Semiconductor module having slits and shunt resistor
Lands ( 11 c and 11 d ) are parts of base plates ( 104 c and 104 d ), and electrodes of a shunt resistor ( 103 U) are put on and connected to the lands ( 11 c and 11 d ). Slits ( 130 and 131 ) are formed in the lands ( 11 c and 11 d ) to separate a main electric circuit in which a main current flows and control terminals ( 123 and 124 ) with which the electric potentials of the electrodes of the shunt resistor ( 103 U) are detected. Leading end portions of the slits ( 130 and 131 ) extend to the vicinity of the electrodes of the shunt resistor ( 103 U).
1. A semiconductor module comprising:
a plurality of base plates, each being formed into a plate shape from a conductive material;
power terminals extended from the plurality of base plates;
lands, which are parts of the plurality of base plates, and are to be used for placement and connection of elements;
switching elements put on and connected to the lands to control a current flowing in the power terminals; and
a shunt resistor put on and connected to part of the lands,
wherein the lands on which the shunt resistor is put and to which the shunt resistor is connected have slits formed so as to separate a main electric circuit in which a main current flows from detection-use terminals configured to detect electric portions of electrodes of the shunt resistor,
wherein the slits have leading end portions extending to a vicinity of the electrodes of the shunt resistor,
wherein the power terminals are aligned to form a line of power terminals,
wherein the semiconductor module further comprises a line of control terminals formed of low-power terminals, which are used for control and detection, and are aligned with respect to a side opposed to the line of power terminals, and
wherein the shunt resistor is placed on a side where the line of power terminals is located.
2. A semiconductor module, comprising:
a plurality of base plates, each being formed into a plate shape from a conductive material;
power terminals extended from the plurality of base plates;
lands, which are parts of the plurality of base plates, and are to be used for placement and connection of elements;
switching elements put on and connected to the lands to control a current flowing in the power terminals; and
a shunt resistor put on and connected to part of the lands,
wherein the lands on which the shunt resistor is put and to which the shunt resistor is connected have slits formed so as to separate a main electric circuit in which a main current flows from detection-use terminals configured to detect electric potentials of electrodes of the shunt resistor,
wherein the slit have leading end portions extending to a vicinity of the electrodes of the shunt resistor,
wherein bridge circuits of a plurality of phases each including a high-potential-side switching element, a low-potential-side switching element, and the shunt resistor are together encased in a resin mold to be integrated into one component.
3. The semiconductor module according to claim 1 , wherein bridge circuits of a plurality of phases each including a high-potential-side switching element, a low-potential-side switching element, and the shunt resistor are together encased in a resin mold to be integrated into one component.
4. The semiconductor module according to claim 2 , wherein a bridge circuit of one phase among the bridge circuits of the plurality of phases is arranged so as to be axisymmetric with a bridge circuit of another phase that is adjacent to the bridge circuit of the one phase, among the bridge circuits of the plurality of phases, and
wherein the axisymmetrically arranged bridge circuits of the one phase and the another phase share a terminal.
5. The semiconductor module according to claim 3 , wherein a bridge circuit of one phase among the bridge circuits of the plurality of phases is arranged so as to be axisymmetric with a bridge circuit of another phase that is adjacent to the bridge circuit of the one phase, among the bridge circuits of the plurality of phases, and
wherein the axisymmetrically arranged bridge circuits of the one phase and the another phase share a terminal.
6. The semiconductor module according to claim 4 , wherein the shared terminal has a width and a thickness that are substantially the same as a width and a thickness of a power supply terminal or a ground terminal in an independent bridge circuit of another semiconductor module which does not have bridge circuits sharing the power supply terminal or the ground terminal, respectively.
7. The semiconductor module according to claim 5 , wherein the shared terminal has a width and a thickness that are substantially the same as a width and a thickness of a power supply terminal or a ground terminal in an independent bridge circuit of another semiconductor module which does not have bridge circuits sharing the power supply terminal or the ground terminal, respectively.
8. The semiconductor module according to claim 1 ,
wherein, in the lands on which the shunt resistor is put and to which the shunt resistor is connected, the detection-use terminals extend along an electrode width direction of the shunt resistor from corner portions of the lands closest to places on which the electrodes of the shunt resistor are put, and
wherein the slits are formed along the electrode width direction.
9. The semiconductor module according to claim 8 , wherein bridge circuits of a plurality of phases each including a high-potential-side switching element, a low-potential-side switching element, and the shunt resistor are together encased in a resin mold to be integrated into one component.
10. The semiconductor module according to claim 8 ,
wherein a bridge circuit of one phase among the bridge circuits of the plurality of phases is arranged so as to be axisymmetric with a bridge circuit of another phase that is adjacent to the bridge circuit of the one phase, among the bridge circuits of the plurality of phases, and
wherein the axisymmetrically arranged bridge circuits of the one phase and the another phase share a terminal.
11. The semiconductor module according to claim 2 ,
wherein, in the lands on which the shunt resistor is put and to which the shunt resistor is connected, the detection-use terminals extend along an electrode width direction of the shunt resistor from corner portions of the lands closest to places on which the electrodes of the shunt resistor are put, and
wherein the slits are formed along the electrode width direction.
12. The semiconductor module according to claim 11 , wherein the power terminals are aligned to form a line of power terminals,
wherein the semiconductor module further comprises a line of control terminals formed of low-power terminals, which are used for control and detection, and are aligned with respect to a side opposed to the line of power terminals, and
wherein the shunt resistor is placed on a side where the line of power terminals is located.
13. The semiconductor module according to claim 11 ,
wherein a bridge circuit of one phase among the bridge circuits of the plurality of phases is arranged so as to be axisymmetric with a bridge circuit of another phase that is adjacent to the bridge circuit of the one phase, among the bridge circuits of the plurality of phases, and
wherein the axisymmetrically arranged bridge circuits of the one phase and the another phase share a terminal.