim 7 , wherein the biasing circuit further includes:

a voltage source; and

a third resistor coupled between the voltage source and the circuit node.

10. The driver circuit of claim 7 , further including a second MOS transistor in a cascode arrangement with the first MOS transistor and including a gate terminal coupled for receiving a data signal.

11. A method of making a driver circuit, comprising:

providing a plurality of transistors of a same conductivity type coupled in a cascode arrangement; and

providing a first passive biasing circuit coupled to a gate terminal of a first transistor of the plurality of transistors, the first passive biasing circuit including,

(a) a biasing circuit coupled to a circuit node to provide a first biasing signal to the gate terminal of the first transistor,

(b) a first capacitor coupled between the circuit node and a power supply conductor,

(c) a first resistor coupled between the circuit node and a drain terminal of the first transistor, and

(d) a second resistor coupled between the circuit node and a source terminal of the first transistor.

12. The method of claim 11 , further including:

providing a second passive biasing cell for producing a second biasing signal; and

providing a second transistor of the plurality of transistors comprising a gate terminal coupled for receiving the second biasing signal.

13. The method of claim 11 , wherein the biasing circuit includes:

a voltage source; and

a third resistor coupled between the voltage source and the circuit node.

14. The method of claim 11 , wherein the biasing circuit includes:

a current source coupled to the circuit node; and

a third resistor coupled in parallel with the current source.

15. The method of claim 11 , further including a second transistor of the plurality of transistors comprising a gate terminal coupled for receiving a data signal.

16. The method of claim 11 , further including a second transistor of the plurality of transistors comprising a gate terminal coupled for receiving a second biasing signal.

17. The method of claim 11 , further including providing a laser diode coupled to an output of the driver circuit.

Assignments (3)
ASSIGNMENT OF PATENT SECURITY INTEREST PREVIOUSLY RECORDED AT REEL/FRAME (050437/0902) Recorded Feb 17, 2023
From: HSBC BANK USA, NATIONAL ASSOCIATION, AS RESIGNING AGENT
To: JPMORGAN CHASE BANK, N.A., AS SUCCESSOR AGENT
Reel/Frame 062784/0069 →
SECURITY INTEREST Recorded Sep 19, 2019
From: SEMTECH CORPORATION; SEMTECH NEW YORK CORPORATION; SIERRA MONOLITHICS, INC.; SEMTECH EV, INC.; TRIUNE SYSTEMS, L.L.C.; TRIUNE IP, LLC
To: HSBC BANK USA, NATIONAL ASSOCIATION, AS ADMINISTRATIVE AGENT
Reel/Frame 050437/0902 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 2, 2019
From: NUTTGENS, JONAH EDWARD
To: SEMTECH CORPORATION
Reel/Frame 049065/0875 →