IP Library Granted Patent US 10,879,413
Granted Patent B2
US 10,879,413 · App. 16/408,268 · Granted Dec 29, 2020

Contacts for solar cells

Inventors: Matthieu Moors (Palo Alto, CA); David D. Smith (Campbell, CA); Gabriel Harley (Mountain View, CA); Taeseok Kim (Pleasanton, CA)
H01L31/061H01L31/02167H01L31/022425H01L31/068H01L31/1864Y02E10/547
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Quick Facts
Patent No.
US 10,879,413
App. No.
16/408,268
Granted
Dec 29, 2020
Kind
B2
Abstract

A method of fabricating a solar cell is disclosed. The method can include forming a dielectric region on a surface of a solar cell structure and forming a metal layer on the dielectric layer. The method can also include configuring a laser beam with a particular shape and directing the laser beam with the particular shape on the metal layer, where the particular shape allows a contact to be formed between the metal layer and the solar cell structure.

Claims (30)

1. A solar cell, comprising:

a doped region on the solar cell, wherein the doped region is located at a back surface of the solar cell;

a dielectric layer directly on the doped region, the dielectric layer having a dissociated region therein, wherein the dissociated region is in contact with the doped region, wherein the dissociated region comprises dissociated material of the dielectric layer; and

a plurality of metal layers directly on the dielectric layer, each of the plurality of metal layers physically separated from one another, wherein one of the plurality of metal layers is in contact with the dissociated material of the dissociated region of the dielectric layer, and wherein the dissociated material of the dissociated region of the dielectric layer is vertically between and physically contacts both the one of the plurality of metal layers and the doped region.

2. The solar cell of claim 1 , wherein the doped region is an N-type doped region or a P-type doped region.

3. The solar cell of claim 1 , wherein the dissociated region provides an ohmic contact between the one of the plurality of metal layers and the doped region.

4. The solar cell of claim 1 , wherein the dissociated region mechanically couples the one of the plurality of metal layers and the doped region.

5. The solar cell of claim 1 , wherein the plurality of metal layers comprises a metal foil.

6. The solar cell of claim 1 , wherein the dissociated region is a melted amorphous silicon region.

7. The solar cell of claim 1 , wherein the plurality of metal layers is selected from a group consisting of copper, tin, aluminum, silver, gold, chromium, iron, nickel, zinc, ruthenium, palladium and platinum.

8. The solar cell of claim 1 , wherein the dielectric layer comprises a material selected from a group consisting of silicon nitride, silicon oxide, silicon oxynitride, aluminum oxide, amorphous silicon and polysilicon.

9. A solar cell, comprising:

a doped region on the solar cell, wherein the doped region is located at a back surface of the solar cell;

a dielectric layer directly on the doped region, the dielectric layer having a partially removed region therein, wherein the partially removed region is in contact with the doped region, wherein the partially removed region comprises material of the dielectric layer; and

a plurality of metal layers directly on the dielectric layer, each of the plurality of metal layers physically separated from one another, wherein one of the plurality of metal layers is in contact with the material of the dielectric layer of the partially removed region of the dielectric layer, and wherein the material of the dielectric layer of the partially removed region of the dielectric layer is vertically between and physically contacts both the one of the plurality of metal layers and the doped region.

10. The solar cell of claim 9 , wherein the doped region is an N-type doped region or a P-type doped region.

11. The solar cell of claim 9 , wherein the partially removed region provides an ohmic contact between the one of the plurality of metal layers and the doped region.

12. The solar cell of claim 9 , wherein the partially removed region mechanically couples the one of the plurality of metal layers and the doped region.

13. The solar cell of claim 9 , wherein the plurality of metal layers comprises a metal foil.

14. The solar cell of claim 9 , wherein the plurality of metal layers is selected from a group consisting of copper, tin, aluminum, silver, gold, chromium, iron, nickel, zinc, ruthenium, palladium and platinum.

15. The solar cell of claim 9 , wherein the dielectric layer comprises a material selected from a group consisting of silicon nitride, silicon oxide, silicon oxynitride, aluminum oxide, amorphous silicon and polysilicon.

16. A solar cell, comprising:

a silicon substrate having a back surface opposite a light-receiving surface;

a N-type doped region and a P-type doped region on the silicon substrate, wherein the N-type doped region and the P-type doped region are located at the back surface of the silicon substrate;

a dielectric layer directly on the N-type doped region and the P-type doped region, the dielectric layer having a dissociated region therein, wherein the dissociated region is in contact with the N-type doped region and the P-type doped region, wherein the dissociated region comprises dissociated material of the dielectric layer; and

a plurality of metal layers directly on the dielectric layer, each of the plurality of metal layers physically separated from one another, wherein one of the plurality of metal layers is in contact with the dissociated material of the dissociated region of the dielectric layer, and wherein the dissociated material of the dissociated region of the dielectric layer is vertically between and physically contacts both the one of the plurality of metal layers and one of the P-type doped region or the N-type doped region.

17. The solar cell of claim 16 , wherein the dissociated region provides an ohmic contact between the one of the plurality of metal layers and the N-type doped region or P-type doped region.

18. The solar cell of claim 16 , wherein the dielectric layer comprises a material selected from a group consisting of silicon nitride, silicon oxide, silicon oxynitride, aluminum oxide, amorphous silicon and polysilicon.

19. The solar cell of claim 16 , wherein the plurality of metal layers comprises a metal foil.

20. The solar cell of claim 16 , wherein the plurality of metal layers is selected from a group consisting of copper, tin, aluminum, silver, gold, chromium, iron, nickel, zinc, ruthenium, palladium and platinum.

Assignments (5)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 8, 2025
From: TOTALENERGIES SE; TOTALENERGIES SOLAR INTL
To: MAXEON SOLAR PTE. LTD.
Reel/Frame 073059/0081 →
SECURITY INTEREST Recorded Jun 27, 2024
From: MAXEON SOLAR PTE. LTD.
To: DB TRUSTEES (HONG KONG) LIMITED
Reel/Frame 067924/0062 →
SECOND LIEN SECURITY INTEREST AGREEMENT Recorded Jun 26, 2024
From: MAXEON SOLAR PTE. LTD
To: DB TRUSTEES (HONG KONG) LIMITED
Reel/Frame 071343/0553 →
SECURITY INTEREST Recorded Jun 5, 2024
From: MAXEON SOLAR PTE. LTD.
To: DB TRUSTEES (HONG KONG) LIMITED
Reel/Frame 067637/0598 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 24, 2023
From: SUNPOWER CORPORATION
To: MAXEON SOLAR PTE. LTD.
Reel/Frame 062699/0875 →
Cited By (1)
US 12,230,727