Photovoltaic device
Methods and apparatus are provided for converting electromagnetic radiation, such as solar energy, into electric energy with increased efficiency when compared to conventional solar cells. One embodiment of the present invention provides a photovoltaic (PV) device. The PV device comprises an absorber layer made of a compound semiconductor; and an emitter layer located closer than the absorber layer to a first side of the device. The PV device includes a p-n junction formed between the emitter layer and the absorber layer, the p-n junction causing a voltage to be generated in the device in response to the device being exposed to light at a second side of the device. Such innovations may allow for greater efficiency and flexibility in PV devices when compared to conventional solar cells.
1. A photovoltaic (PV) device comprising:
a base layer having a first portion and a second portion, wherein the first portion and the second portion of the base layer are made of a material including a compound semiconductor material having a first doping type;
an emitter layer located closer than the base layer to a first side of the device and having a second doping type,
wherein the second portion of the base layer is located closer than the first portion of the base layer to the emitter layer; and
a p-n junction formed between the emitter layer and the base layer, the p-n junction causing a voltage to be generated in the PV device in response to the PV device being exposed to a light source at a second side of the PV device,
wherein the emitter layer is made of one material including a compound semiconductor material and that compound semiconductor material has a compound that is different than a compound of the compound semiconductor material of the first portion of the base layer by at least one element, such that a heterojunction is formed between the emitter layer and the first portion of the base layer,
wherein the emitter layer is of higher band gap energy than the first portion of the base layer,
wherein the second portion of the base layer provides a gradual transition in composition that is limited to a region between the composition of the material of the first portion of the base layer nearest to the emitter layer and the composition of the material of the emitter layer nearest to the first portion of the base layer.
2. The PV device of claim 1 , wherein the second portion of the base layer provides an offset between the p-n junction and the heterojunction.
3. The PV device of claim 1 , wherein recesses are formed through the emitter layer and partly through the base layer, allowing for electrical contact to both the emitter and base layers from the same side of the device.
4. The PV device of claim 1 , wherein the compound semiconductor material of the base layer is a group III-V compound semiconductor material.
5. The PV device of claim 1 , wherein the compound semiconductor material of the material of the first portion of the base layer is gallium arsenide (GaAs).
6. The PV device of claim 1 , wherein the compound semiconductor material of the first portion of the base layer is indium gallium phosphide (InGaP).
7. The PV device of claim 1 , wherein the compound semiconductor material of the emitter layer is a group III-V compound semiconductor material.
8. The PV device of claim 1 , wherein the compound semiconductor material of the emitter layer is aluminum gallium arsenide (AlGaAs).
9. The PV device of claim 1 , wherein the compound semiconductor material of the emitter layer is aluminum gallium indium phosphide (AlGaInP).
10. The PV device of claim 1 , wherein composition of the first portion of the base layer is constant.
11. A photovoltaic (PV) device comprising:
a base layer made of a material including a compound semiconductor material having a first doping type;
an emitter layer located closer than the base layer to a first side of the device and having a second doping type; and
a p-n junction formed between the emitter layer and the base layer, the p-n junction causing a voltage to be generated in the PV device in response to the PV device being exposed to a light source at a second side of the PV device,
wherein the emitter layer is made of one material including a compound semiconductor material and that compound semiconductor material has a compound that is different than a compound of the compound semiconductor material of the base layer by at least one element, such that a heterojunction is formed between the emitter layer and the base layer,
wherein the emitter layer is of higher band gap energy than the base layer and there is a gradual transition in composition that is limited to a region between the composition of the material of the base layer nearest the emitter layer and the composition of the material of the emitter layer nearest the base layer.
12. The PV device of claim 11 , wherein recesses are formed through the emitter layer and partly through the base layer, allowing for electrical contact to both the emitter and base layers from the same side of the device.
13. The PV device of claim 11 , wherein the compound semiconductor material of the base layer is a group III-V compound semiconductor material.
14. The PV device of claim 11 , wherein the compound semiconductor material of the base layer is gallium arsenide (GaAs).
15. The PV device of claim 11 , wherein the compound semiconductor material of the base layer is indium gallium phosphide (InGaP).
16. The PV device of claim 11 , wherein the base layer further comprises a first portion and a second portion, and wherein the second portion of the base layer is located closer than the first portion of the base layer to the emitter layer.
17. The PV device of claim 16 , wherein the second portion of the base layer provides an offset between the p-n junction and the heterojunction.
18. The PV device of claim 16 , wherein the second portion of the base layer provides a gradual transition in composition from the composition of the first portion of the base layer to the composition of the emitter layer and wherein composition of the first portion of the base layer is constant.
19. The PV device of claim 16 , wherein the compound semiconductor material of the first portion of the base layer is gallium arsenide (GaAs).
20. The PV device of claim 16 , wherein the compound semiconductor material of the first portion of the base layer is indium gallium phosphide (InGaP).
21. The PV device of claim 11 , wherein the compound semiconductor material of the emitter layer is a group III-V compound semiconductor material.
22. The PV device of claim 11 , wherein the compound semiconductor material of the emitter layer is aluminum gallium arsenide (AlGaAs).
23. The PV device of claim 11 , wherein the compound semiconductor material of the emitter layer is aluminum gallium indium phosphide (AlGaInP).