Microlenses for semiconductor device with single-photon avalanche diode pixels
An imaging device may include a plurality of single-photon avalanche diode (SPAD) pixels. The SPAD pixels may be overlapped by square toroidal microlenses to direct light incident on the pixels onto photosensitive regions of the pixels. The square toroidal microlenses may be formed as first and second sets of microlenses aligned with every other SPAD pixel and may allow the square toroidal microlenses to be formed without gaps between adjacent lenses. Additionally or alternatively, a central portion of each square toroidal microlenses may be filled by a fill-in microlens. Together, the square toroidal microlenses and the fill-in microlenses may form convex microlenses over each SPAD pixel. The fill-in microlenses may be formed from material having a higher index of refraction than material that forms the square toroidal microlenses.
1. A semiconductor device comprising:
a plurality of single-photon avalanche diode pixels;
a plurality of first microlenses, wherein at least one of the first microlenses covers each of the plurality of single-photon avalanche diode pixels and wherein each first microlens is formed from a material having a first index of refraction; and
a plurality of second microlenses, wherein each second microlens fills a gap in the plurality of first microlenses and wherein each second microlens is formed from a material having a second index of refraction that is different from the first index of refraction.
2. The semiconductor device defined in claim 1 wherein each first microlens is a toroidal microlens that has a central opening and wherein each second microlens fills a respective one of the central openings in the first microlenses.
3. The semiconductor device defined in claim 2 wherein the plurality of single-photon avalanche diode pixels each have a first shape and wherein each of the first microlenses has a second shape that matches the first shape.
4. The semiconductor device defined in claim 3 wherein the first shape and the second shape are both square.
5. The semiconductor device defined in claim 1 wherein the second index of refraction is higher than the first index of refraction.
6. The semiconductor device defined in claim 1 wherein the first microlenses and second microlenses together form a plurality of convex microlenses and wherein each of the convex microlenses overlaps a respective one of the plurality of single-photon avalanche diode pixels.
7. The semiconductor device defined in claim 1 wherein the first microlenses and the second microlenses are at least partially formed from the same material.
8. The semiconductor device defined in claim 1 wherein the first microlenses are spherical microlenses, wherein the spherical microlenses are formed in a two-by-two array over each single-photon avalanche diode pixel, and wherein each of the second microlenses fills the gap between the four spherical microlenses over each pixel.
9. The semiconductor device defined in claim 1 wherein the first microlenses are square toroidal microlens, wherein adjacent first microlenses are in direct contact with one another, and wherein the second microlenses fill center gaps in the square toroidal microlenses.
10. A semiconductor device comprising:
a single-photon avalanche diode pixel;
a toroidal microlens over the single-photon avalanche diode pixel, wherein the toroidal microlens has a central opening and wherein the toroidal microlens is a square toroidal microlens; and
a fill-in microlens that fills the central opening of the toroidal microlens.
11. The semiconductor device defined in claim 10 wherein the single-photon avalanche diode pixel has a square shape.
12. The semiconductor device defined in claim 11 wherein the square toroidal microlens has a first index of refraction and the fill-in microlens has a second index of refraction that is higher than the first index of refraction.