Method and apparatus for embedding semiconductor devices

1. An apparatus, comprising:

a product substrate including a transfer location on a transfer surface of the product substrate, at least a portion of an area surrounding the transfer location having ripples being formed, at least in part, by material that is displaced during transfer of a semiconductor die onto the product substrate, the ripples having a profile thereof, such that:

an apex on an individual ripple is a point on a first plane, and

a trough on the individual ripple is a point on a second plane that is substantially parallel with the first plane; and

the semiconductor die being an unpackaged LED and defined, at least in part, by:

a first surface forming a bottom of the semiconductor die, the first surface disposed at least partially in contact with the trough,

a second surface adjoined to the first surface forming a sidewall of the semiconductor die and extending in a direction transverse to the first surface, and

a third surface that is opposite the first surface and adjoined to the second surface, the third surface forming a top of the semiconductor die and the semiconductor die being disposed on the transfer surface between the first plane and the second plane such that the third surface is at or below the first plane.

2. The apparatus according to claim 1 , wherein the transfer surface of the product substrate includes a circuit trace and the semiconductor die is positioned on the circuit trace.

3. The apparatus according to claim 1 , wherein at least a portion of each of the first surface and the second surface is in contact with the transfer surface, respectively.

4. The apparatus according to claim 3 , wherein the second surface includes a pair of opposing surfaces at respective ends of the first surface of the semiconductor die, and

at least a portion of each of the opposing surfaces of the semiconductor die are in contact with the transfer surface.

5. The apparatus of claim 1 , wherein at least a portion of the material covers at least a portion of the third surface.

6. A method for transferring a semiconductor die, comprising:

providing a semiconductor die having at least a first surface forming a bottom of the semiconductor die, a second surface, the second surface adjoined to the first surface forming a sidewall of the semiconductor die and extending in a direction transverse to the first surface, and a third surface opposite the first surface and adjoined to the second surface, the third surface forming a top of the semiconductor die;

providing a product substrate including a transfer location on a transfer surface of the product substrate, the transfer location including at least one depression;

positioning the semiconductor die to be transferred with the transfer location on the transfer surface of the product substrate; and

transferring the semiconductor die onto the transfer location on the transfer surface of the product substrate, wherein transferring the semiconductor die includes aligning the semiconductor die within the at least one depression, and the transferring:

displacing at least a portion of material of the product substrate, at least partially during the transferring, so as to create a ripple around the semiconductor die, the ripple including an apex and a trough,

wherein:

the apex is a point on the ripple on a first plane, and

the trough is a point on the ripple on a second plane that is substantially parallel with the first plane, and

causing the first surface to be disposed at least partially in contact with the trough and the third surface to be disposed at or below the first plane.

7. The method of claim 6 , wherein the transferring causes at least a portion of each of the first surface and the second surface to be in contact with the transfer surface, respectively.

8. The method of claim 6 , further comprising, applying a conductive trace to the transfer surface, and

wherein the transferring positions the semiconductor die on the conductive trace.

9. The method of claim 6 , wherein the transferring causes at least a portion of the material to be displaced a lateral distance away from the semiconductor die.

10. The method of claim 7 ,

wherein the transferring causes at least a portion of the third surface to be in contact with a respective portion of the transfer surface.

11. The method of claim 7 , further comprising, fusing at least a portion of the first surface or second surface to the transfer surface.

12. The method of claim 7 , wherein the transferring transfers more than one semiconductor die, and

wherein at least a portion of each of the first and the second surface of a respective semiconductor die is in contact with the transfer surface of the product substrate.

13. The method of claim 6 , wherein the semiconductor die is disposed, at least partially, between the apex and the trough.

14. An apparatus having a semiconductor die thereon, the apparatus formed by a method comprising:

positioning the semiconductor die to be transferred onto a product substrate including a transfer location on a transfer surface, the semiconductor die being an unpackaged LED and including at least:

a first surface forming a bottom of the semiconductor die,

a second surface extending in a direction transverse to the first surface, the second surface forming a sidewall of the semiconductor die, and

a third surface that is opposite the first surface and adjoined to the second surface, the third surface forming a top of the semiconductor die; and

transferring the semiconductor die onto the transfer location on the transfer surface of the product substrate, wherein the transferring:

displaces at least a portion of material of the product substrate creating a ripple on the product substrate wherein the ripple includes an apex forming a top point of the ripple and a trough defining a bottom point of the ripple, and

disposes the first surface at least partially in contact with the trough and the third surface at or below the apex of the ripple.

15. The apparatus according to claim 14 , wherein the ripple forms a barrier projection around the semiconductor die.

16. The apparatus according to claim 14 , wherein the method further comprises applying a conductive trace onto the transfer surface, and

wherein the semiconductor die is transferred onto the conductive trace.

17. The apparatus according to claim 14 , wherein the transferring fuses at least a portion of the first surface or the second surface to the transfer surface.

18. The apparatus according to claim 14 , wherein the transferring results in an entirety of the semiconductor die being disposed below the apex of the ripple.