In-memory processing based on combining output currents

1. A system, comprising:

a first memory cell configured to store a first value;

a first electronic component configured to provide a first component output current based on the stored first value, wherein the first component output current is proportional to a place value represented by the first value;

a second memory cell configured to store a second value;

a second electronic component configured to provide a second component output current based on the stored second value, wherein the second component output current is proportional to a place value represented by the second value; and

a detector configured to detect a combined current of at least the first component output current and the second component output current, wherein the combined current corresponds to a sum of at least the first value and the second value; and

wherein at least one of the first memory cell or the second memory cell includes a transistor and a capacitor.

2. The system of claim 1 , wherein at least one of the first memory cell or the second memory cell is a dynamic random-access memory (DRAM) cell.

3. The system of claim 1 , wherein at least one of the first memory cell or the second memory cell includes at least three transistors and a capacitor.

4. The system of claim 1 , wherein at least one of the first electronic component or the second electronic component is a transistor.

5. The system of claim 1 , wherein at least one of the first component output current or the second component output current is a negative-channel metal oxide semiconductor (NMOS) saturation current or a positive-channel metal oxide semiconductor (PMOS) saturation current.

6. The system of claim 1 , wherein the first electronic component and the second electronic component are transistors having different dimensions.

7. The system of claim 1 , wherein the first electronic component and the second electronic component are members of a set of different electronic component types included in the system, wherein each electronic component type of the set of different electronic component types is associated with a corresponding different place value.

8. The system of claim 1 , wherein the detector is further configured to compare the sum of at least the first value and the second value to a specified threshold value.

9. The system of claim 1 , wherein the detector is further configured to determine a digital approximation to the sum of at least the first value and the second value.

10. The system of claim 1 , wherein the detector includes a resistor through which the combined current flows.

11. The system of claim 10 , wherein the detector includes a comparator.

12. The system of claim 10 , wherein the detector includes a comparator, a successive approximation register, and a digital to analog converter.

13. The system of claim 1 , wherein the combined current includes contributions from a plurality of groups of component output currents, wherein each group of component output currents is associated with at least a byte of information.

14. The system of claim 1 , wherein the first memory cell and the second memory cell are located in a same row or column of a memory array.

15. The system of claim 1 , wherein the first memory cell and the second memory cell are located in one of a plurality of sub-modules of a memory array, wherein outputs of the plurality of sub-modules are processed in parallel.

16. The system of claim 1 , wherein the first memory cell and the second memory cell are located in a memory array in which each memory cell of the memory array is individually addressable.

17. The system of claim 1 , wherein the first value and the second value are associated with a vector computation of a sparse neural network.

18. The system of claim 1 , wherein the first memory cell and the second memory cell are located in a memory array that is a part of a memory array system that includes an address buffer, a row decoder, and a column decoder.

19. A method, comprising:

storing a first value in a first memory cell;

providing a first component output current, from a first electronic component, based on the stored first value, wherein the first component output current is proportional to a place value represented by the first value;

storing a second value in a second memory cell;

providing a second component output current, from a second electronic component, based on the stored second value, wherein the second component output current is proportional to a place value represented by the second value; and

detecting a combined current of at least the first component output current and the second component output current, wherein the combined current corresponds to a sum of at least the first value and the second value; and

wherein at least one of the first memory cell or the second memory cell includes a transistor and a capacitor.

20. A system, comprising:

a first memory cell configured to store a first value;

a first electronic component configured to provide a first component output current based on the stored first value, wherein the first component output current is proportional to a place value represented by the first value;

a second memory cell configured to store a second value;

a second electronic component configured to provide a second component output current based on the stored second value, wherein the second component output current is proportional to a place value represented by the second value; and

a detector configured to detect a combined current of at least the first component output current and the second component output current, wherein the combined current corresponds to a sum of at least the first value and the second value; and

wherein the detector includes a resistor through which the combined current flows.