Quantum dot LED design based on resonant energy transfer
Embodiments of the present application relate to illumination devices using luminescent nanostructures. An illumination device includes a first conductive layer, a second conductive layer, a hole transport layer, an electron transport layer and a material layer that includes a plurality of luminescent nanostructures. The hole transport layer and the electron transport layer are each disposed between the first conductive layer and the second conductive layer. The material layer is disposed between the hole transport layer and the electron transport layer and includes one or more discontinuities in its thickness such that the hole transport layer and the electron transport layer contact each other at the one or more discontinuities. Resonant energy transfer occurs between the luminescent nanostructures and excitons at the discontinuities.
1. An illumination device, comprising:
a first conductive layer;
a second conductive layer;
a hole transport layer disposed between the first conductive layer and the second conductive layer;
an electron transport layer disposed between the first conductive layer and the second conductive layer; and
a layer of plurality of luminescent nanostructures, wherein the layer of plurality of luminescent nanostructures is disposed between the electron transport layer and the hole transport layer,
wherein the layer of plurality of luminescent nanostructures comprises a plurality of discontinuities through a thickness of the layer of plurality of luminescent nanostructures such that the hole transport layer and the electron transport layer directly contact each other at planar interfaces disposed at the plurality of discontinuities,
wherein the planar interfaces are coplanar with a planar bottom surface of the layer of plurality of luminescent nanostructures.
2. The illumination device of claim 1 , wherein the plurality of luminescent nanostructures comprises a plurality of quantum dots.
3. The illumination device of claim 2 , wherein the plurality of quantum dots comprises quantum dots having a core-shell structure, wherein a shell of the core-shell structure has a thickness between 1 nanometer and 5 nanometers.
4. The illumination device of claim 3 , wherein the plurality of quantum dots comprises quantum dots having a core material, of the core-shell structure, of indium phosphide (InP).
5. The illumination device of claim 1 , wherein the layer of plurality of luminescent nanostructures has a thickness of one monolayer.
6. The illumination device of claim 1 , wherein the plurality of discontinuities forms a random pattern.
7. The illumination device of claim 1 , wherein the plurality of discontinuities forms a regular pattern.
8. The illumination device of claim 1 , further comprising a hole injection layer disposed between the first conductive layer and the hole transport layer.
9. The illumination device of claim 1 , wherein the electron transport layer comprises a plurality of zinc magnesium oxide (ZnMgO) nanocrystals.
10. A quantum dot light emitting diode (QD-LED) device, comprising:
a layer stack comprising:
a first conductive layer,
a second conductive layer,
a hole transport layer disposed between the first conductive layer and the second conductive layer,
an electron transport layer disposed between the first conductive layer and the second conductive layer, and
a plurality of quantum dots, wherein the plurality of quantum dots is disposed in a separate layer between the electron transport layer and the hole transport layer,
wherein the separate layer comprises a plurality of discontinuities through a thickness of the separate layer such that the hole transport layer and the electron transport layer directly contact each other at planar interfaces disposed at the plurality of discontinuities, and
wherein the planar interfaces are coplanar with a planar bottom surface of the separate layer;
a first contact coupled to the first conductive layer;
a second contact coupled to the second conductive layer; and
an encapsulating material configured to surround the layer stack.
11. The QD-LED device of claim 10 , wherein the encapsulating material comprises an epoxy resin.
12. The QD-LED device of claim 10 , wherein the plurality of quantum dots comprises quantum dots having a core-shell structure, wherein a shell of the core-shell structure has a thickness between 1 nanometer and 5 nanometers.
13. The QD-LED device of claim 12 , wherein the plurality of quantum dots comprises quantum dots having a core material, of the core-shell structure, of indium phosphide (InP).
14. The QD-LED device of claim 10 , wherein the separate layer has a thickness of one monolayer.
15. The QD-LED device of claim 10 , wherein the layer stack further comprises a hole injection layer disposed between the first conductive layer and the hole transport layer.
16. The QD-LED device of claim 10 , wherein the electron transport layer comprises a plurality of zinc magnesium oxide (ZnMgO) nanocrystals.